2SC3356K R25

  NPN N SILICON N RF TRA ANSISTOR 3 ·U Ultra high freequency low w noise transsistor ·Silicon epitaxxial bipolar process. p High power gain, g low nooise figure, ·H ·hiigh dynamicc range and ideal currennt characterisstics, ·SC-59 chip package, p maiinly used in VHF, UHF and CATV a ·hiigh frequenccy widebandd low noise amplifier. 2 1 SC C-59 Feaature Highh gain:︱S211e︱2 TYP. Value is 11ddB Low w noise: NF TYP.. Value is 1.55dB fT (T TYP.) : TYP P. Value is 7G GHz 1：Baase 2：Em mitter 3：C Collector @ VCE=10V，IC=20mA，f=1GHz @ VCE=10V，IC=7mA， f=1GHz @ VCE=10V，IC=20mA，f=1GHz ℃ Unless Otherw wise noted Abssolute Maximum Ratiings TA=25℃ PAR RAMETER Colllector-base breakdown b vooltage Colllector-emitteer breakdownn voltage Emiitter-base breeakdown volttage Colllector currennt Colllector Powerr Dissipation Juncction Temperrature Storrage Temperaature SYMBLE E MAXIM MUM VALUE U UNIT VCBO VCEO VEBO IC PD Tj Tstg 20 12 3 100 200 150 -65 ~ +150 ℃ V V V m mA m mW ℃ Tstg hFE E Classificaation (@VC CE=10V,IC C=20mA) B C Claassification M Marking R R24 hFE 90--140 130-1180 D R25 170-250   1 of 3    ELE ECTRICAL CHARACTERISTICS (T ( a=25℃ unlless otherwisse specified) PARA AMETER SY YMBLE M MIN. Colllector-base breakdown b v voltage VCBO ICBO IEBO fT 20 Collector cut-off c currennt Emitter cuut-off currennt Transit frequency TYP. 0.1 0.1 5 7 0.65 Pow wer gain Cre | S21e |2 Noisse factor NF 1.5 Output feeddback capacittor MAX. 11 U UNIT TEST CO ONDITION V IC=1 1.0μA VCB B=10V VEB B=1V VCE=10V V,IC=20mA VC CB=10V,IE= =0mA,f=1M MHz VCE=10V,IC=20mA,f=1G = GHz VCE=10V,IC=7mA,f=1G = GHz μA μA GHz pF dB dB   PAC CKAGE：SC C-59 1:（ （Base） 2:（Emitter） 3:（Colllector）   2 of 3    Tyypical characcteristic curv ves (TA =25℃)                     3 of 3