0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
KIA2300

KIA2300

  • 厂商:

    KIA(可易亚)

  • 封装:

    SOT23-3

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
KIA2300 数据手册
KIA MOSFET TRANSISTORS 2300 SEMICONDUCTORS 1. Features  V DS =20V,R DS(ON) =30mΩ@ V GS =10V,I D =6.0A  V DS =20V,R DS(ON) =40mΩ@ V GS =4.5V,I D =3.0A  V DS =20V,R DS(ON) =55mΩ@ V GS =2.5V,I D =2.0A 2. Pin information D G Pin Function 1 Gate 2 Source 3 Drain S 3. Maximum ratings (Ta=25°C) Characteristic Drain-source voltage Gate-source voltage Drain current-continuous*T J =125℃ pulsed Peak drain current Power dissipation* Thermal resistance,junction-ambient Operating junction and storage temperature range *Surface Mounted on FR 4 Board,t≤10 sec. 1 of 5 Symbol V DS V GS ID I DM Rating 20 ±10 6.0 20 Unit V V A A PD 1.25 W R thJA 100 °C /W T j ,T stg -55~150 °C KIA MOSFET TRANSISTORS 2300 SEMICONDUCTORS 6. Electrical characteristics (unless otherwise noted,Ta=25°C) Characteristic Symbol Test condition Min Typ Max Unit Drain-source breakdown voltage V DSS V GS =0V, I D =250µA 20 - - V Zero gate voltage drain current I DSS V DS =16V, V GS =0V - - 1.0 µA Gate-body leakage I GSS V GS =±10V, V GS =0V - - ±100 nA V GS(th) V DS = V GS ,I D =250µA 0.5 0.78 1.0 V 28 30 38 40 52 55 Gate threshold voltage* V GS =10V, I D =6.0A Drain-source on-state resistance* R DS(on) V GS =2.5V, I D =3.0A - V GS =1.8V, I D =2.0A On-state drain current* mΩ I D(on) V DS =5V,V GS =4.5V 5 - - A Forward transconductance* g fs V DS =15V DS(on) ,I D =5A 30 - - S Input capacitance C iss - 888 - Output capacitance C oss - 144 - Reverse transfer capacitance C rss - 115 - Total gate charge Qg 16.8 - Gate-source charge Q gs 2.5 - Gate-drain charge Q gd 5.4 - Turn-on delay time t d(on) - 31.8 - Rise time Turn-off delay time Fall time Drain-source diode forward current* Diode forward voltage V DS =15V, V GS =0V,f=1MHz V DS =10V, I D =3.5A, V GS =4.5V pF nC tr V DD =10V,I D =1A,R G =6Ω, - 14.5 - t d(off) R L =10Ω - 50.3 - tf - 31.9 - IS - - 1.25 A - 0.825 1.3 V V SD V GS =0V, I S =1.25A 2 of 5 ns KIA MOSFET TRANSISTORS 2300 SEMICONDUCTORS 7. Package outline 3 of 5 KIA MOSFET TRANSISTORS 2300 SEMICONDUCTORS 4 of 5 KIA MOSFET TRANSISTORS 2300 SEMICONDUCTORS 5 of 5
KIA2300
物料型号为KIA 2300,是一款MOSFET晶体管。

器件简介包括其在不同V_GS和I_D条件下的R_D_S(ON)值。

引脚分配为:1号引脚为栅极(Gate),2号引脚为源极(Source),3号引脚为漏极(Drain)。

参数特性包括最大漏源电压(VDs)、最大栅源电压(VGs)、连续漏电流(ID)、峰值漏电流(IDM)、功率耗散(PD)和热阻(RthJA)。

功能详解涉及电气特性,如漏源击穿电压、栅体漏电流、阈值电压、导通电阻等。

应用信息未在文档中明确说明,但通常这类MOSFET用于开关、放大和稳压等应用。

封装信息为SOT23。
KIA2300 价格&库存

很抱歉,暂时无法提供与“KIA2300”相匹配的价格&库存,您可以联系我们找货

免费人工找货
KIA2300
  •  国内价格
  • 10+0.30554
  • 100+0.22684
  • 300+0.17917
  • 3000+0.16210
  • 6000+0.14846
  • 9000+0.14164

库存:1931