P4SMA27CA R3G

P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor 400W, 6.8V - 200V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated chip junction Excellent clamping capability Fast response time: Typically less than 1.0ps Typical IR less than 1μA above 10V Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5.5 - 171 V VBR PPPM tp = 10/1000μs waveform TJ MAX 6.12 - 210 V 400 W 150 °C Package DO-214AC (SMA) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Peak power dissipation at TA = 25°C, tp = 1ms (Note 1) Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 25A for unidirectional only Operating junction temperature range SYMBOL VALUE UNIT PPK 400 W IFSM 40 A VF 3.5 V TJ -55 to +150 °C -55 to +150 °C Storage temperature range TSTG Notes: 1. Non-repetitive current pulse per Fig.5 and derated above TA = 25°C per Fig.2 Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P4SMA6.8 - types P4SMA200A 2. Electrical characteristics apply in both directions 1 Version: S2102 P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Breakdown voltage Part number Marking code VBR@IT(1) (V) P4SMA6.8 P4SMA6.8A P4SMA7.5 P4SMA7.5A P4SMA8.2 P4SMA8.2A P4SMA9.1 P4SMA9.1A P4SMA10 P4SMA10A P4SMA11 P4SMA11A P4SMA12 P4SMA12A P4SMA13 P4SMA13A P4SMA15 P4SMA15A P4SMA16 P4SMA16A P4SMA18 P4SMA18A P4SMA20 P4SMA20A P4SMA22 P4SMA22A P4SMA24 P4SMA24A P4SMA27 P4SMA27A P4SMA30 P4SMA30A P4SMA33 P4SMA33A P4SMA36 P4SMA36A P4SMA39 P4SMA39A P4SMA43 P4SMA43A P4SMA47 P4SMA47A P4SMA51 P4SMA51A P4SMA56 P4SMA56A P4SMA62 P4SMA62A ADJ AEJ AFJ AGJ AHJ AKJ ALJ AMJ ANJ APJ AQJ ARJ ASJ ATJ AUJ AVJ AWJ AXJ AYJ AZJ BDJ BEJ BFJ BGJ BHJ BKJ BLJ BMJ BNJ BPJ BQJ BRJ BSJ BTJ BUJ BVJ BWJ BXJ BYJ BZJ CDJ CEJ CFJ CGJ CHJ CKJ CLJ CMJ Working Test stand-off current voltage IT (mA) Min Max 6.12 6.46 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.50 10.80 11.40 11.70 12.40 13.50 14.30 14.40 15.20 16.20 17.10 18.00 19.00 19.80 20.90 21.60 22.80 24.30 25.70 27.00 28.50 29.70 31.40 32.40 34.20 35.10 37.10 38.70 40.90 42.30 44.70 45.90 48.50 50.40 53.20 55.8 58.9 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.50 12.10 11.60 13.20 12.60 14.30 13.70 16.50 15.80 17.60 16.80 19.80 18.90 22.00 21.00 24.20 23.10 26.40 25.20 29.70 28.40 33.00 31.50 36.30 34.70 39.60 37.80 42.90 41.00 47.30 45.20 51.70 49.40 56.10 53.60 61.60 58.80 68.2 65.1 Maximum reverse VWM Maximum Maximum peak clamping leakage current impulse current IR@VWM(1) IPPM (A) (µA) tp =10/1000 μs 1000 1000 500 500 200 200 50 50 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 38.0 40.0 35.0 37.0 33.0 34.0 30.0 31.0 28.0 29.0 26.0 27.0 24.0 25.0 22.0 23.0 19.0 20.0 17.8 18.6 16.0 16.5 14.0 15.0 13.0 13.7 12.0 12.6 10.7 11.0 9.6 10.0 8.8 9.0 8.0 8.4 7.4 7.7 6.7 7.0 6.2 6.4 5.7 6.0 5.2 5.4 4.7 5.0 voltage (V) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 2 VC@IPPM (V) tp =10/1000 μs 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 Maximum Temperature Coefficient of VBR (%/°C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.078 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 Version: S2102 P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Working Breakdown voltage Part number Marking code VBR@IT(1) Test stand-off current (V) Min Maximum reverse voltage IT (mA) Max VWM Maximum Maximum peak clamping leakage current impulse current IR@VWM(1) IPPM (A) (µA) tp =10/1000 μs voltage (V) P4SMA68 CNJ 61.2 74.8 1.0 55.1 1 4.2 P4SMA68A CPJ 64.6 71.4 1.0 58.1 1 4.5 P4SMA75 CQJ 67.5 82.5 1.0 60.7 1 3.8 P4SMA75A CRJ 71.3 78.8 1.0 64.1 1 4.0 P4SMA82 CSJ 73.8 90.2 1.0 66.4 1 3.5 P4SMA82A CTJ 77.9 86.1 1.0 70.1 1 3.7 P4SMA91 CUJ 81.9 100 1.0 73.7 1 3.2 P4SMA91A CVJ 86.5 95.5 1.0 77.8 1 3.3 P4SMA100 CWJ 90 110 1.0 81.0 1 2.9 P4SMA100A CXJ 95 105 1.0 85.5 1 3.0 P4SMA110 CYJ 99 121 1.0 89.2 1 2.6 P4SMA110A CZJ 105 116 1.0 94.0 1 2.7 P4SMA120 RDJ 108 132 1.0 97.2 1 2.4 P4SMA120A REJ 114 126 1.0 102 1 2.5 P4SMA130 RFJ 117 143 1.0 105 1 2.2 P4SMA130A RGJ 124 137 1.0 111 1 2.3 P4SMA150 RHJ 135 165 1.0 121 1 1.9 P4SMA150A RKJ 143 158 1.0 128 1 2.0 P4SMA160 RLJ 144 176 1.0 130 1 1.8 P4SMA160A RMJ 152 168 1.0 136 1 1.9 P4SMA170 RNJ 153 187 1.0 138 1 1.7 P4SMA170A RPJ 162 179 1.0 145 1 1.8 P4SMA180 RQJ 162 198 1.0 146 1 1.6 P4SMA180A RRJ 171 189 1.0 154 1 1.7 P4SMA200 RSJ 180 220 1.0 162 1 1.4 P4SMA200A RTJ 190 210 1.0 171 1 1.51 Notes: 1. VBR measure after IT applied for 300μs, IT = square wave pulse or equivalent. 2. Surge current waveform per Figure.5 and derate per Figure.2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. Maximum Temperature Coefficient of VBR VC@IPPM (V) tp =10/1000 μs 98.0 92.0 108 103 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 (%/°C) 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING P4SMAx DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 6.8V(P4SMA6.8) to 200V(P4SMA200A) 3 Version: S2102 P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve PEAK PULSE POWER(PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER (KW) 100 Non-repetitive pulse waveform shown in fig.5 10 1 125 100 75 50 25 0 0.1 0.1 1 10 100 tp, PULSE WIDTH (μs) 1000 0 10000 IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) VR=0 1000 Measured at stand-off voltage, Vwm f=1.0MHz Vsig=50mVp-p 10 1 75 100 125 150 Fig.4 Maximum Non-repetitive Forward Surge Current 100000 100 50 TA, AMBIENT TEMPERATURE (°C) Fig.3 Typical Junction Capacitance 10000 25 10 100 50 8.3ms single half sine wave 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz V(BR), BREAKDOWN VOLTAGE (V) 4 Version: S2102 P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor CHARACTERISTICS CURVES Fig.5 Clamping Power Pulse Waveform 120 IPPM, PEAK PULSE CURRENT (%) 110 Peak value IPPM 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 90 Rise time tr=10μs to 100% of IPPM 80 70 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 50 40 30 20 td 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t, TIME (ms) 5 Version: S2102 P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 6 Version: S2102 P4SMA6.8(A) – P4SMA200(A) Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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