SS510BF

山东晶导微电子有限公司 SS52BF THRU SS520BF Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: S52B — S520B Simplified outline SMBF and symbol MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57 mg / 0.002oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.55 0.85 1.0 50 IR Cj 0.70 mA 500 800 V pF RθJA 45 °C/W Tj -55 ~ +150 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMBF-S-SS52BF~SS520BF-5A200V Page 1 of 3 山东晶导微电子有限公司 SS52BF THRU SS520BF Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Case Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C 10 1 SS52BF/SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 0 0.5 1.0 1.5 500 100 SS52BF/SS54BF SS54F/SS520F SS56BF-SS520BF 20 10 0.1 1 10 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 1000 2.0 175 25 Junction Capacitance ( pF) 20 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 100 10 Number of Cycles at 60Hz 2016.01 T J =75°C 10 2 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS52BF THRU SS520BF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View g A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm g pad e E A pad HE 1.0 9° 40 Marking The recommended mounting pad size Type number 3.0(118) 1.8(71) 2.54(100) 1.8(71) Unit：mm(mil) 2016.01 ∠ XTH601156B0 Marking code SS52BF S52B SS54BF S54B SS56BF S56B SS58BF S58B SS510BF S510B SS512BF S512B SS515BF S515B SS520BF S520B Page 3 of 3