SS16M RSG

SS13M – SS16M Taiwan Semiconductor 1A, 30V - 60V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Very low profile - typical height of 0.68mm Low power loss, high efficiency Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter PARAMETER VALUE UNIT IF 1 A VRRM 30 - 60 V IFSM 25 A TJ MAX 150 °C Package Micro SMA Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.006g (approximately) Micro SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device SS13M SS14M SS16M A B C UNIT Repetitive peak reverse voltage VRRM 30 40 60 V Reverse voltage, total rms value VR(RMS) 21 28 42 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature IF 1 A IFSM 25 A TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: O2103 SS13M – SS16M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 30 °C/W Junction-to-ambient thermal resistance RӨJA 125 °C/W Junction-to-case thermal resistance RӨJC 40 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.45 - V 0.52 0.55 V 0.35 - V IF = 1.0A,TJ = 125°C 0.46 0.50 V IF = 0.5A,TJ = 25°C 0.51 - V 0.64 0.68 V 0.46 - V 0.57 0.60 V - 50 µA - 10 mA 50 - pF 40 - pF IF = 0.5A,TJ = 25°C Forward voltage SS13M IF = 1.0A,TJ = 25°C SS14M IF = 0.5A,TJ = 125°C (1) SS16M IF = 1.0A,TJ = 25°C IF = 0.5A,TJ = 125°C VF VF IF = 1.0A,TJ = 125°C Reverse current @ rated VR TJ = 25°C (2) IR TJ = 125°C SS13M Junction capacitance SS14M 1MHz, VR = 4.0V SS16M CJ Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SS1xM Micro SMA 12,000 / Tape & Reel Notes: 1. “x” defines voltage from 30V(SS13M) to 60V(SS16M) 2 Version: O2103 SS13M – SS16M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 CAPACITANCE (pF) 1 0 SS13M - SS14M 100 SS16M 10 f=1.0MHz Vsig=50mVp-p 1 50 75 100 125 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 SS13M - SS14M TJ=150°C 1 TJ=125°C 0.1 0.01 TJ=25°C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 10 10 1 SS13M - SS14M UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.01 0.1 0.001 0.1 0.2 0.3 0.4 0.3 0.4 0.5 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) SS16M TJ=150°C 1 TJ=125°C 0.01 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 0.5 0.6 0.7 0.8 0.9 0.6 0.7 0.8 0.9 1.0 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.001 Pulse width 300μs 1% duty cycle Pulse width FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 0.1 TJ=25°C 1 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) 25 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 1 1 0.1 0.01 SS16M UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 2 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 FORWARD VOLTAGE (V) 3 Version: O2103 SS13M – SS16M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.7 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 30 8.3ms single half sine wave 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.8 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 1000 SS16M 100 SS13M - SS14M 10 1 0.1 1 10 100 PULSE DURATION (s) 4 Version: O2103 SS13M – SS16M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Micro SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N YW 5 = Marking Code = Data Code Version: O2103 SS13M – SS16M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: O2103