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US3MBF

US3MBF

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SMBF

  • 描述:

    1000V,3A,VF=1.68V@3A

  • 数据手册
  • 价格&库存
US3MBF 数据手册
山东晶导微电子有限公司 US3ABF THRU US3MBF Jingdao Microelectronics Surface Mount Ultrafast Recovery Rectifier Reverse Voltage – 50V~1000 V PINNING Forward Current – 3.0 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • High efficiency • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: U3AB~U3MB Simplified outline SMBF symbol MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 5 7mg / 0.002oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols US3ABF US3BBF US3DBF US3GBF US3JBF US3KBF US3MBF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Parameter Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 80 A Maximum Instantaneous Forward Voltage at 3 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Maximum Reverse Recovery Time (1) Typical Thermal Resistance Operating and Storage Temperature Range 1.3 1.68 5 100 IR t rr (2) 1.0 μA 75 50 V ns RθJA RθJC 45 15 °C/W T j , T stg -55 ~ +150 °C (1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . (2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMBF-U-US3ABF~US3BMF-3A1KV Page 1 of 3 山东晶导微电子有限公司 US3ABF THRU US3MBF Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current(μ A) Average Forward Current (A) Fig.1 Maximum Average Forward Current Rating 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Case Temperature (°C) Peak Forward Surage Current (A) Instaneous Forward Current (A) T J =25°C 1.0 US3ABF~US3DBF US3GBF 0.1 US3JBF~US3MBF 0.01 0.001 0 0.5 1.0 1.5 60 80 100 120 140 2.0 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 2.5 1 10 100 Number of Cycles Instaneous Forward Voltage (V) 2016.01 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Fig.3 Typical Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) www.sdjingdao.com Page 2of 3 山东晶导微电子有限公司 US3ABF THRU US3MBF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View g A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm g pad e E A pad HE 1.0 9° 40 Marking The recommended mounting pad size Type number 3.0(118) Unit:mm(mil) 2016.01 Marking code 1.8(71) 2.54(100) 1.8(71) ∠ JD512268B0 US3ABF U3AB US3BBF U3BB US3DBF U3DB US3GBF U3GB US3JBF U3JB US3KBF U3KB US3MBF U3MB Page 3 of 3
US3MBF 价格&库存

很抱歉,暂时无法提供与“US3MBF”相匹配的价格&库存,您可以联系我们找货

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US3MBF
    •  国内价格
    • 20+0.25467
    • 200+0.19872
    • 600+0.16773

    库存:2845

    US3MBF
    •  国内价格
    • 20+0.24200
    • 100+0.20900
    • 300+0.17600
    • 1000+0.13200
    • 5000+0.11000
    • 25000+0.10450

    库存:14596

    US3MBF
      •  国内价格
      • 5000+0.12515

      库存:15000