山东晶导微电子有限公司
US3ABF THRU US3MBF
Jingdao Microelectronics
Surface Mount Ultrafast Recovery Rectifier
Reverse Voltage – 50V~1000 V
PINNING
Forward Current – 3.0 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• High efficiency
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: U3AB~U3MB
Simplified outline SMBF symbol
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 5 7mg / 0.002oz
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
US3ABF
US3BBF
US3DBF
US3GBF
US3JBF
US3KBF
US3MBF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Parameter
Maximum Average Forward Rectified Current
at T c = 125 °C
I F(AV)
3
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
80
A
Maximum Instantaneous Forward Voltage at 3 A
VF
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Maximum Reverse Recovery Time (1)
Typical Thermal Resistance
Operating and Storage Temperature Range
1.3
1.68
5
100
IR
t rr
(2)
1.0
μA
75
50
V
ns
RθJA
RθJC
45
15
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SMBF-U-US3ABF~US3BMF-3A1KV
Page 1 of 3
山东晶导微电子有限公司
US3ABF THRU US3MBF
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Forward Current (A)
Fig.1 Maximum Average Forward Current Rating
100
T J =125°C
10
1.0
T J =25°C
0.1
00
Case Temperature (°C)
Peak Forward Surage Current (A)
Instaneous Forward Current (A)
T J =25°C
1.0
US3ABF~US3DBF
US3GBF
0.1
US3JBF~US3MBF
0.01
0.001
0
0.5
1.0
1.5
60
80
100
120
140
2.0
120
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
2.5
1
10
100
Number of Cycles
Instaneous Forward Voltage (V)
2016.01
40
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.3 Typical Forward Characteristics
10
20
percent of Rated Peak Reverse Voltage (%)
www.sdjingdao.com
Page 2of 3
山东晶导微电子有限公司
US3ABF THRU US3MBF
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMBF
∠ALL ROUND
C
A
∠ALL ROUND
D
E
A
V M
g
Top View
mil
Bottom View
g
A
C
D
E
HE
e
max
1.3
0.26
4.4
3.7
5.5
2.2
min
1.1
0.18
4.2
3.5
5.1
1.9
max
51
10
173
146
216
86
min
43
7
165
138
200
75
UNIT
mm
g
pad
e
E
A
pad
HE
1.0
9°
40
Marking
The recommended mounting pad size
Type number
3.0(118)
Unit:mm(mil)
2016.01
Marking code
1.8(71)
2.54(100)
1.8(71)
∠
JD512268B0
US3ABF
U3AB
US3BBF
U3BB
US3DBF
U3DB
US3GBF
U3GB
US3JBF
U3JB
US3KBF
U3KB
US3MBF
U3MB
Page 3 of 3
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