BT139B-800
4Q Triac
6 July 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic package
intended for use in applications requiring high bidirectional transient and blocking voltage capability
and high thermal cycling performance. Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
High noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current
ITSM
Tj
Conditions
Min
Typ
Max
Unit
-
-
800
V
-
-
16
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
state current
-
-
155
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
-
170
A
-
-
125
°C
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
5
35
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
8
35
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
10
35
mA
full sine wave; Tmb ≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3
junction temperature
Static characteristics
IGT
gate trigger current
BT139B-800
WeEn Semiconductors
4Q Triac
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
-
22
70
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
6
45
mA
VT
on-state voltage
IT = 20 A; Tj = 25 °C; Fig. 10
-
1.2
1.6
V
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200
250
-
V/µs
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 95 °C; dIcom/dt = 7.2 A/
ms; IT = 16 A; gate open circuit
10
20
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main
terminal 2
Graphic symbol
mb
T2
sym051
T1
G
2
1
3
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
BT139B-800
BT139B-800
Product data sheet
Package
Name
Description
Version
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
SOT404
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BT139B-800
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4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak onstate current
2
Conditions
2
Min
Max
Unit
-
800
V
full sine wave; Tmb ≤ 99 °C; Fig. 1; Fig. 2;
Fig. 3
-
16
A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
-
155
A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
170
A
I t
I t for fusing
tp = 10 ms; SIN
-
120
A²s
dIT/dt
rate of rise of on-state
current
IG = 150 mA
-
50
A/µs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
over any 20 ms period
001aab090
50
IT(RMS)
(A)
40
001aab091
20
IT(RMS)
(A)
(1)
15
30
10
20
5
10
0
10-2
10-1
0
- 50
1
10
surge duration (s)
f = 50 Hz; Tmb = 99 °C
Product data sheet
50
100
Tmb (°C)
150
(1) Tmb = 99 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
BT139B-800
0
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
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BT139B-800
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4Q Triac
001aab093
25
Ptot
(W)
20
conduction
angle, α
(degrees)
form
factor
a
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
15
α = 180 °
α
95
Tmb(max)
(°C)
101
120
90
α
107
60
30
10
113
5
119
0
0
5
10
15
IT(RMS) (A)
125
20
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values.
001aab102
160
ITSM
(A)
120
80
IT
40
0
ITSM
t
1/f
Tj(init) = 25 °C max
1
102
10
number of cycles
103
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
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Product data sheet
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BT139B-800
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001aab092
103
ITSM
(A)
102
(1)
ITSM
IT
t
(2)
tp
10
10-2
Tj(init) = 25 °C max
10-1
1
10
Tp (ms)
102
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139B-800
Product data sheet
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8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
half cycle; Fig. 6
-
-
1.7
K/W
full cycle; Fig. 6
-
-
1.2
K/W
thermal resistance
from junction to
ambient free air
minimum footprint; FR4 board
-
55
-
K/W
Rth(j-a)
001aab098
10
Zth(j-mb)
(K/W)
(1)
1
(2)
10- 1
PD
10- 2
t
tp
10- 3
10- 5
10- 4
10- 3
10- 2
10- 1
1
tp (s)
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT139B-800
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9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
5
35
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
8
35
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
-
10
35
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
-
22
70
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
-
7
40
mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
-
20
60
mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
-
6
40
mA
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
-
10
60
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
6
45
mA
VT
on-state voltage
IT = 20 A; Tj = 25 °C; Fig. 10
-
1.2
1.6
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
-
0.7
1
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25
0.4
-
V
VD = 800 V; Tj = 125 °C
-
0.1
0.5
mA
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200
250
-
V/µs
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 95 °C; dIcom/dt = 7.2 A/
ms; IT = 16 A; gate open circuit
10
20
-
V/µs
BT139B-800
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BT139B-800
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001aab448
3
IGT (Tj)
IGT(25°C)
001aab100
3
IL
IL(25°C)
(1)
(2)
2
2
(3)
(4)
1
1
0
- 50
0
50
100
Tj (°C)
0
-50
150
(1) T2- G+
(2) T2+ G(3) T2- G(4) T2+ G+
0
50
100
Tj (°C)
150
Fig. 8. Normalized latching current as a function of
junction temperature
Fig. 7. Normalized gate trigger current as a function of
junction temperature
001aab099
3
001aab094
50
IT
(A)
IH
IH(25°C)
(1)
(2)
(3)
40
2
30
20
1
10
0
-50
0
50
100
Tj (°C)
0
150
0
1
2
VT (V)
3
Vo = 1.195 V; Rs = 0.018 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
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Product data sheet
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001aab101
1.6
VGT
VGT(25°C)
1.2
0.8
0.4
-50
0
50
100
Tj (°C)
150
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
BT139B-800
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10. Package outline
Fig. 12. Package outline D2PAK (SOT404)
BT139B-800
Product data sheet
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Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11. Legal information
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Definitions
Draft — The document is a draft version only. The content is still under
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
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data sheet shall define the specification of the product as agreed between
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Product data sheet.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
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Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
BT139B-800
Product data sheet
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without WeEn Semiconductors’ warranty
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Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
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12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics..............................................................7
10. Package outline........................................................ 10
11. Legal information..................................................... 11
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Date of release: 6 July 2018
BT139B-800
Product data sheet
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