MMBT3906W 3N

MMBT3906W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 3N Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 200 mA Total Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to +150 O Junction Temperature Storage Temperature Range Page 1 of 4 C C 10/28/2013 MMBT3906W Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 60 80 100 60 30 300 - - Collector Emitter Cutoff Current at -VCE = 30 V -ICES - 50 nA Emitter Base Cutoff Current at -VEB = 3 V -IEBO - 50 nA Collector Base Breakdown Voltage at -IC = 10 µA -V(BR)CBO 40 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 40 - V Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VCE(sat) - 0.25 0.4 V Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VBE(sat) 0.65 - 0.85 0.95 V fT 250 - MHz Cob - 4.5 pF Delay Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA td - 35 ns Rise Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA tr - 35 ns Storage Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA tstg - 225 ns Fall Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA tf - 75 ns DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA Transition Frequency at -VCE = 20 V, IE = 10 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 100 KHz Page 2 of 4 10/28/2013 MMBT3906W Page 3 of 4 10/28/2013 MMBT3906W Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature: Ta ( C) O Fig.10 Power Dissipation vs Ambient Temperature Page 4 of 4 10/28/2013