KND3706A

KIA 50A，60V N-CHANNEL MOSFET KNX3706A SEMICONDUCTORS 1.Features n RDS(ON),typ.=9mΩ@VGS=10V n 100% EAS guaranteed n Super low gate charge n Excellent Cdv/dt effect decline n Advanced high cell density trench technology 2.Description The KNX3706A is the high cell density trenched N-ch MOSFET ,which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The KNX3706A meet the RoHS and Green product requirement, 100% EAS guaranteed with full function reliability approved. 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 4 Drain 4.Absolute maximum ratings Parameter Symbol Rating TO-252 Drain-source voltage Gate-source voltage Continuous drain current VGS@-10V1 VDS VGS TC=25ºC TC=100ºC Pulsed drain current2 Single pulse avalanche energy3 Avalanche current Total power dissipation4 Tc=25ºC Junction and storage temperature range Thermal resistance-junction to ambient1 Thermal resistance-junction to case1 1 of 4 IDM EAS IAS 60 +20 50 30 100 72.2 38 PD TJ ,TSTG RθJA RθJC 52 80 -55 to150 62 2.4 1.56 ID Units TO-220 V V A A mJ A W ºC ºC/W ºC/W Rev 1.0 Dec. 2018 KIA 50A，60V N-CHANNEL MOSFET KNX3706A SEMICONDUCTORS 5.Ordering Information Part Number Package Brand KNP3706A TO-220 KIA KND3706A TO-252 KIA 6.Electrical characteristics (TJ=25°C,unless otherwise noted) Test Conditions Min Typ Max Units VGS=0V, ID=-250μA 60 V Parameter Drain-Source breakdown voltage Symbol BVDSS Static drain-source on- resistance2 RDS(on) VGS=10V,ID=15A - 9 12 mΩ Gate threshold voltage VGS(th) 2 - - 4 1 5 +100 V μA μA nA - 42 - S - 33 11 9.5 10.5 9.0 65 4.5 2180 255 170 - - 19 15 30 1.2 - Drain-Source Leakage Current IDSS Gate-source leakage current IGSS VDS=VGS, ID=250μA VDS=48V,VGS=0V ,TJ=25°C VDS=48V,VGS=0V ,TJ=25°C VGS=+20V,VDS=0V Forward transcend ductance gFS VDS=5V, ID=30A Total gate charge(4.5V) Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Diode characteristics Continuous source current1.5 Diode forward voltage2 Reverse recovery time Reverse recovery charge Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDD=30V, RG=3.3Ω, VGS=10V ID=15A IS VSD trr Qrr VG=VD=0V,Force current VGS=0V,IS=1A, TJ=25°C IF=15A,dl/dt=100A/us, TJ=25°C VDS=48V, VGS=10V ID =15A VGS=0V, VDS=15V F=1.0MHZ nC ns pF A V nS nC Note:1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≤300us,duty cycle ≤2%. 3. The EAS data shows Max.rating. The test condition is VDD=25V, VGS=10V, L=0.1mH.IAS=38A. 4. The power dissipation is limited by 150 ºC junction temperature. 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. 2 of 4 Rev 1.0 Dec. 2018 KIA 50A，60V N-CHANNEL MOSFET KNX3706A SEMICONDUCTORS 7. Test circuits and waveforms 3 of 4 Rev 1.0 Dec. 2018 KIA 50A，60V N-CHANNEL MOSFET KNX3706A SEMICONDUCTORS 4 of 4 Rev 1.0 Dec. 2018