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HER108G A0G

HER108G A0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    -

  • 描述:

  • 数据手册
  • 价格&库存
HER108G A0G 数据手册
HER101G – HER108G Taiwan Semiconductor 1A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction High current capability, Low VF High reliability High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: DO-204AL (DO-41) Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.330g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER HER 101G HER 101G HER 102G HER 102G HER 103G HER 103G HER 104G HER 104G HER 105G HER 105G HER 106G HER 106G HER 107G HER 107G VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V SYMBOL Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature HER UNIT 108G HER 108G IF 1 A IFSM 30 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: L2104 HER101G – HER108G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 60 °C/W Junction-to-case thermal resistance RӨJC 15 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS HER101G HER102G HER103G HER104G HER105G HER106G HER107G HER108G (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance Reverse recovery time IF = 1A, TJ = 25°C VF IR TJ = 125°C HER101G HER102G HER103G HER104G HER105G HER106G HER107G HER108G HER101G HER102G HER103G HER104G HER105G HER106G HER107G HER108G SYMBOL 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 5 µA - 150 µA 15 - pF 10 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HER1xG DO-204AL (DO-41) 5,000 / Tape & Reel HER1xG A0G DO-204AL (DO-41) 3,000 / Ammo box HER1xGH DO-204AL (DO-41) 5,000 / Tape & Reel HER1xGHA0G DO-204AL (DO-41) 3,000 / Ammo box Notes: 1. “x” defines voltage from 50V (HER101G) to 1000V (HER108G) 2. “H” means AEC-Q101 qualified 2 Version: L2104 HER101G – HER108G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) 1 0 25 50 75 100 125 HER101G-HER105G 10 HER106G-HER108G f=1.0MHz Vsig=50mVp-p 1 150 1 10 AMBIENT TEMPERATURE (°C) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=100°C 10 TJ=75°C 1 TJ=25°C 0.1 20 30 40 50 60 70 80 90 100 10 10 HER101G-HER104G UF1DLW HER105G 1 HER106G-HER108G TJ=125°C TJ=25°C 10.1 0.01 0.1 0.001 0.4 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.6 0.4 0.8 0.5 1.0 1.2 0.6 0.7 0.8 1.4 0.9 1.6 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 35 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.3 Typical Reverse Characteristics 10 100 REVERSE VOLTAGE (V) (A) AVERAGE FORWARD CURRENT (A) 2 30 8.3ms single half sine wave 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2104 1.2 HER101G – HER108G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2104 HER101G – HER108G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AL (DO-41) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: L2104 HER101G – HER108G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2104
HER108G A0G 价格&库存

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HER108G A0G
  •  国内价格 香港价格
  • 1+4.116501+0.52430
  • 10+2.8571010+0.36390
  • 100+1.24780100+0.15890
  • 1000+0.881601000+0.11230
  • 3000+0.697403000+0.08880
  • 9000+0.604109000+0.07690
  • 24000+0.5376024000+0.06850
  • 45000+0.4700045000+0.05990
  • 99000+0.4618099000+0.05880

库存:0

HER108G A0G
    •  国内价格
    • 10+0.56432

    库存:0