RB520S-30 RKG

RB520S-30 Taiwan Semiconductor 200mA, 30V Low VF SMD Schottky Barrier Diode FEATURES KEY PARAMETERS ● ● ● ● Low capacitance Low forward voltage drop Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 200 mA VRRM 30 V IFSM 1 A VF at IF=200mA 0.6 V TJ Max. 125 °C APPLICATIONS ● ● ● ● Adapters For switching power supply Low stored charge Inverter Package SOD-523F Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: SOD-523F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 1.68 ± 0.5 mg ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device SYMBOL RB520S-30 UNIT B Power dissipation PD 200 mW VRRM IF IFSM 30 200 1 V mA A Junction temperature range TJ -55 to +125 °C Storage temperature range TSTG -55 to +125 °C SYMBOL TYP UNIT RӨJA 500 °C/W Repetitive peak reverse voltage Forward current Non-repetitive peak forward surge current @ t = 8.3ms THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: C1804 RB520S-30 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode (1) IF = 200mA, TJ = 25°C IR = 500 μA Reverse breakdown voltage (2) Reverse current Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms VR=10V, TJ = 25°C SYMBOL MIN MAX UNIT VF - 0.6 V V(BR) 30 - V IR - 1 μA ORDERING INFORMATION PART NO. PACKAGE PACKING RB520S-30 RKG SOD-523F 3K / 7" Reel RB520S-30 RK SOD-523F 3K / 7" Reel RB520S-30 RSG SOD-523F 8K / 7" Reel RB520S-30 RS SOD-523F 8K / 7" Reel 2 Version: C1804 RB520S-30 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Total Capacitance Fig. 2 Forward Voltage VS. Ambient 30 10000 TA=25°C f=1MHz 1000 IF, Forward Current (mA) Capacitance (pF) 25 20 15 10 5 0 100 125°C 75oC 25oC -25oC 10 1 0.1 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 VF, Forward Voltage (mV) Reverse Voltage (V) Fig. 3 Reverse Current VS. Reverse Voltage 1.E+06 125°C Reverse Current (nA) 1.E+05 1.E+04 75°C 1.E+03 25°C 1.E+02 1.E+01 -25°C 1.E+00 0 10 20 30 40 50 Reverse Voltage (V) 3 Version: C1804 RB520S-30 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-523F Unit (mm) Unit (inch) DIM. Min Max Min Max A 0.70 0.90 0.028 0.035 B 1.50 1.70 0.059 0.067 C 0.25 0.40 0.010 0.016 D 1.10 1.30 0.043 0.051 E 0.50 0.77 0.020 0.030 F 0.07 0.20 0.003 0.008 SUGGEST PAD LAYOUT Unit (mm) Unit (inch) Typ. Typ. X 0.60 0.024 X1 2.30 0.091 Y 0.80 0.031 DIM. 4 Version: C1804 RB520S-30 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: C1804