BZW06-33B R0G

BZW06 SERIES Taiwan Semiconductor 600W, 12.8V - 376V Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● AEC-Q101 qualified available Excellent clamping capability Low dynamic impedance 600W surge capability at 10/1000μs waveform Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional ● Typical IR less than 1μA above 10V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 12.8 - 376 V VBR (uni - directional) 14.3 - 462 V VBR (bi - directional) 14.3 - 462 V PPK 600 W TJ MAX 175 °C Package DO-204AC (DO-15) APPLICATIONS ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-204AC (DO-15) Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.400g (approximately) DO-204AC (DO-15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPK 600 W PD 1.7 W IFSM 100 A TJ -55 to +175 °C TSTG -55 to +175 °C SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 60 °C/W Junction-to-ambient thermal resistance, L lead = 10mm RӨJA 100 °C/W (1) Peak power dissipation at TA = 25°C, Tp = 1ms Steady state power dissipation at T L = 75°C (2) lead lengths .375", 9.5mm Peak forward surge current, 8.3 ms single half sine-wave (3) superimposed on rated load Operating junction temperature range Storage temperature range Note: 1. Non-repetitive current pulse per Fig.3 THERMAL PERFORMANCE PARAMETER 1 Version: K2105 BZW06 SERIES Taiwan Semiconductor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Breakdown voltage VBR@IT (V)(1) Test current IT (mA) Working stand-off voltage VWM (V) Reverse leakage @ VWM ID (uA) VBR IT VWM IR VC IPPM VC IPPM VBR V mA V μA V A V A %/°C Part Number Clamping Voltage @IPPM (10/1000us) Clamping Voltage @IPPM (8/20us) Maximum temperature coefficient(2) Uni Bi Min Nom Max Max BZW06-13 BZW06-13B 14.3 15 15.8 1 12.8 5 21.2 28.0 27.2 147 0.084 BZW06-15 BZW06-15B 17.1 18 18.9 1 15.3 1 25.2 24.0 32.5 123 0.088 BZW06-19 BZW06-19B 20.9 22 23.1 1 18.8 1 30.6 19.6 39.3 102 0.092 BZW06-20 BZW06-20B 22.8 24 25.2 1 20.5 1 33.2 28.0 42.8 93 0.094 BZW06-23 BZW06-23B 25.7 27 28.4 1 23.1 1 37.5 16.0 48.3 83 0.096 BZW06-26 BZW06-26B 28.5 30 31.5 1 25.6 1 41.5 14.5 53.5 75 0.097 BZW06-28 BZW06-28B 31.4 33 34.7 1 28.2 1 45.7 13.1 59.0 68 0.098 BZW06-31 BZW06-31B 34.2 36 37.8 1 30.8 1 49.9 12.0 64.3 62 0.099 BZW06-33 BZW06-33B 37.1 39 47.0 1 33.3 1 53.9 11.1 69.7 57 0.100 BZW06-37 BZW06-37B 40.9 43 45.2 1 36.8 1 59.3 10.1 75.0 52 0.101 BZW06-40 BZW06-40B 44.7 47 49.4 1 40.2 1 64.8 9.3 84.0 48 0.101 BZW06-48 BZW06-48B 53.2 56 58.8 1 47.8 1 77.0 7.8 100 40 0.103 BZW06-58 BZW06-58B 64.6 68 71.4 1 58.1 1 92.0 6.5 121 33 0.104 BZW06-70 BZW06-70B 77.9 82 86.1 1 70.1 1 113 5.3 146 27 0.105 BZW06-85 BZW06-85B 95 100 105 1 85.5 1 137 4.4 178 23 0.106 BZW06-102 BZW06-102B 114 120 126 1 102 1 165 3.6 212 19 0.107 BZW06-128 BZW06-128B 143 150 158 1 128 1 207 2.9 265 15 0.108 BZW06-154 BZW06-154B 171 180 189 1 154 1 246 2.4 317 13 0.108 BZW06-171 BZW06-171B 190 200 210 1 171 1 274 2.2 353 11 0.108 BZW06-188 BZW06-188B 209 220 231 1 188 1 301 2.0 388 10.3 0.108 BZW06-213 BZW06-213B 237 250 263 1 213 1 344 2.0 442 9.0 0.110 BZW06-256 BZW06-256B 285 300 315 1 256 1 414 1.6 529 7.6 0.110 BZW06-273 BZW06-273B 304 320.0 336 1 273 1 438 1.6 564 7.1 0.110 BZW06-299 BZW06-299B 332 350.0 368 1 299 1 482 1.6 618 6.5 0.110 BZW06-342 BZW06-342B 380 400 420 1 342 1 548 1.3 706 5.7 0.110 BZW06-376 BZW06-376B 418 440 462 1 376 1 603 1.3 776 5.7 0.110 Notes: 1. Pulse test：tp < 50ms 2. ΔVBR = αT * (Tamb - 25) * VBR(25°C) 3. VR = 0V, F = 1MHz, For bidirectional types, capacitance value is divided by 2. 2 Version: K2105 BZW06 SERIES Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING BZW06-x DO-204AC (DO-15) 3,500 / Tape & Reel BZW06-x A0G DO-204AC (DO-15) 1,500 / Ammo box BZW06-xH DO-204AC (DO-15) 3,500 / Tape & Reel BZW06-xHA0G DO-204AC (DO-15) 1,500 / Ammo box Notes: 1. “x” defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376) 2. “H” means AEC-Q101 qualified 3 Version: K2105 BZW06 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve 125 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.3 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 100 75 50 25 0 0 100 25 50 tp, PULSE WIDTH, (ms) INSTANTANEOUS FORWARD CURRENT (A) IPPM, PEAK PULSE CURRENT (%) Rise time tr=10μs to 100% 100 Peak value IPPM 80 60 Half value-IPPM/2 10/1000μs, waveform 40 20 td 0 0 0.5 1 1.5 2 125 150 175 200 Fig.4 Typical Junction Capacitance Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 120 100 AMBIENT TEMPERATURE (°C) Fig.3 Clamping Power Pulse Waveform 140 75 2.5 3 100 10 UF1DLW 1 TJ=150°C 10 0.1 TJ=125°C TJ=25°C TJ=25°C 0.01 1 0.001 0.5 1.0 1.5 2.0 2.5 0.3 0.4 0.5 0.6 Pulse width 3.0 0.7 3.5 0.8 4.0 4.5 5.0 0.9 1 1.1 FORWARD VOLTAGE (V) t, TIME (ms) 4 (A) PPPM, PEAK PULSE POWER, KW 1000 Version: K2105 1.2 BZW06 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Junction Capacitance 10000 10000 1000 CJ, JUNCTION CAPACITANCE (pF) CJ, JUNCTION CAPACITANCE (pF) Fig.5 Typical Junction Capacitance BZW06-13 BZW06-58 100 BZW06-171 10 f=1.0MHz Vsig=50mVp-p 1000 BZW06-13B BZW06-171B 10 f=1.0MHz Vsig=50mVp-p 1 1 10 100 BZW06-58B 100 1 1000 1 10 V(BR), BREAKDOWN VOLTAGE (V) 1000 V(BR), BREAKDOWN VOLTAGE (V) Fig.7 Typical Transient Thermal Impedance Fig.8 Typical Junction Capacitance 100 10000 o TRANSIENT THERMAL IMPEDANCE( C/W) 100 o IR(TJ) / IR(TJ=25 C) 1000 10 100 10 1 0.1 1 0 0 1 10 100 0 1000 25 50 75 100 125 150 TJ (°C) T, PULSE DURATION (s) 5 Version: K2105 BZW06 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.9 Clamping Voltage Curve VCL, CLAMPING VOLTAGE(V) 1000 100 10 tp=20μs tp=1ms tp=10ms 1 0.1 1 10 100 1000 Ipp, PEAK PULSE CURRENT(A) 6 Version: K2105 BZW06 SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AC (DO-15) MARKING DIAGRAM Cathode band for uni-directional products only 7 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2105 BZW06 SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: K2105