C4D08120E
VRRM
Silicon Carbide Schottky Diode
IF (TC=135˚C) =
Z-Rec Rectifier
®
Q c
Features
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= 37 nC
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-252-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Solar Inverters
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
PIN 1
CASE
PIN 2
Applications
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12 A
Package
Benefits
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= 1200 V
Part Number
Package
Marking
C4D08120E
TO-252-2
C4D08120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VDC
DC Blocking Voltage
1200
V
Continuous Forward Current
24.5
12
8
A
TC=25˚C
TC=135˚C
TC=157˚C
IFRM
Repetitive Peak Forward Surge Current
37.5
25
A
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
IFSM
Non-Repetitive Peak Forward Surge Current
64
50
A
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
Fig. 8
IF,Max
Non-Repetitive Peak Forward Current
600
480
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
136.5
59
W
TC=25˚C
TC=110˚C
Fig. 4
VR=0-650V
IF
Ptot
Power Dissipation
dV/dt
Diode dV/dt ruggedness
200
V/ns
∫i2dt
i2t value
20.5
12.5
A2s
-55 to
+175
˚C
TJ , Tstg
1
Value
Operating Junction and Storage Temperature
C4D08120E Rev. F, 01-2017
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
Fig. 3
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
Fig. 1
IR
Reverse Current
35
100
250
350
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
37
nC
VR = 800 V, IF = 8 A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
560
37
27
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
10.5
μJ
VR = 800 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
1.1
°C/W
Fig. 9
Typical Performance
15
500
14
450
TJ=-55°C
TJ= 25°C
TJ= 75°C
T =125°C
13
12
400
TJ =175°C
J
11
350
10
300
IR (μA)
IF (A)
9
8
7
6
5
250
TJ=-55°C
TJ= 25°C
T = 75°C
J
T =125°C
TJ =175°C
J
200
150
4
100
3
2
50
1
0
0
0
0.5
1
1.5
2
2.5
VF (V)
3
3.5
Figure 1. Forward Characteristics
2
C4D08120E Rev. F, 01-2017
4
4.5
0
200
400
600
800
VR (V)
1000
1200
1400
Figure 2. Reverse Characteristics
1600
1800
Typical Performance
80
150
140
70
130
IF(peak) (A)
50
120
Duty
Duty
Duty
Duty
Duty
110
100
PTot (W)
10%
20%
30%
50%
70%
DC
60
40
30
90
80
70
60
50
40
20
30
10
20
10
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TC ˚C
TC ˚C
Figure 3. Current Derating
Figure 4. Power Derating
50
600
45
500
40
400
30
C (pF)
Qc (nC)
35
25
20
200
15
10
100
5
0
0
200
400
600
800
0
1000
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
300
C4D08120E Rev. F, 01-2017
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1000
1000
20.0
20
18
18.0
16
16.0
EC Capacitive
Energy (uJ)
C
14
14.0
(A)
IFSMIFSM
(A)
E (mJ)
12
12.0
10
10.0
8.08
100
100
TJ_initial = 25°C
T
= 110°C
J_initial
6.06
4.04
2.02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
100
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
tp (s)
VR Reverse Voltage (V)
VR (V)
Figure 7. Typical Capacitance Stored Energy
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Thermal Resistance (˚C/W)
1
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
0.01
10E-3
1E-6
10E-6
100E-6
1E-3
10E-3
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D08120E Rev. F, 01-2017
100E-3
1
Package Dimensions
SYMBOL
Package TO-252-2
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
H
L
L2
L3
L4
qθ
MILLIMETERS
MIN
MAX
2.159
2.413
0
0.13
0.64
0.89
0.653
1.143
5.004
5.6
0.457
0.61
0.457
0.864
5.867
6.248
5.21
6.35
7.341
4.32
4.58 BSC
9.65
10.414
1.106
1.78
0.51 BSC
0.889
1.27
0.64
1.01
0°
8°
Tjb June 2015
MX+DI+PSI
Recommended Solder Pad Layout
Part Number
Package
Marking
C4D08120E
TO-252-2
C4D08120
TO-252-2
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C4D08120E Rev. F, 01-2017
Diode Model
Diode Model CSD04060
V
Vf T = fTV=
If*R
T+If*R
T
T +V
T
-3
-3
VT0.965
VT=
+ (T+
-1.3*10
)
= 0.96
)
j * (T
J* -2.1*10
-3
-4
RT0.096
RT=
+ (Tj * 1.06*10
)
= 0.06+(T
*
8.0*10
)
J
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D08120E Rev. F, 01-2017
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power