SMAJ6.0CA

SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor 400W, 5V - 188V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated chip junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 V to BV min Typical IR less than 1μA above 10V 400W peak pulse power capability with a 10/1000μs waveform (300W above 78V) Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 188 V VBR 6.4 - 255 V PPPM tp = 10/1000μs waveform 400 W TJ MAX 150 °C Package DO-214AC (SMA) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation at TA = 25°C, tp = 1ms (Note 1) PPK 400 W Steady state power dissipation PD 1 W IFSM 40 A VF 3.5 V TJ -55 to +150 °C TSTG -55 to +150 °C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 25A for unidirectional only Operating junction temperature range Storage temperature range Notes: 1. Non-repetitive current pulse per Fig.5 and derated above TA = 25°C per Fig.2 Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMAJ5.0 - Types SMAJ188 2. Electrical characteristics apply in both directions 1 Version: U2102 SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Breakdown voltage Part number Marking code VBR@IT(1) (V) SMAJ5.0 SMAJ5.0A SMAJ6.0 SMAJ6.0A SMAJ6.5 SMAJ6.5A SMAJ7.0 SMAJ7.0A SMAJ7.5 SMAJ7.5A SMAJ8.0 SMAJ8.0A SMAJ8.5 SMAJ8.5A SMAJ9.0 SMAJ9.0A SMAJ10 SMAJ10A SMAJ11 SMAJ11A SMAJ12 SMAJ12A SMAJ13 SMAJ13A SMAJ14 SMAJ14A SMAJ15 SMAJ15A SMAJ16 SMAJ16A SMAJ17 SMAJ17A SMAJ18 SMAJ18A SMAJ20 SMAJ20A SMAJ22 SMAJ22A SMAJ24 SMAJ24A SMAJ26 SMAJ26A SMAJ28 SMAJ28A SMAJ30 SMAJ30A SMAJ33 SMAJ33A AD AE AF AG AH AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BD BE BF BG BH BK BL BM BN BP BQ BR BS BT BU BV BW BX BY BZ CD CE CF CG CH CK CL CM Working Test IT Max 6.4 6.4 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 7.30 7.00 8.15 7.37 8.82 7.98 9.51 8.60 10.30 9.21 10.90 9.83 11.50 10.40 12.20 11.10 13.60 12.30 14.90 13.50 16.30 14.70 17.60 15.90 19.10 17.20 20.40 18.50 21.80 19.70 23.10 20.90 24.40 22.10 27.10 24.50 29.80 26.90 32.60 29.50 35.30 31.90 38.00 34.40 40.7 36.8 44.9 40.6 Maximum peak Maximum clamping impulse current voltage leakage current voltage (mA) Min Maximum reverse stand-off current IR@VWM(1) VWM (µA) IPPM (A) (2) VC@IPPM (V)(2) (V) 10 10 10 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5 5 6 6 6.5 6.5 7 7 7.5 7.5 8 8 8.5 8.5 9 9 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 800 800 800 800 500 500 200 200 100 100 50 50 10 10 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 41.7 43.5 35.1 38.8 32.5 35.7 30.1 33.3 28.0 31.0 26.7 29.4 25.2 27.8 23.7 26.0 21.3 23.5 19.9 22.0 18.2 20.1 16.8 18.6 15.5 17.2 14.9 16.4 13.9 15.4 13.1 14.5 12.4 13.7 11.2 12.3 10.2 11.3 9.3 10.3 8.6 9.5 8.0 8.8 7.5 8.3 6.8 7.5 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 Version: U2102 SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Breakdown voltage Part number Marking code VBR@IT(1) (V) SMAJ36 SMAJ36A SMAJ40 SMAJ40A SMAJ43 SMAJ43A SMAJ45 SMAJ45A SMAJ48 SMAJ48A SMAJ51 SMAJ51A SMAJ54 SMAJ54A SMAJ58 SMAJ58A SMAJ60 SMAJ60A SMAJ64 SMAJ64A SMAJ70 SMAJ70A SMAJ75 SMAJ75A SMAJ78 SMAJ78A SMAJ85 SMAJ85A SMAJ90 SMAJ90A SMAJ100 SMAJ100A SMAJ110 SMAJ110A SMAJ120 SMAJ120A SMAJ130 SMAJ130A SMAJ150 SMAJ150A SMAJ160 SMAJ160A SMAJ170 SMAJ170A SMAJ188 SMAJ188A CN CP CQ CR CS CT CU CV CW CX CY CZ RD RE RF RG RH RK RL RM RN RP RQ RR RS RT RU RV RW RX RY RZ SD SE SF SG SH SK SL SM SN SP SQ SR ST SS Min 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 209 209 Working Test IT Maximum peak Maximum clamping impulse current voltage leakage current voltage (mA) Max 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 255 231 Maximum reverse stand-off current IR@VWM(1) VWM (µA) IPPM (A) (2) VC@IPPM (V)(2) (V) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 188 188 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 6.2 6.9 5.6 6.2 5.2 5.8 5.0 5.5 4.7 5.2 4.4 4.9 4.2 4.6 3.9 4.3 3.7 4.1 3.5 3.9 3.2 3.5 3.0 3.3 2.9 3.2 2.0 2.2 1.9 2.1 1.7 1.9 1.6 1.7 1.4 1.6 1.3 1.5 1.1 1.3 1.0 1.2 1.0 1.1 0.9 0.9 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 266 243 287 259 304 275 344 328 Notes: 1. Pulse test with PW = 30ms 2. Non-repetitive current pulse, per Fig.5 and derated above TA = 25°C per Fig.2 3. Peak pulse power waveform is 10/1000µs 4. For bi-directional devices having VR of 10V and under, the IR limit is double. ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMAJx DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 5.0V(SMAJ5.0) to 188V(SMAJ188) 3 Version: U2102 SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Pulse Derating Curve PPPM, PEAK PULSE POWER (KW) 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in Fig.5 10 1 0.1 0.1 1 10 100 1000 PEAK PULSE POWER(PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) Fig.1 Peak Pulse Power Rating Curve 50 25 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig.3 Typical Junction Capacitance Fig.4 Maximum Non-repetitive Forward Surge Current IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) 75 tp, PULSE WIDTH (μs) MEASURED AT ZERO BIAS 1000 100 f=1.0MHz Vsig=50mVp-p 1 100 10000 10000 10 125 MEASURED at STAND-OFF VOLTAGE,Vwm 10 50 8.3ms single half sine wave 40 30 20 10 0 1 100 10 100 NUMBER OF CYCLES AT 60 Hz V(BR), BREAKDOWN VOLTAGE (V) 4 Version: U2102 SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Clamping Power Pulse Waveform 120 IPPM, PEAK PULSE CURRENT (%) 110 Peak value IPPM 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 90 Rise time tr=10μs to 100% of IPPM 80 70 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 50 40 30 20 td 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t, TIME (ms) 5 Version: U2102 SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 6 Version: U2102 SMAJ5.0(A) – SMAJ188(A) Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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