ME2808
Voltage Detectors , ME2808 Series
General Description
Features
ME2808 Series are a set of three-terminal low
Highly accuracy: ± 1%
power voltage detectors implemented in NMOS
Low power consumption:TYP 1.8uA (Vin=3V)
technology. Each voltage detector in the series
Detect
detects a particular fixed voltage ranging from 2.0V
to 7.0V. The voltage detectors consist of a high
precision and low power consumption standard
voltage source, a comparator, hysteresis circuit, and
Selection Guide
range : 2.0V~7.0V
Operating voltage range:1.5V~18V
Detect voltage temperature characteristics:
0.1V
TYP ± 0.9mV/℃
Output configuration: NMOS
Package: SOT23,SOT23-3,SOT23-5,SOT89-3,
TO-92
Typical Application
Package
battery checkers
● 3-pin SOT23、SOT23-3、SOT89-3、TO-92
Level selectors
● 5-pin SOT23-5
Power failure detectors
Microcomputer reset
Battery backup of Memories
Store non-volatile RAM signal protectors
Typical Application Circuit
Vin
Vout
GND
V06
in
increments
an output driver. NMOS technology ensures low
power consumption.
voltage
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Page 1 of 12
ME2808
Selection Guide
ME 28 08 X XX XX G
Environment mark
Package:
X:SOT23
P:SOT89-3
T:TO-92
M3:SOT23-3
M5:SOT23-5
Output Voltage
Function
Product Type
Product Series
Microne
product series
product description
ME2808A25XG
VOUT =2.5V;Rising edge detection;Package:SOT23
ME2808A36XG
VOUT =3.6V;Rising edge detection;Package:SOT23
ME2808A22M3G
VOUT =2.2V;Rising edge detection;Package:SOT23-3
ME2808A33M3G
VOUT =3.3V;Rising edge detection;Package:SOT23-3
ME2808A60M3G
VOUT =6.0V;Rising edge detection;Package:SOT23-3
ME2808A30PG
VOUT =3.0V;Rising edge detection;Package:SOT89-3
ME2808A27TG
VOUT =2.7V;Rising edge detection;Package:TO-92
ME2808A42M5G
VOUT =4.2V;Rising edge detection; Package:SOT23-5
ME2808B28M3G
VOUT =2.8V;Falling edge detection;Package:SOT23-3
NOTE: At present ,there are eighteen kinds of voltage value: 2.2V、2.4V、2.5V、2.7V、2.8V、
3.0V、3.2V、3.3V、3.5V、3.6V、3.8V、3.9V、4.0V、4.2V、4.3V、4.5V、5.0V、6.0V。If you need
other voltage and package, please contact our sales staff.
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Page 2 of 12
ME2808
Pin Configuration
3
3
MARK
MARK
1
1
2
SOT23
MARK
1 2 3
2
SOT23-3
TO-92
5
4
MARK
MARK
1
2
3
1
SOT89-3
2
3
SOT23-5
Pin Assignment
Pin Number
Pin Name
Functions
3
GND
Ground
1
1
VOUT
Output Voltage
2
2
VIN
Input Voltage
4
NC
No Connection
5
NC
No Connection
SOT23
SOT23-3
SOT23-5
SOT89-3
TO-92
2
2
3
3
1
1
1
3
3
2
Block Diagram
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Page 3 of 12
ME2808
Absolute Maximum Ratings
PARAMETER
SYMBAL
RATINGS
UNITS
VIN Input Voltage
VIN
18
V
Output Current
IOUT
50
mA
VOUT
GND-0.3~ VIN +0.3
V
Output Voltage
NMOS
SOT23
Continuous Total Power
Dissipation
250
SOT23-3/5
300
PD
SOT89-3
mW
500
TO-92
500
Operating Ambient Temperature
TOpr
-40~+85
℃
Storage Temperature
Tstg
-50~+125
℃
Soldering temperature and time
Tsolder
260℃, 10s
Electrical Characteristics (VDET =2.0V to 7.0V ,TA=25℃ ,unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
VDET
Detect
Voltage
VDET×0.99
VDET
VDET×1.01
V
VHYS
Hysteresis
Width
VDET×0.02
VDET×0.05
VDET×0.1
V
Operating
Current
IIN
Operating
Voltage
VIN
Output Sink
Current
IOL
∆VDET/∆TA
Temperature
characteristics
VDET=2.0V~ 2.8V
VIN =3.0V
-
1.8
3
VDET =2.8V~ 3.6V
VIN =4.0V
-
1.8
4
VDET =3.6V ~ 4.7V
VIN =5.0V
-
2.1
4
VDET =4.7V~ 7.0V
VIN =8.0V
-
2.5
4
VDET =2.0V to 7.0V
0.7
VDET=2.0V~ 2.8V
VIN =-VDET(S) -0.2
V , VOUT=0.2V
0.5
VDET =2.8V~ 3.6V
VIN =-VDET(S) -0.5
V , VOUT=0.3V
0.5
VDET =3.6V ~ 4.7V
VIN =-VDET(S) -0.5
V , VOUT=0.3V
1.2
VDET =4.7V~ 7.0V
VIN =-VDET(S) -0.5
V , VOUT=0.3V
2.5
0℃≤Topr≤70℃
-
18
±0.9
mV/℃
2、VDF :Actual Detection Voltage value
3、Release Voltage:VDR=VDF+VHYS (ME2808A series)
VDR=VDF-VHYS (ME2808B series)
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V
mA
Note: 1、VDF(S) :Specified Detection Voltage value
V06
μA
Page 4 of 12
ME2808
Functional Description
The ME2808 series is a set of voltage detectors equipped with a high stability voltage reference which is
connected to the negative input of a comparator — denoted as VREF in the following figure (Fig. 1).When the voltage
drop to the positive input of the comparator (i,e,VB) is higher than VREF, VOUT goes high, M1 turns off, and VB is
ex-pressed as VBH=VIN×(RB+RC)/(RA+RB+RC).If VIN is decreased so that VB falls to a value that is less than VREF, the
comparator output inverts (from high to low), VOUT goes low, VC is high, M1 turns on, RC is bypassed, and VB
becomes: VBL=VIN×RB/(RA+RB), which is less than VBH. By so doing the comparator out-put will stay low to prevent
the circuit from oscillating when VB ≈ VREF. If VIN falls bellow the minimum operating voltage, the output becomes
undefined. When VIN goes from low to VIN×RB/(RA+RB) >VREF, the comparator output goes high and VOUT goes high
again. The detection voltage is as defined:
VDET(–)=( RA+RB+RC)×VREF/( RB+RC)
The release voltage is as defined:
VDET(+)=(RA+RB)×VREF / RB
The hysteresis width is:
VHYS=VDET(+)–VDET(–)
Fig.1 demonstrates the NMOS output type with positive output polarity (VOUT is normally high, active low).
Fig.1 NMOS output voltage detector (ME2808)
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Page 5 of 12
ME2808
Timing Chart
ME2808A:
ME2808B:
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Page 6 of 12
ME2808
Packaging Information
● SOT23
DIM
Millimeters
Inches
Min
Max
Min
Max
A
0.9
1.2
0.0354
0.0472
A1
0
0.14
0.0000
0.0055
A2
0.9
1.05
0.0354
0.0413
b
0.28
0.52
0.0110
0.0205
c
0.07
0.23
0.0028
0.0091
D
2.8
3.0
0.1102
0.1181
e1
1.8
2.0
0.0709
0.0787
E
1.2
1.4
0.0472
0.0551
E1
2.2
2.6
0.0866
0.1024
e
0.95(TYP)
0.0374(TYP)
L
0.55(TYP)
0.0217(TYP)
L1
0.25
0.55
0.0098
0.0217
θ
0
8°
0.0000
8°
c1
V06
0.25(TYP)
0.0098(TYP)
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Page 7 of 12
ME2808
● SOT23-3
DIM
A
A1
A2
A3
b
c
D
E
E1
e
L
L1
θ
c1
L1
θ
c1
V06
Millimeters
Min
1
0
0.9
0.6
0.25
0.1
2.8
2.6
1.5
Inches
Max
1.5
0.15
1.3
0.7
0.5
0.25
3.1
3.1
1.8
Min
0.0394
0.0000
0.0354
0.0236
0.0098
0.0039
0.1102
0.1023
0.0591
0.95(TYP)
0.25
0.0374(TYP)
0.6
0.0098
0.59(TYP)
0
0.0236
0.0232(TYP)
8°
0.0000
0.2(TYP)
0.59(TYP)
0
Max
0.0591
0.0059
0.0512
0.0276
0.0197
0.0098
0.1220
0.1220
0.0709
8°
0.0079(TYP)
0.0232(TYP)
8°
0.2(TYP)
0.0000
8°
0.0079(TYP)
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Page 8 of 12
ME2808
● SOT89-3
DIM
A
b
b1
c
D
D1
D2
e1
E
E1
E2
e
L
θ
V06
Millimeters
Min
1.4
0.32
0.4
0.35
4.4
Inches
Max
1.6
0.52
0.58
0.45
4.6
Min
0.0551
0.0126
0.0157
0.0138
0.1732
1.55(TYP)
1.75(TYP)
3.0(TYP)
2.3
3.94
0.061(TYP)
0.0689(TYP)
0.1181(TYP)
2.6
4.4
0.0906
0.1551
1.9(TYP)
1.5(TYP)
0.8
Max
0.0630
0.0205
0.0228
0.0177
0.1811
0.1023
0.1732
0.0748(TYP)
0.0591(TYP)
1.2
45°
0.0315
0.0472
45°
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Page 9 of 12
ME2808
● SOT23-5
DIM
Millimeters
Inches
Min
Max
Min
Max
A
0.9
1.45
0.0354
0.0571
A1
0
0.15
0.0000
0.0059
A2
0.9
1.3
0.0354
0.0512
A3
0.6
0.7
0.0236
0.0276
b
0.25
0.5
0.0098
0.0197
c
0.1
0.26
0.0039
0.0102
D
2.8
3.1
0.1102
0.1220
e1
1.9(TYP)
0.0748(TYP)
E
2.6
3.1
0.1024
0.1201
E1
1.5
1.8
0.0512
0.0709
e
L
0.95(TYP)
0.25
L1
θ
c1
V06
0.0374(TYP)
0.6
0.0098
0.59(TYP)
0
0.0236
0.0232(TYP)
8°
0.2(TYP)
0.0000
8°
0.0079(TYP)
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Page 10 of 12
ME2808
● TO-92
DIM
A
A1
b
c
D
D1
E
e
e1
L
h
Φ
V06
Millimeters
Min
3.3
1.1
0.38
0.36
4.3
3.43
4.3
Inches
Max
3.7
1.4
0.55
0.51
4.7
一
4.7
Min
0.1299
0.0433
0.015
0.0142
0.1693
0.135
0.1693
1.27TYP
2.44
14.1
0
一
Max
0.1457
0.0551
0.0217
0.0201
0.185
一
0.185
0.05TYP
2.64
14.5
0.38
1.6
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0.0961
0.5551
0
一
0.1039
0.5709
0.015
0.063
Page 11 of 12
ME2808
The information described herein is subject to change without notice.
Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams
described herein whose related industrial properties, patents, or other rights belong to third parties.
The application circuit examples explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Nanjing Micro One Electronics Inc is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any
apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro
One Electronics Inc.
Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality
and reliability, the failure or malfunction of semiconductor products may occur. The user of these
products should therefore give thorough consideration to safety design, including redundancy,
fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community
damage that may ensue.
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Page 12 of 12
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