HY1606B

HY1606P/B N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/66A RDS(ON) = 10.4 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available G (RoHS Compliant) G D D S S TO-220FB-3L TO-263-2L Applications  Switching application  Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information P HY1606 Package Code P : TO-220FB-3L B HY1606 Date Code YYXXX WW YYXXXJWW G YYXXXJWW G B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HY1606P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 66 A TC=25°C 250** A TC=25°C 66 TC=100°C 50 TC=25°C 88 TC=100°C 44 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 1.7 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 200** mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1606 Min. Typ. Max. 60 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS=60V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=33A - 10.4 12.5 m ISD=33A, VGS=0V - 0.8 1 V - 33 - ns - 61 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=33A, dlSD/dt=100A/s www.hymexa.com V1.0 2 HY1606P/B Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1606 Min. Typ. Max. - 1.0 - - 2068 - - 764 - - 376 - - 14 - - 13 - - 20 - - 7.2 - - 51 - - 11 - - 17 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=30V, RG= 5 , IDS=33A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=48V, VGS=10V, IDS=33A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com V1.0 3 HY1606P/B Typical Operating Characteristics Drain Current Power Dissipation 175 ID - Drain Current (A) 90 Ptot - Power (W) 150 125 100 75 80 70 60 50 40 30 50 20 25 10 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100us Lim it 100 Rd s(o n) ID - Drain Current (A) 600 1ms 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 10 Normalized Effective Transient Duty = 0.5 0.2 1 0.1 0.05 0.1 0.02 0.01 0.01 Single Mounted on minimum pad o RJA : 62.5 C/W 0.001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com V1.0 4 HY1606P/B Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 16 160 VGS= 6,7,8,9,10V 5.5V 120 ID - Drain Current (A) RDS(ON) - On - Resistance (m) 140 100 80 60 5V 40 20 4.5V 0 0.0 14 VGS =10V 12 10 8.0 6.0 0.5 1.0 1.5 2.0 2.5 0 3.0 20 40 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage 17 15 13 11 9 7 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) 100 IDS =250A IDS=33A RDS(ON) - On - Resistance (m) 80 VDS - Drain-Source Voltage (V) 18 4 60 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) www.hymexa.com V1.0 5 HY1606P/B Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 170 2.4 VGS = 10V 2.2 100 IDS = 33A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=25 C 1 0.6 0.4 o RON@Tj =25 C: 10.4m 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.4 10 6000 Frequency=1MHz VGS - Gate-source Voltage (V) 4800 4200 3600 3000 Ciss 2400 1800 Coss 1200 Crss 600 IDS= 33A 8 7 6 5 4 3 2 1 0 0 0 VDS= 48V 9 5400 C - Capacitance (pF) o Tj=175 C 10 5 10 15 20 VDS - Drain - Source Voltage (V) 0 7 14 21 28 35 42 49 56 QG - Gate Charge (nC) www.hymexa.com V1.0 6 HY1606P/B Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 7 HY1606P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 www.hymexa.com V1.0 8 HY1606P/B Device Per Unit Package Type Unit Quantity TO-263-2L Reel 50 Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ 0.25 BSC 0° 5° www.hymexa.com 9° V1.0 9 HY1606P/B Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 10 HY1606P/B Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 500 Cycles, -55°C~150°C 3 Package Thickness