XB8089D
______________________________________ ________________________________________________________________________________
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB8089D Series product is a high
integration solution for lithiumion/polymer battery protection.
XB8089D contains advanced power
MOSFET, high-accuracy voltage
detection circuits and delay circuits.
XB8089D is put into an SOP8-PP
package and only one external
component makes it an ideal solution in
limited space of battery pack.
XB8089D has all the protection functions
required in the battery application including
overcharging, overdischarging, overcurrent
and load short circuiting protection etc. The
accurate overcharging detection voltage
ensures safe and full utilization charging.
The low standby current drains little current
from the cell while in storage.
The device is not only targeted for digital
cellular phones, but also for any other
Li-Ion and Li-Poly battery-powered
information appliances requiring longterm battery life.
·
Protection of Battery Cell Reverse
Connection
·
Integrate Advanced Power MOSFET
with Equivalent of 20mΩ RSS(ON)
·
SOP8-PP Package
·
Only One External Capacitor
Required
·
Over-temperature Protection
·
Overcharge Current Protection
·
Two-step Overcurrent Detection:
-Overdischarge Current
-Load Short Circuiting
·
Charger Detection Function
·
0V Battery Charging Function
- Delay Times are generated inside
·
High-accuracy Voltage Detection
·
Low Current Consumption
- Operation Mode:6μ A typ.
- Power-down Mode: 3μ A typ.
·
RoHS Compliant and Lead (Pb) Free
APPLICATIONS
One-Cell Lithium-ion Battery Pack
Lithium-Polymer Battery Pack
FEATURES
·
Protection of Charger Reverse
Connection
Figure 1. Typical Application Circuit
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XB8089D
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ORDERING INFORMATION
PART
NUMBER
Overcharg Overcharge Overdischarge Overdischarge Overcurrent
Release
Detection
Release
Detection
Packa e Detection
Voltage
Voltage
Voltage
Voltage
ge
Current
[IOV1] (A)
[VCU] (V)
[VCL] (V)
[VDL] (V)
[VDR] (V)
XB8089D
SOP8
-PP
4.250
4.10
2.50
3.0
10.0
Top Mark
XB8089DYW (note)
Note: “YW” is manufacture date code, “Y” means the year, “W” means the week
PIN CONFIGURATION
Figure 2. PIN Configuration
PIN DESCRIPTION
XB8089D PIN
NUMBER
PIN NAME
1,2,3,4
VM
5,7,8
GND
Ground, connect the negative terminal of the battery to this pin
6
VDD
Power Supply
9
EPAD
Exposed pad,please connect with GND of XB8089D
PIN DESCRIPTION
The negative terminal of the battery pack. The internal FET switch
connects this terminal to GND
ABSOLUTE MAXIMUM RATINGS
(Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating
conditions for long periods may affect device reliability.)
PARAMETER
VALUE
UNIT
VDD input pin voltage
-0.3 to 6
V
VM input pin voltage
-6 to 10
V
Operating Ambient Temperature
-40 to 85
°C
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XB8089D
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Maximum Junction Temperature
____________________________
125
°C
-55 to 150
°C
300
°C
0.625
W
Package Thermal Resistance (Junction to Ambient) θJA
250
°C/W
Package Thermal Resistance (Junction to Case) θJC
130
°C/W
ESD
2000
V
Storage Temperature
Lead Temperature ( Soldering, 10 sec)
Power Dissipation at T=25°C
ELECTRICAL CHARACTERISTICS
Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Detection Voltage
Overcharge Detection Voltage
VCU
Overcharge Release Voltage
VCL
Overdischarge Detection Voltage
VDL
Overdischarge Release Voltage
VDR
V
4.2
4.25
4.3
4.05
4.10
4.15
V
2.4
2.5
2.6
V
2.9
3.0
3.1
V
Detection Current
Overdischarge Current1 Detection
*IIOV1
VDD=3.6V
10
A
Overdischarge Current1 Recovery
*IROV1 VDD=3.6V
6
uA
Overdischarge Current 2 Detection
*IIOV2
VDD=3.6V
15
A
*ISHORT VDD=3.6V
40
A
Load Short-Circuiting
Detection
Current Consumption
Current Consumption in Normal
Operation
IOPE
Current Consumption in power
Down
IPDN
VDD=3.6V
VM =0V
VDD=2.0V
VM pin floating
6
12
μA
3
6
μA
VDD=2.0V
VM pin floating
VDD=3.6V
160
VM Internal Resistance
Internal Resistance between
VM and VDD
*RVMD
Internal Resistance between VM
and GND
*RVMS
kΩ
50
kΩ
VM=1.0V
FET on Resistance
Equivalent FET on Resistance
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*RSS(ON)
VDD=3.6V IVM =1.0A
-3-
mΩ
20
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XB8089D
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Over Temperature Protection
*TSHD+
120
Over Temperature Recovery Degree *TSHD-
100
Over Temperature Protection
oC
Detection Delay Time
Overcharge Voltage Detection
Delay Time
tCU
Overdischarge Voltage Detection
tDL
Delay Time
Overdischarge Current 1 Detection *tIOV1
Delay Time
Overdischarge Current 2 Detection *tIOV2
Delay Time
Load Short-Circuiting Detection
Delay Time
*tSHOR
VDD=3.6V
130
200
mS
40
60
mS
mS
10
VDD=3.6V
0.4
mS
VDD=3.6V
75
uS
T
Note: * ---The parameter is guaranteed by design.
Figure 3. Functional Block Diagram
FUNCTIONAL DESCRIPTION
The XB8089D monitors the voltage and
current of a battery and protects it from
being damaged due to overcharge voltage,
overdischarge voltage, overdischarge
current, and short circuit conditions by
disconnecting the battery from the load
or charger. These functions are required in
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order to operate the battery cell within
specified limits.
The device requires only one external
capacitor. The MOSFET is integrated and
its RSS(ON) is as low as 20mΩ typical.
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XB8089D
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Normal operating mode
If no exception condition is detected,
charging and discharging can be carried
out freely. This condition is called the
normal operating mode.
Overcharge Condition
When the battery voltage becomes higher
than the overcharge detection voltage (VCU)
during charging under normal condition
and the state continues for the overcharge
detection delay time (tCU) or longer, the
XB8089D turns the charging control FET
off to stop charging. This condition is called
the overcharge condition. The overcharge
condition is released in the following two
cases:
1, When the battery voltage drops below
the overcharge release voltage (VCL), the
XB8089D turns the charging control FET
on and returns to the normal condition.
2, When a load is connected and
discharging starts, the XB8089D turns the
charging control FET on and returns to the
normal condition. The release mechanism
is as follows: the discharging current flows
through an internal parasitic diode of the
charging FET immediately after a load is
connected and discharging starts, and the
VM pin voltage increases about 0.7 V
(forward voltage of the diode) from the
GND pin voltage momentarily. The
XB8089D detects this voltage and releases
the overcharge condition. Consequently, in
the case that the battery voltage is equal to
or lower than the overcharge detection
voltage (VCU), the XB8089D returns to the
normal condition immediately, but in the
case the battery voltage is higher than the
overcharge detection voltage (VCU),the chip
does not return to the normal condition
until the battery voltage drops below the
overcharge detection voltage (VCU) even if
the load is connected. In addition, if the VM
pin voltage is equal to or lower than the
overcurrent detection voltage when a load
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is connected and discharging starts, the
chip does not return to the normal
condition.
Remark If the battery is charged to a voltage higher
than the overcharge detection voltage (VCU) and
the battery voltage does not drops below the
overcharge detection voltage (VCU) even when a
heavy load, which causes an overcurrent, is
connected, the overcurrent do not work until the
battery voltage drops below the overcharge
detection voltage (VCU). Since an actual battery has,
however, an internal impedance of several dozens
of mΩ , and the battery voltage drops immediately
after a heavy load which causes an overcurrent is
connected, the overcurrent work. Detection of load
short-circuiting works regardless of the battery
voltage.
Overdischarge Condition
When the battery voltage drops below the
overdischarge detection voltage (VDL)
during discharging under normal condition
and it continues for the overdischarge
detection delay time (tDL) or longer, the
XB8089D turns the discharging control
FET off and stops discharging. This
condition is called overdischarge condition.
After the discharging control FET is turned
off, the VM pin is pulled up by the RVMD
resistor
between VM and VDD in XB8089D.
Meanwhile when VM is bigger than 1.5
V (typ.) (the load short-circuiting detection
voltage), the current of the chip is reduced
to the power-down current (IPDN). This
condition is called power-down condition.
The VM and VDD pins are shorted by the
RVMD resistor in the IC under the
overdischarge and power-down conditions.
The power-down condition is released
when a charger is connected and the
potential difference between VM and VDD
becomes 1.3 V (typ.) or higher (load shortcircuiting detection voltage). At this time,
the FET is still off. When the battery
voltage becomes the overdischarge
detection voltage (VDL) or higher (see note),
the XB8089D turns the FET on and
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XB8089D
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changes to the normal condition from the
overdischarge condition.
delay time (tCU) or longer, the XB8089D
turns the charging control FET off and
stops charging. This action is called
abnormal charge current detection.
Abnormal charge current detection works
when the discharging control FET is on
and the VM pin voltage drops below the
charger detection voltage (VCHA). When an
abnormal charge current flows into a
battery in the overdischarge condition, the
XB8089D consequently turns the charging
control FET off and stops charging after
the battery voltage becomes the
overdischarge detection voltage and the
overcharge detection delay time (tCU)
elapses.
Abnormal charge current detection is
released when the voltage difference
between VM pin and GND pin becomes
lower than the charger detection voltage
(VCHA) by separating the charger. Since the
0 V battery charging function has higher
priority than the abnormal charge current
detection function, abnormal charge
current may not be detected by the product
with the 0 V battery charging function while
the battery voltage is low.
Remark If the VM pin voltage is no less than the
charger detection voltage (VCHA), when the battery
under overdischarge condition is connected to a
charger, the overdischarge condition is released
(the discharging control FET is turned on) as usual,
provided that the battery voltage reaches the
overdischarge release voltage (VDU) or higher.
Overcurrent Condition
When the discharging current becomes
equal to or higher than a specified value
(the VM pin voltage is equal to or higher
than the overcurrent detection voltage)
during discharging under normal condition
and the state continues for the overcurrent
detection delay time or longer, the
XB8089D turns off the discharging control
FET to stop discharging. This condition is
called overcurrent condition. (The
overcurrent
includes overcurrent, or load shortcircuiting.)
The VM and GND pins are shorted
internally by the RVMS resistor under the
overcurrent condition. When a load is
connected, the VM pin voltage equals the
VDD voltage due to the load.
The overcurrent condition returns to the
normal condition when the load is released
and the impedance between the B+ and Bpins becomes higher than the automatic
recoverable impedance. When the load is
removed, the VM pin goes back to the
GND potential since the VM pin is shorted
the GND pin with the RVMS resistor.
Detecting that the VM pin potential is lower
than the overcurrent detection voltage
(VIOV1), the IC returns to the normal
condition.
Load Short-circuiting condition
If voltage of VM pin is equal or below
short circuiting protection voltage (VSHORT),
the XB8089D will stop discharging and
battery is disconnected from load. The
maximum delay time to switch current off is
tSHORT. This status is released when voltage
of VM pin is higher than short protection
voltage (VSHORT), such as when
disconnecting the load.
Delay Circuits
The detection delay time for overdischarge
current 2 and load short-circuiting starts
when overdischarge current 1 is detected.
As soon as overdischarge current 2 or load
short-circuiting is detected over detection
Abnormal Charge Current Detection
If the VM pin voltage drops below the
charger detection voltage (VCHA) during
charging under the normal condition and it
continues for the overcharge detection
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XB8089D
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delay time for overdischarge current 2 or
load short- circuiting, the XB8089D stops
discharging. When battery voltage falls
below overdischarge detection voltage due
to overdischarge current, the XB8089D stop
discharging by overdischarge current
detection. In this case the recovery of battery
voltage is so slow that if battery voltage
after overdischarge voltage detection delay
time is still lower than overdischarge
detection voltage, the XB8089D shifts to
power-down.
(V0CHA) or higher is connected between B+
and B- pins, the charging control FET gate
is fixed to VDD potential. When the voltage
between the gate and the source of the
charging control FET becomes equal to or
higher than the turn-on voltage by the
charger voltage, the charging control FET
is turned on to start charging. At this time,
the discharging control FET is off and the
charging current flows through the internal
parasitic diode in the discharging control
FET. If the battery voltage becomes equal
to or higher than the overdischarge release
voltage (VDU), the normal condition returns.
Note
(1) Some battery providers do not recommend
charging of completely discharged batteries. Please
refer to battery providers before the selection of 0 V
battery charging function.
(2) The 0V battery charging function has higher
priority than the abnormal charge current detection
function. Consequently, a product with the 0 V
battery charging function charges a battery and
abnormal charge current cannot be detected during
the battery voltage is low (at most 1.8 V or lower).
(3) When a battery is connected to the IC for the
first time, the IC may not enter the normal condition
in which discharging is possible. In this case, set
the VM pin voltage equal to the GND voltage (short
the VM and GND pins or connect a charger) to
enter the normal condition.
Figure 4. Overcurrent delay time
0V Battery Charging Function (1) (2) (3)
This function enables the charging of a
connected battery whose voltage is 0 V by
self-discharge. When a charger having 0 V
battery start charging charger voltage
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XB8089D
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TIMING CHART
1.
Overcharge and overdischarge detection
VCU
VCU-VHC
Battery
voltage
VDL+VDH
VDL
ON
DISCHARGE
OFF
ON
CHARGE
OFF
VDD
VMVov1
VSS
VCHA
Charger connection
Load connection
tCL
tCU
(1)
(2)
(1)
(1)
(3)
Figure5-1 Overcharge and Overdischarge Voltage Detection
2.
Overdischarge current detection
VCU
VCU-VHC
Battery
voltage
VDL+VDH
VDL
ON
DISCHARGE
OFF
VDD
VSHORT
VM
Vov2
Vov1
VSS
Charger connection
Load connection
tIOV2
tIOV1
(1)
(4)
(1)
tSHORT
(4)
(1)
(4)
(1)
Figure5-2 Overdischarge Current Detection
Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)
Overcurrent condition
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XB8089D
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3.
____________________________
Charger Detection
VCU
VCU-VHC
Battery
voltage
VDL+VDH
VDL
ON
DISCHARGE
OFF
VDD
VM
VSS
VCHA
Charger connection
Load connection
tDL
(1)
(3)
(1)
Figure5-3 Charger Detection
4.
Abnormal Charger Detection
VCU
VCU-VHC
Battery
voltage
VDL+VDH
VDL
ON
DISCHARGE
OFF
ON
CHARGE
OFF
VDD
VM
VSS
VCHA
Charger connection
Load connection
tCU
tDL
(1)
(3)
(1)
(2)
(1)
Figure5-4 Abnormal Charger Detection
Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)
Overcurrent condition)
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XB8089D
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TYPICAL APPLICATION
As shown in Figure 6, the bold line is the high density current path which must be kept as
short as possible. For thermal management, ensure that these trace widths are adequate. C is
a decoupling capacitor which should be placed as close as possible to XB8089D.
Fig 6 XB8089D in a Typical Battery Protection Circuit
Precautions
• Pay attention to the operating conditions for input/output voltage and load current so that the
power loss in XB8089D does not exceed the power dissipation of the package.
• Do not apply an electrostatic discharge to this XB8089D that exceeds the performance
ratings of the built-in electrostatic protection circuit.
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XB8089D
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PACKAGE OUTLINE
SOP8-EPAD PACKAGE OUTLINE AND DIMENSIONS
SYMBOL
A
A1
A2
B
C
D
E
E1
e
L
F
G
Dimension in Dimension in
Millimeters
Inches
MIN
MAX
MIN
MAX
1.35
1.75 0.053 0.069
0.100 0.250 0.004 0.010
1.350 1.550 0.053 0.061
0.330 0.510 0.013 0.020
0.190 0.250 0.007 0.010
4.700 5.100 0.185 0.201
3.800 4.000 0.150 0.157
5.800 6.300 0.228 0.248
1.27 TYP
0.050 TYP
0.400 1.270 0.016 0.050
0o
8o
0o
8o
2.26
2.56 0.089 0.101
3.15
3.45 0.124 0.136
In order to increase the driver current capability of XB8089D and improve the
temperature of package, Please ensure Epad and enough ground PCB to release
energy.
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XB8089D
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DISCLAIMER
The information described herein is subject to change without notice.
Xysemi Inc. is not responsible for any problems caused by circuits or
diagrams described herein whose ralated industial properties,patents,or
other rights belong to third parties. The application circuit examples
explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.
When the products described herein are regulated products subject to the
Wassenaar Arrangement or other arrangements, they may not be exported
without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or
reproduction or copying without express permission of Xysemi Inc. is
strictly prohibited.
The products described herein cannot be used as part of any device or
equipment affecting the human body,such as exercise equipment ,medical
equipment, security systems, gas equipment,or any aparatus installed in
airplanes and other vehicles,without prior written pemission of Xysemi Inc.
Although Xysemi Inc. exerts the greatest possible effort to ensure high
quality and reliability, the failure or malfunction of semiconductor may
occur. The use of these products should therefore give thorough
consideration to safty design,including redundancy, fire-prevention
measure and malfunction prevention, to prevent any accidents,fires,or
community damage that may ensue.
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