TSM260P02CX6 RFG

TSM260P02 Taiwan Semiconductor P-Channel Power MOSFET -20V, -6.5A, 26mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Fast switching ● Suitable for -1.8V Gate Drive Applications ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound PARAMETER VALUE UNIT VDS -20 V ID -6.5 A RDS(on) (max) VGS = -4.5V 26 VGS = -2.5V 32 VGS = -1.8V 40 Qg mΩ 19.5 nC APPLICATION ● Battery Pack ● Portable Devices SOT-26 SOT-23 Note: 1. MSL 1 (Moisture Sensitivity Level) for SOT-26 per J-STD-020 2. MSL 3 (Moisture Sensitivity Level) for SOT-23 per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current Pulsed Drain Current TC = 25°C ID TC = 100°C (Note 1) Total Power Dissipation TC = 25°C Operating Junction Temperature Operating Junction and Storage Temperature Range -6.5 A -4.1 IDM -26 A PDTOT 1.56 W TJ 150 ºC TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 80 °C/W THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA is shown for single device operation on FR-4 PCB in still air. Document Number: DS_P0000208 1 Version: D1811 TSM260P02 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 2) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.3 -0.6 -1.0 V Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- -- ±100 nA -- -- -1 -- -- -10 -- 21 26 -- 26 32 -- 32 40 gfs -- 15 -- Qg -- 19.5 -- Qgs -- 2 -- Qgd -- 3.6 -- Ciss -- 1670 -- Coss -- 220 -- Crss -- 120 -- td(on) -- 10.4 -- tr -- 37.5 -- td(off) -- 89.1 -- tf -- 24.6 -- VSD -- -- -1 V Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V VDS = -16V, TJ = 125ºC IDSS VGS = -4.5V, ID = -5A Drain-Source On-State Resistance VGS = -2.5V, ID = -4A RDS(on) VGS = -1.8V, ID = -3A Forward Transconductance Dynamic VDS = -10V, IS = -5A µA mΩ S (Note 3) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -5A, VGS =- 4.5V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, F = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -10V, ID = -1A, VGS = -4.5V, RGEN =25Ω Turn-Off Fall Time ns Source-Drain Diode Forward Voltage VGS = 0V, IS = -1A Continuous Forward Current Integral reverse diode IS -- -- -6.5 A Pulse Forward Current in the MOSFET ISM -- -- -26 A Notes: 1. Pulse width limited by safe operating area 2. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 3. Switching time is essentially independent of operating temperature. Document Number: DS_P0000208 2 Version: D1811 TSM260P02 Taiwan Semiconductor ORDERING INFORMATION PACKAGE PACKING TSM260P02CX RFG ORDERING CODE SOT-23 3,000pcs / 7” Reel TSM260P02CX6 RFG SOT-26 3,000pcs / 7” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000208 3 Version: D1811 TSM260P02 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Gate Charge -ID, Continuous Drain Current (A) -VGS, Gate to Source Voltage (V) Continuous Drain Current vs. T C Qg, Gate Charge (nC) On-Resistance vs. Junction Temperature Threshold Voltage vs. Junction Temperature Normalized On Resistance Normalized Gate Threshold Voltage TC, Case Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Normalized Thermal Transient Impedance Curve -ID, Drain Current (A) Normalized Thermal Response TJ, Junction Temperature (°C) Square Wave Pulse Duration (s) -VDS, Drain to Source Voltage (V) Document Number: DS_P0000208 4 Version: D1811 TSM260P02 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 26 = Device Code Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000208 5 Version: D1811 TSM260P02 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-26 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 26YML 26 = Device Code Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000208 6 Version: D1811 TSM260P02 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000208 7 Version: D1811