S-1002CA10I-M5T1U

S-1002 Series www.ablic.com www.ablicinc.com VOLTAGE DETECTOR WITH SENSE PIN © ABLIC Inc., 2014-2016 Rev.1.1_03 The S-1002 Series is a high-accuracy voltage detector developed using CMOS technology. The detection voltage is fixed internally with an accuracy of 1.0% (VDET(S)  2.2 V). It operates with current consumption of 500 nA typ. Apart from the power supply pin, the detection voltage input pin (SENSE pin) is also prepared, so the output is stable even if the SENSE pin falls to 0 V. Two output forms Nch open-drain output and CMOS output are available.  Features  Detection voltage:  Detection voltage accuracy:       1.0 V to 5.0 V (0.1 V step) 1.0% (2.2 V  VDET(S)  5.0 V) 22 mV (1.0 V  VDET(S)  2.2 V) Current consumption: 500 nA typ. Operation voltage range: 0.95 V to 10.0 V Hysteresis width: 5%  2% Output form: Nch open-drain output (Active "L") CMOS output (Active "L") Operation temperature range: Ta = 40°C to 85°C Lead-free (Sn 100%), halogen-free  Applications  Power supply monitor for microcomputer and reset for CPU  Constant voltage power supply monitor for TV, Blu-ray recorder and home appliance  Power supply monitor for portable devices such as notebook PC, digital still camera and mobile phone  Packages  SOT-23-5  SC-82AB 1 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Block Diagrams 1. S-1002 Series NA / NB type (Nch open-drain output) SENSE Function Status Output logic Active "L" VDD  *1 *1 OUT  *1 VREF VSS *1. Parasitic diode Figure 1 2. S-1002 Series CA / CB type (CMOS output) SENSE Function Status Output logic Active "L" VDD *1  *1 *1  OUT *1 VREF VSS *1. Parasitic diode Figure 2 2 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Product Name Structure Users can select the output form, detection voltage value, and package type for the S-1002 Series. Refer to "1. Product name" regarding the contents of product name, "2. Function list of product types" regarding the product types, "3. Packages" regarding the package drawings and "4. Product name list" regarding details of product name. 1. Product name S-1002 x x xx I - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications*1 M5T1: SOT-23-5, Tape N4T1: SC-82AB, Tape Operation temperature I: Ta = 40C to 85C Detection voltage value 10 to 50 (e.g., when the detection voltage is 1.0 V, it is expressed as 10.) Pin configuration*2 A, B Output form*3 N: Nch open-drain output (Active "L")*4 C: CMOS output (Active "L")*4 *1. *2. *3. *4. 2. Refer to the tape drawing. Refer to " Pin Configurations". Refer to "2. Function list of product types". If you request the product with output logic active "H", contact our sales office. Function list of product types Table 1 Product Type NA NB CA CB 3. Output Form Output Logic Nch open-drain output CMOS output Pin Configuration Package A B A B SOT-23-5 SOT-23-5, SC-82AB SOT-23-5 SOT-23-5, SC-82AB Active "L" Active "L" Active "L" Active "L" Packages Table 2 Package Drawing Codes Package Name SOT-23-5 Dimension MP005-A-P-SD SC-82AB NP004-A-P-SD Tape MP005-A-C-SD NP004-A-C-SD NP004-A-C-S1 Reel MP005-A-R-SD NP004-A-R-SD 3 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series 4. Rev.1.1_03 Product name list 4. 1 S-1002 Series NA type Output form: Nch open-drain output (Active "L") Table 3 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% 4 SOT-23-5 S-1002NA10I-M5T1U S-1002NA11I-M5T1U S-1002NA12I-M5T1U S-1002NA13I-M5T1U S-1002NA14I-M5T1U S-1002NA15I-M5T1U S-1002NA16I-M5T1U S-1002NA17I-M5T1U S-1002NA18I-M5T1U S-1002NA19I-M5T1U S-1002NA20I-M5T1U S-1002NA21I-M5T1U S-1002NA22I-M5T1U S-1002NA23I-M5T1U S-1002NA24I-M5T1U S-1002NA25I-M5T1U S-1002NA26I-M5T1U S-1002NA27I-M5T1U S-1002NA28I-M5T1U S-1002NA29I-M5T1U S-1002NA30I-M5T1U S-1002NA31I-M5T1U S-1002NA32I-M5T1U S-1002NA33I-M5T1U S-1002NA34I-M5T1U S-1002NA35I-M5T1U S-1002NA36I-M5T1U S-1002NA37I-M5T1U S-1002NA38I-M5T1U S-1002NA39I-M5T1U S-1002NA40I-M5T1U S-1002NA41I-M5T1U S-1002NA42I-M5T1U S-1002NA43I-M5T1U S-1002NA44I-M5T1U S-1002NA45I-M5T1U S-1002NA46I-M5T1U S-1002NA47I-M5T1U S-1002NA48I-M5T1U S-1002NA49I-M5T1U S-1002NA50I-M5T1U VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 4. 2 S-1002 Series NB type Output form: Nch open-drain output (Active "L") Table 4 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% SOT-23-5 S-1002NB10I-M5T1U S-1002NB11I-M5T1U S-1002NB12I-M5T1U S-1002NB13I-M5T1U S-1002NB14I-M5T1U S-1002NB15I-M5T1U S-1002NB16I-M5T1U S-1002NB17I-M5T1U S-1002NB18I-M5T1U S-1002NB19I-M5T1U S-1002NB20I-M5T1U S-1002NB21I-M5T1U S-1002NB22I-M5T1U S-1002NB23I-M5T1U S-1002NB24I-M5T1U S-1002NB25I-M5T1U S-1002NB26I-M5T1U S-1002NB27I-M5T1U S-1002NB28I-M5T1U S-1002NB29I-M5T1U S-1002NB30I-M5T1U S-1002NB31I-M5T1U S-1002NB32I-M5T1U S-1002NB33I-M5T1U S-1002NB34I-M5T1U S-1002NB35I-M5T1U S-1002NB36I-M5T1U S-1002NB37I-M5T1U S-1002NB38I-M5T1U S-1002NB39I-M5T1U S-1002NB40I-M5T1U S-1002NB41I-M5T1U S-1002NB42I-M5T1U S-1002NB43I-M5T1U S-1002NB44I-M5T1U S-1002NB45I-M5T1U S-1002NB46I-M5T1U S-1002NB47I-M5T1U S-1002NB48I-M5T1U S-1002NB49I-M5T1U S-1002NB50I-M5T1U SC-82AB S-1002NB10I-N4T1U S-1002NB11I-N4T1U S-1002NB12I-N4T1U S-1002NB13I-N4T1U S-1002NB14I-N4T1U S-1002NB15I-N4T1U S-1002NB16I-N4T1U S-1002NB17I-N4T1U S-1002NB18I-N4T1U S-1002NB19I-N4T1U S-1002NB20I-N4T1U S-1002NB21I-N4T1U S-1002NB22I-N4T1U S-1002NB23I-N4T1U S-1002NB24I-N4T1U S-1002NB25I-N4T1U S-1002NB26I-N4T1U S-1002NB27I-N4T1U S-1002NB28I-N4T1U S-1002NB29I-N4T1U S-1002NB30I-N4T1U S-1002NB31I-N4T1U S-1002NB32I-N4T1U S-1002NB33I-N4T1U S-1002NB34I-N4T1U S-1002NB35I-N4T1U S-1002NB36I-N4T1U S-1002NB37I-N4T1U S-1002NB38I-N4T1U S-1002NB39I-N4T1U S-1002NB40I-N4T1U S-1002NB41I-N4T1U S-1002NB42I-N4T1U S-1002NB43I-N4T1U S-1002NB44I-N4T1U S-1002NB45I-N4T1U S-1002NB46I-N4T1U S-1002NB47I-N4T1U S-1002NB48I-N4T1U S-1002NB49I-N4T1U S-1002NB50I-N4T1U 5 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series 4. 3 Rev.1.1_03 S-1002 Series CA type Output form: CMOS output (Active "L") Table 5 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% 6 SOT-23-5 S-1002CA10I-M5T1U S-1002CA11I-M5T1U S-1002CA12I-M5T1U S-1002CA13I-M5T1U S-1002CA14I-M5T1U S-1002CA15I-M5T1U S-1002CA16I-M5T1U S-1002CA17I-M5T1U S-1002CA18I-M5T1U S-1002CA19I-M5T1U S-1002CA20I-M5T1U S-1002CA21I-M5T1U S-1002CA22I-M5T1U S-1002CA23I-M5T1U S-1002CA24I-M5T1U S-1002CA25I-M5T1U S-1002CA26I-M5T1U S-1002CA27I-M5T1U S-1002CA28I-M5T1U S-1002CA29I-M5T1U S-1002CA30I-M5T1U S-1002CA31I-M5T1U S-1002CA32I-M5T1U S-1002CA33I-M5T1U S-1002CA34I-M5T1U S-1002CA35I-M5T1U S-1002CA36I-M5T1U S-1002CA37I-M5T1U S-1002CA38I-M5T1U S-1002CA39I-M5T1U S-1002CA40I-M5T1U S-1002CA41I-M5T1U S-1002CA42I-M5T1U S-1002CA43I-M5T1U S-1002CA44I-M5T1U S-1002CA45I-M5T1U S-1002CA46I-M5T1U S-1002CA47I-M5T1U S-1002CA48I-M5T1U S-1002CA49I-M5T1U S-1002CA50I-M5T1U VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 4. 4 S-1002 Series CB type Output form: CMOS output (Active "L") Table 6 Detection Voltage 1.0 V  22 mV 1.1 V  22 mV 1.2 V  22 mV 1.3 V  22 mV 1.4 V  22 mV 1.5 V  22 mV 1.6 V  22 mV 1.7 V  22 mV 1.8 V  22 mV 1.9 V  22 mV 2.0 V  22 mV 2.1 V  22 mV 2.2 V  1.0% 2.3 V  1.0% 2.4 V  1.0% 2.5 V  1.0% 2.6 V  1.0% 2.7 V  1.0% 2.8 V  1.0% 2.9 V  1.0% 3.0 V  1.0% 3.1 V  1.0% 3.2 V  1.0% 3.3 V  1.0% 3.4 V  1.0% 3.5 V  1.0% 3.6 V  1.0% 3.7 V  1.0% 3.8 V  1.0% 3.9 V  1.0% 4.0 V  1.0% 4.1 V  1.0% 4.2 V  1.0% 4.3 V  1.0% 4.4 V  1.0% 4.5 V  1.0% 4.6 V  1.0% 4.7 V  1.0% 4.8 V  1.0% 4.9 V  1.0% 5.0 V  1.0% SOT-23-5 S-1002CB10I-M5T1U S-1002CB11I-M5T1U S-1002CB12I-M5T1U S-1002CB13I-M5T1U S-1002CB14I-M5T1U S-1002CB15I-M5T1U S-1002CB16I-M5T1U S-1002CB17I-M5T1U S-1002CB18I-M5T1U S-1002CB19I-M5T1U S-1002CB20I-M5T1U S-1002CB21I-M5T1U S-1002CB22I-M5T1U S-1002CB23I-M5T1U S-1002CB24I-M5T1U S-1002CB25I-M5T1U S-1002CB26I-M5T1U S-1002CB27I-M5T1U S-1002CB28I-M5T1U S-1002CB29I-M5T1U S-1002CB30I-M5T1U S-1002CB31I-M5T1U S-1002CB32I-M5T1U S-1002CB33I-M5T1U S-1002CB34I-M5T1U S-1002CB35I-M5T1U S-1002CB36I-M5T1U S-1002CB37I-M5T1U S-1002CB38I-M5T1U S-1002CB39I-M5T1U S-1002CB40I-M5T1U S-1002CB41I-M5T1U S-1002CB42I-M5T1U S-1002CB43I-M5T1U S-1002CB44I-M5T1U S-1002CB45I-M5T1U S-1002CB46I-M5T1U S-1002CB47I-M5T1U S-1002CB48I-M5T1U S-1002CB49I-M5T1U S-1002CB50I-M5T1U SC-82AB S-1002CB10I-N4T1U S-1002CB11I-N4T1U S-1002CB12I-N4T1U S-1002CB13I-N4T1U S-1002CB14I-N4T1U S-1002CB15I-N4T1U S-1002CB16I-N4T1U S-1002CB17I-N4T1U S-1002CB18I-N4T1U S-1002CB19I-N4T1U S-1002CB20I-N4T1U S-1002CB21I-N4T1U S-1002CB22I-N4T1U S-1002CB23I-N4T1U S-1002CB24I-N4T1U S-1002CB25I-N4T1U S-1002CB26I-N4T1U S-1002CB27I-N4T1U S-1002CB28I-N4T1U S-1002CB29I-N4T1U S-1002CB30I-N4T1U S-1002CB31I-N4T1U S-1002CB32I-N4T1U S-1002CB33I-N4T1U S-1002CB34I-N4T1U S-1002CB35I-N4T1U S-1002CB36I-N4T1U S-1002CB37I-N4T1U S-1002CB38I-N4T1U S-1002CB39I-N4T1U S-1002CB40I-N4T1U S-1002CB41I-N4T1U S-1002CB42I-N4T1U S-1002CB43I-N4T1U S-1002CB44I-N4T1U S-1002CB45I-N4T1U S-1002CB46I-N4T1U S-1002CB47I-N4T1U S-1002CB48I-N4T1U S-1002CB49I-N4T1U S-1002CB50I-N4T1U 7 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Pin Configurations 1. S-1002 Series NA / CA type 1. 1 SOT-23-5 Top view 5 4 1 2 3 Figure 3 Table 7 Pin No. Symbol Pin Configuration A Description 1 OUT Voltage detection output pin 2 VDD Power supply pin 3 VSS GND pin *1 NC 4 No connection 5 SENSE Detection voltage input pin *1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 2. S-1002 Series NB / CB type 2. 1 SOT-23-5 Top view 5 4 1 2 3 Figure 4 2. 2 Table 8 Pin No. Symbol Description 1 OUT Voltage detection output pin 2 VSS GND pin 3 VDD Power supply pin 4 SENSE Detection voltage input pin NC*1 5 No connection *1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. SC-82AB Top view 4 1 3 2 Figure 5 8 Pin Configuration B Table 9 Pin No. 1 2 3 4 Symbol SENSE VDD OUT VSS Pin Configuration B Description Detection voltage input pin Power supply pin Voltage detection output pin GND pin VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Absolute Maximum Ratings Table 10 (Ta = 25°C unless otherwise specified) Item Symbol VDDVSS VSENSE Power supply voltage SENSE pin input voltage Nch open-drain output product Output voltage VOUT CMOS output product Output current IOUT SOT-23-5 Power dissipation PD SC-82AB Operation ambient temperature Topr Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm  76.2 mm  t1.6 mm (2) Name: JEDEC STANDARD51-7 Unit V V V V mA mW mW °C °C The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 Power Dissipation (PD) [mW] Caution Absolute Maximum Rating 12.0 VSS  0.3 to 12.0 VSS  0.3 to 12.0 VSS  0.3 to VDD  0.3 50 *1 600 350*1 40 to 85 40 to 125 600 500 SC-82AB 300 200 100 0 Figure 6 SOT-23-5 400 0 150 100 50 Ambient Temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) 9 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Electrical Characteristics 1. Nch open-drain output product Table 11 Item Symbol Detection voltage*1 VDET Hysteresis width VHYS Current ISS *2 consumption Operation voltage VDD (Ta = 25°C unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit VDET(S) VDET(S) VDET(S) V 1 1.0 V  VDET(S)  2.2 V  0.022  0.022 0.95 V  VDD  10.0 V VDET(S) VDET(S) VDET(S) V 1 2.2 V  VDET(S)  5.0 V  0.99  1.01 VDET VDET VDET V 1   0.03  0.05  0.07 VDD = 10.0 V, VSENSE = VDET(S)  1.0 V  0.50 0.90 A 2 0.95 0.59 0.73 1.47 1.86  1.00 1.33 2.39 2.50 10.0     V mA mA mA mA 1 3 3 3 3   0.08 A 3 VDET Ta = 40°C to 85°C Ta VDET  100 tDET  40  VDD = 0.95 V VDD = 1.2 V VDD = 2.4 V VDD = 4.8 V Output current IOUT Output transistor Nch VDS*3 = 0.5 V VSENSE = 0.0 V Leakage current ILEAK Output transistor Nch *3 VDD = 10.0 V, VDS = 10.0 V, VSENSE = 10.0 V Detection voltage temperature coefficient*4 Detection *5 delay time Release *6 delay time VDD = 5.0 V 350 ppm/C  s 1 4  40  s 4 VDET(S)  2.4 V 2.4 V  VDET(S)  80  s 4 5.0 19.0 42.0 M 2 1.0 V  VDET(S)  1.2 V SENSE pin RSENSE resistance 1.2 V  VDET(S)  5.0 V 6.0 30.0 98.0 M 2 *1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage range in Table 3 or Table 4) *2. The current flowing through the SENSE pin resistance is not included. *3. VDS: Drain-to-source voltage of the output transistor *4. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation. tRESET VDD = 5.0 V VDET VDET [mV/°C]*1 = VDET(S) (typ.)[V]*2  Ta  V [ppm/°C]*3  1000 Ta DET *5. *6. 10 *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient The time period from when the pulse voltage of 6.0 V  VDET(S)  2.0 V or 0 V is applied to the SENSE pin to when VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 k. The time period from when the pulse voltage of 0 V  VDET(S)  2.0 V or 6.0 V is applied to the SENSE pin to when VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 k. VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 2. CMOS output product Table 12 Item Symbol Detection voltage*1 VDET Hysteresis width VHYS Current ISS *2 consumption Operation voltage VDD Output current Detection voltage temperature coefficient*4 Detection *5 delay time Release *6 delay time (Ta = 25°C unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit VDET(S) VDET(S) VDET(S) V 1 1.0 V  VDET(S)  2.2 V  0.022  0.022 0.95 V  VDD  10.0 V VDET(S) VDET(S) VDET(S) V 1 2.2 V  VDET(S)  5.0 V  0.99  1.01 VDET VDET VDET V 1   0.03  0.05  0.07  0.50 0.90 A 2  VDD = 0.95 V VDD = 1.2 V VDD = 2.4 V VDD = 4.8 V 0.95 0.59 0.73 1.47 1.86  1.00 1.33 2.39 2.50 10.0     V mA mA mA mA 1 3 3 3 3 VDD = 4.8 V 1.62 2.60  mA 5 VDD = 6.0 V 1.78 2.86  mA 5 VDET Ta = 40°C to 85°C Ta VDET  100 350 ppm/C 1 tDET  40  s 4 IOUT VDD = 10.0 V, VSENSE = VDET(S)  1.0 V Output transistor Nch VDS*3 = 0.5 V VSENSE = 0.0 V Output transistor Pch VDS*3 = 0.5 V VSENSE = 10.0 V VDD = 5.0 V VDET(S)  2.4 V  40  s 4 2.4 V  VDET(S)  80  s 4 1.0 V  VDET(S)  1.2 V 5.0 19.0 42.0 M 2 SENSE pin RSENSE resistance 1.2 V  VDET(S)  5.0 V 6.0 30.0 98.0 M 2 *1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage range in Table 5 or Table 6) *2. The current flowing through the SENSE pin resistance is not included. *3. VDS: Drain-to-source voltage of the output transistor *4. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation. tRESET VDD = 5.0 V VDET VDET [mV/°C]*1 = VDET(S) (typ.)[V]*2  Ta  V [ppm/°C]*3  1000 Ta DET *5. *6. *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient The time period from when the pulse voltage of 6.0 V  VDET(S)  2.0 V or 0 V is applied to the SENSE pin to when VOUT reaches VDD / 2. The time period from when the pulse voltage of 0 V  VDET(S)  2.0 V or 6.0 V is applied to the SENSE pin to when VOUT reaches VDD / 2. 11 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Test Circuits R 100 k VDD VDD VDD VDD SENSE OUT  VSS V   V V Figure 7 Test Circuit 1 (Nch open-drain output product)  VDD VDD   V SENSE OUT A SENSE OUT P.G. Figure 10 R 470 k VSS Figure 11 Test Circuit 4 (Nch open-drain output product)  V VDD VDD  V SENSE OUT VSS Figure 13 12 Test Circuit 5  A VDS V Test Circuit 3 P.G. SENSE OUT Oscilloscope VSS Figure 12 Test Circuit 4 (CMOS output product) VDS  A VDD VDD Oscilloscope  SENSE OUT VSS Test Circuit 2 VDD VDD V VDD VSS Figure 9  VSS Figure 8 Test Circuit 1 (CMOS output product) A VDD SENSE OUT VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Standard Circuits 1. Nch open-drain output product R 100 k VDD SENSE OUT VSS Figure 14 2. CMOS output product VDD SENSE OUT VSS Figure 15 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 13 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Explanation of Terms 1. Detection voltage (VDET) The detection voltage is a voltage at which the output in Figure 18 or Figure 19 turns to "L". The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (VDET min.) and the maximum (VDET max.) is called the detection voltage range (Refer to Figure 16). Example: In the S-1002Cx18, the detection voltage is either one in the range of 1.778 V  VDET  1.822 V. This means that some S-1002Cx18 have VDET = 1.778 V and some have VDET = 1.822 V. 2. Release voltage (VDET) The release voltage is a voltage at which the output in Figure 18 or Figure 19 turns to "H". The release voltage varies slightly among products of the same specification. The variation of release voltage between the specified minimum (VDET min.) and the maximum (VDET max.) is called the release voltage range (Refer to Figure 17). The range is calculated from the actual detection voltage (VDET) of a product and is in the range of VDET  1.03  VDET  VDET  1.07. Example: For the S-1002Cx18, the release voltage is either one in the range of 1.832 V  VDET  1.949 V. This means that some S-1002Cx18 have VDET = 1.832 V and some have VDET = 1.949 V. VSENSE Detection voltage VDET max. Detection voltage range VDET min. Release voltage VDET max. Release voltage range VDET min. VSENSE VOUT VOUT tRESET tDET Figure 16 Figure 17 R 100 k VDD VDD  V Figure 18 14 Detection Voltage VDD VDD SENSE OUT VSS   V Test Circuit of Detection Voltage and Release Voltage (Nch open-drain output product) Release Voltage V Figure 19 SENSE OUT VSS  V Test Circuit of Detection Voltage and Release Voltage (CMOS output product) VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 3. Hysteresis width (VHYS) The hysteresis width is the voltage difference between the detection voltage and the release voltage (the voltage at point B  the voltage at point A = VHYS in "Figure 22 Timing Chart of S-1002 Series NA / NB Type" and "Figure 24 Timing Chart of S-1002 Series CA / CB Type"). Setting the hysteresis width between the detection voltage and the release voltage, prevents malfunction caused by noise on the input voltage. 4. Feed-through current The feed-through current is a current that flows instantaneously to the VDD pin at the time of detection and release of a voltage detector. The feed-through current is large in CMOS output product, small in Nch open-drain output product. 5. Oscillation In applications where an input resistor is connected (Figure 20), taking a CMOS output (active "L") product for example, the feed-through current which is generated when the output goes from "L" to "H" (at the time of release) causes a voltage drop equal to [feed-through current]  [input resistance]. Since the VDD pin and the SENSE pin are shorted as in Figure 20, the SENSE pin voltage drops at the time of release. Then the SENSE pin voltage drops below the detection voltage and the output goes from "H" to "L". In this status, the feed-through current stops and its resultant voltage drop disappears, and the output goes from "L" to "H". The feed-through current is then generated again, a voltage drop appears, and repeating the process finally induces oscillation. VDD RA VIN VDD SENSE VSS RB OUT (CMOS output product) GND Figure 20 Example for Bad Implementation Due to Detection Voltage Change 15 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Operation 1. Basic operation 1. 1 S-1002 Series NA / NB type (1) When the power supply voltage (VDD) is the minimum operation voltage or higher, and the SENSE pin voltage (VSENSE) is the release voltage (VDET) or higher, the Nch transistor is turned off to output VDD ("H") when the output is pulled up. Since the Nch transistor (N1) is turned off, the input voltage to the comparator is (RB  RC )  VSENSE . RA  RB  RC (2) Even if VSENSE decreases to VDET or lower, VDD is output when VSENSE is higher than the detection voltage (VDET). When VSENSE decreases to VDET or lower (point A in Figure 22), the Nch transistor is turned on. And then VSS ("L") is output from the OUT pin after the elapse of the detection delay time (tDET). RB  VSENSE . At this time, N1 is turned on, and the input voltage to the comparator is RA  RB (3) Even if VSENSE further decreases to the IC's minimum operation voltage or lower, the output from the OUT pin is stable when VDD is minimum operation voltage or higher. (4) Even if VSENSE exceeds VDET, VSS is output when VSENSE is lower than VDET. (5) When VSENSE increases to VDET or higher (point B in Figure 22), the Nch transistor is turned off. And then VDD is output from the OUT pin after the elapse of the release delay time (tRESET) when the output is pulled up. SENSE VDD R 100 k RA VDD   *1 *1 VSENSE RB *1 VREF N1 Nch RC VSS *1. OUT Parasitic diode Figure 21 Operation of S-1002 Series NA / NB Type (1) (2) (3) (4) (5) B Hysteresis width A (VHYS) Release voltage (VDET) Detection voltage (VDET) VSENSE Minimum operation voltage VSS VDD Output from OUT pin VSS tDET Figure 22 16 tRESET Timing Chart of S-1002 Series NA / NB Type  V VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 1. 2 S-1002 Series CA / CB type (1) When the power supply voltage (VDD) is the minimum operation voltage or higher, and the SENSE pin voltage (VSENSE) is the release voltage (VDET) or higher, the Nch transistor is turned off and the Pch transistor is turned on to output VDD ("H"). Since the Nch transistor (N1) is turned off, the input voltage to the comparator is (RB  RC )  VSENSE . RA  RB  RC (2) Even if VSENSE decreases to VDET or lower, VDD is output when VSENSE is higher than the detection voltage (VDET). When VSENSE decreases to VDET or lower (point A in Figure 24), the Nch transistor is turned on and the Pch transistor is turned off. And then VSS ("L") is output from the OUT pin after the elapse of the detection delay time (tDET). RB  VSENSE . At this time, N1 is turned on, and the input voltage to the comparator is RA  RB (3) Even if VSENSE further decreases to the IC's minimum operation voltage or lower, the output from the OUT pin is stable when VDD is minimum operation voltage or higher. (4) Even if VSENSE exceeds VDET, VSS is output when VSENSE is lower than VDET. (5) When VSENSE increases to VDET or higher (point B in Figure 24), the Nch transistor is turned off and the Pch transistor is turned on. And then VDD is output from the OUT pin after the elapse of the release delay time (tRESET). SENSE VDD Pch RA *1 VDD   *1 *1 VSENSE RB *1 VREF N1 Nch  V RC VSS *1. OUT Parasitic diode Figure 23 Operation of S-1002 Series CA / CB Type (1) (2) (3) (4) (5) B Hysteresis width A (VHYS) Release voltage (VDET) Detection voltage (VDET) VSENSE Minimum operation voltage VSS VDD Output from OUT pin VSS tDET Figure 24 tRESET Timing Chart of S-1002 Series CA / CB Type 17 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series 2. Rev.1.1_03 SENSE pin 2. 1 Error when detection voltage is set externally By connecting a node that was resistance-divided by the resistor (RA) and the resistor (RB) to the SENSE pin as seen in Figure 25, the detection voltage can be set externally. For conventional products without the SENSE pin, RA cannot be too large since the resistance-divided node must be connected to the VDD pin. This is because a feed-through current will flow through the VDD pin when it goes from detection to release, and if RA is large, problems such as oscillation or larger error in the hysteresis width may occur. In the S-1002 Series, RA and RB are easily made larger since the resistance-divided node can be connected to the SENSE pin through which no feed-through current flows. However, be careful of error in the current flowing through the internal resistance (RSENSE) that will occur. Although RSENSE in the S-1002 Series is large (5 M min.) to make the error small, RA and RB should be selected such that the error is within the allowable limits. 2. 2 Selection of RA and RB In Figure 25, the relation between the external setting detection voltage (VDX) and the actual detection voltage (VDET) is ideally calculated by the equation below. VDX = VDET  (1  RA RB ) ··· (1) However, in reality there is an error in the current flowing through RSENSE. When considering this error, the relation between VDX and VDET is calculated as follows. RA RB || RSENSE ) RA  = VDET  1  RB  RSENSE   RB  RSENSE   RA RA = VDET  (1  R )  R  VDET B SENSE VDX = VDET  (1  ··· (2) RA . By using equations (1) and (2), the error is calculated as VDET  R SENSE The error rate is calculated as follows by dividing the error by the right-hand side of equation (1). RA  RB RA || RB  100 [%] = R  100 [%] RSENSE  (RA  RB) SENSE ··· (3) As seen in equation (3), the smaller the resistance values of RA and RB compared to RSENSE, the smaller the error rate becomes. Also, the relation between the external setting hysteresis width (VHX) and the hysteresis width (VHYS) is calculated by equation below. Error due to RSENSE also occurs to the relation in a similar way to the detection voltage. VHX = VHYS  (1  RA RB ) ··· (4) RA VDX VDET VDD SENSE OUT RSENSE RB Figure 25 Caution 18 VSS Detection Voltage External Setting Circuit If RA and RB are large, the SENSE pin input impedance becomes higher and may cause a malfunction due to noise. In this case, connect a capacitor between the SENSE pin and the VSS pin. VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 2. 3 Power on sequence Apply power in the order, the VDD pin then the SENSE pin. As seen in Figure 26, when VSENSE  VDET, the OUT pin output (VOUT) rises and the S-1002 Series becomes the release status (normal operation). VDD VDET VSENSE tRESET VOUT Figure 26 Caution 2. 4 If power is applied in the order the SENSE pin then the VDD pin, an erroneous release may occur even if VSENSE  VDET. Precautions when shorting between the VDD pin and the SENSE pin 2. 4. 1 Input resistor Do not connect the input resistor (RA) when shorting between the VDD pin and the SENSE pin. A feed-through current flows through the VDD pin at the time of release. When connecting the circuit shown as Figure 27, the feed-through current of the VDD pin flowing through RA will cause a drop in VSENSE at the time of release. At that time, oscillation may occur if VSENSE  VDET. RA VDD OUT SENSE VDD VSS Figure 27 2. 4. 2 Parasitic resistance and parasitic capacitance Due to the difference in parasitic resistance and parasitic capacitance of the VDD pin and the SENSE pin, power may be applied to the SENSE pin first. Note that an erroneous release may occur if this happens (refer to "2. 3 Power on sequence"). Caution In CMOS output product, make sure that the VDD pin input impedance does not become too high, regardless of the above. Since a feed-through current is large, a malfunction may occur if the VDD pin voltage changes greatly at the time of release. 19 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series 2. 5 Rev.1.1_03 Malfunction when VDD falls As seen in Figure 28, note that if the VDD pin voltage (VDD) drops steeply below 1.2 V when VDET  VSENSE  VDET, erroneous detection may occur. When VDD_Low  1.2 V, erroneous detection does not occur. When VDD_Low  1.2 V, the more the VDD falling amplitude increases or the shorter the falling time becomes, the easier the erroneous detection. Perform thorough evaluation in actual application. VDD_High VDD VDD_Low (Voltage drops below 1.2 V.) VDET VSENSE VDET VOUT falling influenced by VDD falling (erroneous detection) VOUT Figure 28 The S-1002Cx50 example in Figure 29 shows an example of erroneous detection boundary conditions. 12 VDD_High [V] 10 8 Danger of erroneous detection 6 4 2 0 0.1 1 10 tF [s] 100 1000 Figure 29 Remark Test conditions Product name: VSENSE: VDD_High: VDD_Low: VDD: t F: S-1002Cx50 VDET(S)  0.1 V VDD pin voltage before falling VDD pin voltage after falling (0.95 V) VDD_High  VDD_Low Falling time of VDD from VDD_High  VDD  10% to VDD_Low  VDD  10% VDD_High VDD_High  VDD  10% VDD VDD_Low  VDD  10% VDD_Low tF Figure 30 20 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 3. Other characteristics 3. 1 Temperature characteristics of detection voltage The shaded area in Figure 31 shows the temperature characteristics of detection voltage in the operation temperature range. VDET [V] 0.945 mV/°C VDET25*1 0.945 mV/°C 40 *1. Figure 31 3. 2 25 85 Ta [°C] VDET25 is a detection voltage value at Ta = 25°C. Temperature Characteristics of Detection Voltage (Example for VDET = 2.7 V) Temperature characteristics of release voltage The temperature change VDET of the release voltage is calculated by using the temperature change Ta VDET of the detection voltage as follows: Ta VDET VDET VDET =  Ta VDET Ta The temperature change of the release voltage and the detection voltage has the same sign consequently. 3. 3 Temperature characteristics of hysteresis voltage The temperature change of the hysteresis voltage is expressed as VDET VDET  and is calculated as Ta Ta follows: VDET VDET VHYS VDET  =  Ta Ta VDET Ta 21 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Precautions  Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.  In CMOS output product of the S-1002 Series, the feed-through current flows at the time of detection and release. If the VDD pin input impedance is high, malfunction may occur due to the voltage drop by the feed-through current when releasing.  In CMOS output product, oscillation may occur if a pull-down resistor is connected and falling speed of the SENSE pin voltage (VSENSE) is slow near the detection voltage when the VDD pin and the SENSE pin are shorted.  When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics of the external parts should be taken into consideration. ABLIC Inc. shall not bear any responsibility for patent infringements related to products using the circuits described herein.  ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 22 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Characteristics (Typical Data) Detection voltage (VDET), Release voltage (VDET) vs. Temperature (Ta) VDD = 5.0 V VDET, VDET [V] S-1002Cx10 1.2 1.1 VDET 1.0 VDET 0.9 0.8 40 25 25 Ta [C] VDET, VDET [V] 50 VDET 2.4 VDET 2.3 75 85 40 25 0 25 Ta [C] 50 75 85 VDD = 5.0 V VDET 5.2 5.0 VDET 4.8 4.6 40 25 0 25 Ta [C] 50 75 85 Hysteresis width (VHYS) vs. Temperature (Ta) S-1002Cx10 7.0 VDD = 5.0 V S-1002Cx24 7.0 5.0 4.0 3.0 VDD = 5.0 V 6.0 VHYS [%] 6.0 VHYS [%] VDD = 5.0 V 2.5 2.2 0 S-1002Cx50 5.4 2. S-1002Cx24 2.6 VDET, VDET [V] 1. 40 25 5.0 4.0 3.0 0 25 Ta [C] S-1002Cx50 7.0 50 75 85 40 25 0 25 Ta [C] 50 75 85 VDD = 5.0 V VHYS [%] 6.0 5.0 4.0 3.0 40 25 0 25 Ta [C] 50 75 85 23 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series 3. Rev.1.1_03 Detection voltage (VDET) vs. Power supply voltage (VDD) S-1002Cx24 2.430 1.020 2.420 Ta = 25C 1.010 VDET [V] VDET [V] S-1002Cx10 1.030 1.000 0.990 Ta = 40C 0.980 Ta = 85C Ta = 25C 2.410 2.400 2.390 2.380 0.970 Ta = 40C Ta = 85C 2.370 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 VDET [V] S-1002Cx50 5.050 5.025 5.000 Ta = 25C Ta = 40C Ta = 85C 4.975 4.950 0.0 4. 2.0 4.0 6.0 VDD [V] 8.0 10.0 Hysteresis width (VHYS) vs. Power supply voltage (VDD) S-1002Cx24 7.0 S-1002Cx10 7.0 5.0 Ta = 25C 4.0 Ta = 85C 3.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1002Cx50 7.0 Ta = 40C 6.0 VHYS [%] 5.0 Ta = 25C 4.0 Ta = 85C 3.0 0.0 5.0 Ta = 25C 4.0 Ta = 85C 3.0 0.0 24 Ta = 40C 6.0 Ta = 40C VHYS [%] VHYS [%] 6.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 5. Current consumption (ISS) vs. Power supply voltage (VDD) S-1002Cx10 Ta = 25°C, VSENSE = VDET(S)  0.1 V (during detection) 1.00 S-1002Cx10 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 1.00 0.80 ISS [A] ISS [A] 0.80 0.60 0.40 0.20 0.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1002Cx24 Ta = 25°C, VSENSE = VDET(S)  0.1 V (during detection) 1.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1002Cx24 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 1.00 0.80 ISS [A] 0.80 ISS [A] 0.40 0.20 0.00 0.60 0.40 0.20 0.60 0.40 0.20 0.00 0.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1002Cx50 Ta = 25°C, VSENSE = VDET(S)  0.1 V (during detection) 1.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 S-1002Cx50 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 1.00 0.80 ISS [A] 0.80 ISS [A] 0.60 0.60 0.40 0.20 0.60 0.40 0.20 0.00 0.00 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 25 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series 6. Rev.1.1_03 Current consumption (ISS) vs. SENSE pin input voltage (VSENSE) S-1002Cx10 Ta = 25°C, VDD = VDET(S)  1.0 V, VSENSE = 0.0 V  10.0 V 1.00 S-1002Cx24 Ta = 25°C, VDD = VDET(S)  1.0 V, VSENSE = 0.0 V  10.0 V 1.00 0.80 ISS [A] ISS [A] 0.80 0.60 0.40 0.20 0.60 0.40 0.20 0.00 0.00 0.0 2.0 4.0 6.0 VSENSE [V] 8.0 10.0 0.0 2.0 4.0 6.0 VSENSE [V] 8.0 10.0 S-1002Cx50 Ta = 25°C, VDD = VDET(S)  1.0 V, VSENSE = 0.0 V  10.0 V 1.00 ISS [A] 0.80 0.60 0.40 0.20 0.00 0.0 7. 2.0 4.0 6.0 VSENSE [V] 8.0 10.0 Current consumption (ISS) vs. Temperature (Ta) 0.25 0.25 0.20 0.20 0.15 0.10 0.05 0.00 40 25 ISS [µA] 0.10 0.00 0 25 Ta [C] 50 75 85 0.25 0.20 0.15 0.10 0.05 0.00 0.15 0.05 S-1002Cx50 VDD = VDET(S)  1.0 V, VSENSE = VDET(S)  1.0 V (during release) 0.30 26 S-1002Cx24 VDD = VDET(S)  1.0 V, VSENSE = VDET(S)  1.0 V (during release) 0.30 ISS [A] ISS [A] S-1002Cx10 VDD = VDET(S)  1.0 V, VSENSE = VDET(S)  1.0 V (during release) 0.30 −40 −25 0 25 Ta [°C] 50 75 85 40 25 0 25 Ta [C] 50 75 85 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 Nch transistor output current (IOUT) vs. VDS S-1002Nx12 VDD = 6.0 V VDD = 3.6 V 10.0 VDD = 2.4 V 5.0 VDD = 1.2 V VDD = 0.95 V 0.0 1.0 2.0 3.0 4.0 VDS [V] 5.0 6.0 Nch transistor output current (IOUT) vs. Power supply voltage (VDD) S-1002Nx12 4.0 IOUT [mA] S-1002Cx12 Ta = 25°C, VSENSE = VDET(S)  1.0 V (during release) 40.0 VDD = 8.4 V V DD = 0.95 V 30.0 VDD = 1.2 V VDD = 7.2 V 20.0 VDD = 6.0 V VDD = 4.8 V 10.0 VDD = 3.6 V VDD = 2.4 V 0.0 2.0 4.0 6.0 8.0 0.0 10.0 VDS [V] VDD = 4.8 V 15.0 0.0 10. Ta = 25°C, VSENSE = 0.0 V (during detection) 11. VDS = 0.5 V, VSENSE = 0.0 V (during detection) Ta = 40C 3.0 2.0 Ta = 85C 1.0 Ta = 25C 3.0 2.0 Ta = 25C 1.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 Ta = 85C 0.0 10.0 0.0 2.0 4.0 6.0 VDD [V] 8.0 10.0 Minimum operation voltage (VOUT) vs. Power supply voltage (VDD) S-1002Nx10 VSENSE = VDD, Pull-up to 10 V, Pull-up resistance: 100 k 12.0 10.0 VOUT [V] VOUT [V] S-1002Nx10 VSENSE = VDD, Pull-up to VDD, Pull-up resistance: 100 k 1.8 1.6 1.4 1.2 1.0 Ta = 40C 0.8 0.6 Ta = 25C 0.4 Ta = 85C 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDD [V] 8.0 6.0 4.0 Ta = 40C Ta = 25C Ta = 85C 2.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VDD [V] Minimum operation voltage (VOUT) vs. SENSE pin input voltage (VSENSE) VOUT [V] S-1002Nx10 VDD = 0.95 V, Pull-up to VDD, Pull-up resistance: 100 k 1.8 1.6 1.4 1.2 1.0 Ta = 40C 0.8 0.6 Ta = 25C Ta = 85C 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSENSE [V] Remark S-1002Nx10 VDD = 0.95 V, Pull-up to 10 V, Pull-up resistance: 100 k 12.0 10.0 VOUT [V] 13. Pch transistor output current (IOUT) vs. Power supply voltage (VDD) S-1002Cx12 VDS = 0.5 V, VSENSE = VDET(S)  1.0 V (during release) 5.0 Ta = 40C 4.0 0.0 12. Pch transistor output current (IOUT) vs. VDS IOUT [mA] IOUT [mA] 20.0 9. IOUT [mA] 8. 8.0 6.0 4.0 Ta = 40C Ta = 85C Ta = 25C 2.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSENSE [V] VDS: Drain-to-source voltage of the output transistor 27 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Dynamic response vs. Output pin capacitance (COUT) Response time [ms] 1 0.1 0.01 0.001 0.00001 tPHL tPLH 0.001 0.01 0.0001 Output pin capacitance [F] Response time [ms] 1 0.01 0.001 0.00001 Response time [ms] S-1002Nx10 100 10 Response time [ms] 100 10 0.001 0.01 0.0001 Output pin capacitance [F] 0.01 0.00001 0.01 tPHL 0.001 0.00001 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 0.1 Ta = 25°C, VDD = VDET(S)  1.0 V tPLH tPHL 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 Ta = 25°C, VDD = VDET(S)  1.0 V tPLH 1 0.1 tPLH tPHL 0.1 0.01 0.00001 0.1 tPLH 1 S-1002Nx50 28 0.1 1 Ta = 25°C, VDD = VDET(S)  1.0 V Ta = 25°C, VDD = VDET(S)  1.0 V S-1002Cx50 0.1 S-1002Cx24 Response time [ms] Ta = 25°C, VDD = VDET(S)  1.0 V S-1002Cx10 tPHL 0.001 0.01 0.0001 Output pin capacitance [F] S-1002Nx24 Response time [ms] 14. Rev.1.1_03 0.1 100 10 Ta = 25°C, VDD = VDET(S)  1.0 V tPLH 1 0.1 0.01 0.00001 tPHL 0.001 0.01 0.0001 Output pin capacitance [F] 0.1 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 1 s 1 s VIH*1 SENSE pin voltage VIL*2 tPHL tPLH VDD VDD  90% Output voltage VDD  10% *1. *2. VIH = 10 V VIL = 0.95 V Figure 32 VDD VDD SENSE OUT P.G. R 100 k VDD VDD Oscilloscope VSS Figure 33 Caution Test Condition of Response Time Test Circuit of Response Time (Nch open-drain output product) P.G. Figure 34 SENSE OUT Oscilloscope VSS Test Circuit of Response Time (CMOS output product) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 29 VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03  Application Circuit Examples 1. Microcomputer reset circuits In microcomputers, when the power supply voltage is lower than the minimum operation voltage, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to the normal level, the microcomputer needs to be initialized. Otherwise, the microcomputer may malfunction after that. Reset circuits to protect microcomputer in the event of current being momentarily switched off or lowered. Using the S-1002 Series which has the low minimum operation voltage, the high-accuracy detection voltage and the hysteresis width, reset circuits can be easily constructed as seen in Figure 35 and Figure 36. VDD VDD1 VDD SENSE OUT VSS VDD VDD1 VDD SENSE OUT VSS Microcomputer Microcomputer GND Figure 35 Caution 30 Example of Reset Circuit (Nch open-drain output product) GND Figure 36 Example of Reset Circuit (CMOS output product) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. VOLTAGE DETECTOR WITH SENSE PIN S-1002 Series Rev.1.1_03 2. Change of detection voltage If there is not a product with a specified detection voltage value in the S-1002 Series, the detection voltage can be changed by using a resistance divider or a diode, as seen in Figure 37 to Figure 40. In Figure 37 and Figure 38, hysteresis width also changes. VDD VDD R RA VIN VDD RA 100 k VIN SENSE OUT VSS VDD SENSE OUT VSS RB RB GND GND Figure 37 Remark Detection voltage change when using a resistance divider (Nch open-drain output product) Figure 38 Detection voltage change when using a resistance divider (CMOS output product) RA  RB  VDET RB RA  RB Hysteresis width =  VHYS RB Detection voltage = VDD VDD Vf1 Vf1 R VIN VDD 100 k VIN SENSE OUT SENSE OUT VSS GND VDD VSS GND Figure 39 Remark Caution 1. 2. Detection voltage change when using a diode (Nch open-drain output product) Figure 40 Detection voltage change when using a diode (CMOS output product) Detection voltage = Vf1  (VDET) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. Set the constants referring to "2. 1 Error when detection voltage is set externally" in " Operation". 31 2.9±0.2 1.9±0.2 4 5 1 2 +0.1 0.16 -0.06 3 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.3 TITLE SOT235-A-PKG Dimensions No. MP005-A-P-SD-1.3 ANGLE UNIT mm ABLIC Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 +0.2 ø1.0 -0 2.0±0.05 0.25±0.1 4.0±0.1 1.4±0.2 3.2±0.2 3 2 1 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE SOT235-A-Carrier Tape No. MP005-A-C-SD-2.1 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP005-A-R-SD-1.1 SOT235-A-Reel TITLE No. MP005-A-R-SD-1.1 ANGLE QTY. UNIT mm ABLIC Inc. 3,000 2.0±0.2 1.3±0.2 4 3 0.05 0.3 +0.1 -0.05 +0.1 0.16 -0.06 2 1 +0.1 0.4 -0.05 No. NP004-A-P-SD-2.0 TITLE SC82AB-A-PKG Dimensions NP004-A-P-SD-2.0 No. ANGLE UNIT mm ABLIC Inc. +0.1 ø1.5 -0 4.0±0.1 2.0±0.05 1.1±0.1 4.0±0.1 0.2±0.05 ø1.05±0.1 (0.7) 2.2±0.2 2 1 3 4 Feed direction No. NP004-A-C-SD-3.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-SD-3.0 ANGLE UNIT mm ABLIC Inc. 4.0±0.1 2.0±0.1 ø1.5 1.1±0.1 +0.1 -0 4.0±0.1 0.2±0.05 ø1.05±0.1 2.3±0.15 2 1 3 4 Feed direction No. NP004-A-C-S1-2.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-S1-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. NP004-A-R-SD-1.1 TITLE SC82AB-A-Reel No. NP004-A-R-SD-1.1 QTY. ANGLE UNIT mm ABLIC Inc. 3,000 Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described herein. 4. Be careful to use the products within their ranges described herein. 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