BSH205G2AR

BSH205G2A 20 V, P-channel Trench MOSFET 13 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V ID drain current - - -2.6 A - 97 118 mΩ VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 SOT23 S 017aaa094 6. Ordering information Table 3. Ordering information Type number Package BSH205G2A Name Description Version SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code[1] BSH205G2A Q8% [1] % = placeholder for manufacturing site code BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 2 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -8 8 V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - -2.6 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.6 A - -10 A [2] - 610 mW [1] - 1.3 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 10 W Tj junction temperature Tsp = 25 °C -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C - -1.2 A - 5 mJ Source-drain diode IS source current Tamb = 25 °C [1] Avalanche ruggedness EDS(AL)S [1] [2] non-repetitive drainTj(init) = 25 °C; ID = -0.5 A; DUT in source avalanche energy avalanche (unclamped) 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-030119 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030120 120 25 125 Tamb (°C) Normalized total power dissipation as a function of ambient temperature BSH205G2A Product data sheet 0 -75 225 Fig. 2. 125 Tamb (°C) 225 Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 13 October 2020 25 © Nexperia B.V. 2020. All rights reserved 3 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET aaa-031476 -102 ID (A) -10 Limit RDSon = VDS/ID tp = 10 µs 100 µs -1 -10-1 -10-2 -10-3 -10-1 Fig. 3. 1 ms DC; Tsp = 25 °C 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 100 ms -1 -10 -102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 4 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions thermal resistance from junction to solder point Min Typ Max Unit [1] - 218 250 K/W [2] - 97 114 K/W - 10 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-031477 103 Zth(j-a) (K/W) duty cycle = 1 102 0.50 0.25 0.10 10 0.75 0.33 0.20 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-031478 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.25 0.75 0.33 0.20 0.10 10 0.05 0.02 0.01 1 10-3 10-2 0 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 5 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.4 -0.65 -0.9 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C - 97 118 mΩ VGS = -4.5 V; ID = -2.6 A; Tj = 175 °C - 153 186 mΩ VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 118 152 mΩ VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C - 145 240 mΩ VGS = -1.5 V; ID = -0.1 A; Tj = 25 °C - 170 400 mΩ gfs forward transconductance VDS = -10 V; ID = -2.6 A; Tj = 25 °C - 5 - S RG gate resistance f = 1 MHz - 8.3 - Ω VDS = -10 V; ID = -2.6 A; VGS = -4.5 V; Tj = 25 °C - 4.6 7 nC - 0.6 - nC - 1.2 - nC - 421 - pF - 38 - pF - 32 - pF - 5 - ns - 13 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 35 - ns tf fall time - 12 - ns VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; ID = -2.6 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = -1.2 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V trr reverse recovery time - 7 - ns Qr recovered charge IS = -1.1 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = -10 V; Tj = 25 °C - 1 - nC BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 6 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET aaa-031479 -10 VGS = -4.5 V ID (A) -3.0 V -8 aaa-031480 -10-3 -2.5 V ID (A) -2.2 V -10-4 -6 -1.8 V -4 Fig. 6. typ max -1.5 V -2 0 min -10-5 -1.2 V 0 -1 -2 -3 -10-6 -4 VDS (V) 0 -0.5 -1.0 VGS (V) -1.5 Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-031481 0.5 RDSon RDSon ( ) VGS = -1.2 V 0.4 aaa-031482 0.4 -1.5 V 0.3 -1.8 V 0.3 -2.2 V 0.2 0.2 -2.5 V 0.1 0.1 Tj = 25 °C -3.0 V 0 0 -2 -4 -6 -4.5 V -8 ID (A) 0 -10 Tj = 25 °C Fig. 8. Tj = 175 °C Product data sheet -2 -4 -6 VGS (V) -8 ID = -2.6 A Drain-source on-state resistance as a function of drain current; typical values BSH205G2A 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 7 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET aaa-031483 -10 aaa-031484 2.0 ID (A) a -8 1.5 -6 1.0 -4 Tj = 175 °C 0.5 -2 0 Tj = 25 °C 0 -0.5 -1.0 -1.5 0 -60 -2.0 -2.5 VGS (V) 0 60 120 Tj (°C) 180 VDS = -5 V Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-031485 -1.5 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-031486 103 VGS(th) (V) Ciss C (pF) -1.0 max 102 typ -0.5 Coss Crss min 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -0.25 mA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature BSH205G2A -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 8 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET aaa-031487 -5 VGS (V) VDS -4 ID -3 VGS(pl) -2 VGS(th) VGS QGS2 -1 QGS1 0 0 2 4 QG (nC) QGS QGD QG(tot) aaa-030347 6 ID = -2.6 A; VDS = -10 V; Tj = 25 °C Fig. 15. Gate charge waveform definitions Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-031488 -4 IS (A) -3 Tj = 175 °C -2 Tj = 25 °C -1 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 9 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 10 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version References IEC SOT23 JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline SOT23 BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 11 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for SOT23 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for SOT23 BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 12 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BSH205G2A v.1 Product data sheet - - BSH205G2A Product data sheet 20201013 All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 13 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 14 / 15 BSH205G2A Nexperia 20 V, P-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 13 October 2020 BSH205G2A Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2020 © Nexperia B.V. 2020. All rights reserved 15 / 15