ESP32S3WROOM1
ESP32S3WROOM1U
Datasheet
2.4 GHz WiFi (802.11 b/g/n) and Bluetooth® 5 (LE) module
Built around ESP32S3 series of SoCs, Xtensa® dualcore 32bit LX7 microprocessor
Flash up to 16 MB, PSRAM up to 8 MB
36 GPIOs, rich set of peripherals
Onboard PCB antenna
ESP32S3WROOM1
ESP32S3WROOM1U
Version 1.1
Espressif Systems
Copyright © 2022
www.espressif.com
1 Module Overview
1 Module Overview
Note:
Check the link or the QR code to make sure that you use the latest version of this document:
https://www.espressif.com/documentation/esp32-s3-wroom-1_wroom-1u_datasheet_en.pdf
1.1 Features
LED PWM, USB 1.1 OTG, USB Serial/JTAG
CPU and OnChip Memory
controller, MCPWM, SDIO host, GDMA, TWAI®
• ESP32-S3 series of SoCs embedded, Xtensa®
controller (compatible with ISO 11898-1), ADC,
dual-core 32-bit LX7 microprocessor, up to 240
touch sensor, temperature sensor, timers and
MHz
watchdogs
• 384 KB ROM
Integrated Components on Module
• 512 KB SRAM
• 16 KB SRAM in RTC
• 40 MHz crystal oscillator
• Up to 8 MB PSRAM
• Up to 16 MB Quad SPI flash
WiFi
Antenna Options
• On-board PCB antenna (ESP32-S3-WROOM-1)
• 802.11 b/g/n
• External antenna via a connector
• Bit rate: 802.11n up to 150 Mbps
(ESP32-S3-WROOM-1U)
• A-MPDU and A-MSDU aggregation
Operating Conditions
• 0.4 µs guard interval support
• Operating voltage/Power supply: 3.0 ~ 3.6 V
• Center frequency range of operating channel:
2412 ~ 2484 MHz
• Operating ambient temperature:
– 65 °C version: –40 ~ 65 °C
Bluetooth
• Bluetooth LE: Bluetooth 5, Bluetooth mesh
– 85 °C version: –40 ~ 85 °C
• Speed: 125 Kbps, 500 Kbps, 1 Mbps, 2 Mbps
– 105 °C version: –40 ~ 105 °C
• Advertising extensions
Certification
• Multiple advertisement sets
• RF certification: See certificates for
• Channel selection algorithm #2
ESP32-S3-WROOM-1 and
• Internal co-existence mechanism between Wi-Fi
ESP32-S3-WROOM-1U
and Bluetooth to share the same antenna
• Green certification: RoHS/REACH
Peripherals
Test
• GPIO, SPI, LCD interface, Camera interface,
• HTOL/HTSL/uHAST/TCT/ESD
UART, I2C, I2S, remote control, pulse counter,
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1 Module Overview
1.2 Description
ESP32-S3-WROOM-1 and ESP32-S3-WROOM-1U are two powerful, generic Wi-Fi + Bluetooth LE MCU
modules that are built around the ESP32-S3 series of SoCs. On top of a rich set of peripherals, the acceleration
for neural network computing and signal processing workloads provided by the SoC make the modules an ideal
choice for a wide variety of application scenarios related to AI and Artificial Intelligence of Things (AIoT), such as
wake word detection, speech commands recognition, face detection and recognition, smart home, smart
appliances, smart control panel, smart speaker, etc.
ESP32-S3-WROOM-1 comes with a PCB antenna. ESP32-S3-WROOM-1U comes with an external antenna
connector. A wide selection of module variants are available for customers as shown in Table 1 and 2. Among
the module variants, those embed ESP32-S3R8 operate at –40 ~ 65 °C ambient temperature,
ESP32-S3-WROOM-1-H4 and ESP32-S3-WROOM-1U-H4 operate at –40 ~ 105 °C ambient temperature, and
other module variants operate at –40 ~ 85 °C ambient temperature. Please note that for R8 series modules
(8-line PSRAM embedded), if the PSRAM ECC function is enabled, the maximum ambient temperature can be
improved to 85 °C, while the usable size of PSRAM will be reduced by 1/16.
Table 1: ESP32S3WROOM1 Series Comparison1
Ambient Temp.3
Size4
(°C)
(mm)
Flash2
PSRAM
ESP32-S3-WROOM-1-N4
4 MB (Quad SPI)
-
–40 ~ 85
ESP32-S3-WROOM-1-N8
8 MB (Quad SPI)
-
–40 ~ 85
ESP32-S3-WROOM-1-N16
16 MB (Quad SPI)
-
–40 ~ 85
ESP32-S3-WROOM-1-H4
4 MB (Quad SPI)
-
–40 ~ 105
ESP32-S3-WROOM-1-N4R2
4 MB (Quad SPI)
2 MB (Quad SPI)
–40 ~ 85
ESP32-S3-WROOM-1-N8R2
8 MB (Quad SPI)
2 MB (Quad SPI)
–40 ~ 85
ESP32-S3-WROOM-1-N16R2
16 MB (Quad SPI)
2 MB (Quad SPI)
–40 ~ 85
ESP32-S3-WROOM-1-N4R8
4 MB (Quad SPI)
8 MB (Octal SPI)
–40 ~ 65
ESP32-S3-WROOM-1-N8R8
8 MB (Quad SPI)
8 MB (Octal SPI)
–40 ~ 65
ESP32-S3-WROOM-1-N16R8
16 MB (Quad SPI)
8 MB (Octal SPI)
–40 ~ 65
Ordering Code
1
18.0
x
25.5
x
3.1
This table shares the same notes presented in Table 2 below.
Table 2: ESP32S3WROOM1U Series Comparison
Ambient Temp.3
Size4
(°C)
(mm)
Flash2
PSRAM
ESP32-S3-WROOM-1U-N4
4 MB (Quad SPI)
-
–40 ~ 85
ESP32-S3-WROOM-1U-N8
8 MB (Quad SPI)
-
–40 ~ 85
ESP32-S3-WROOM-1U-N16
16 MB (Quad SPI)
-
–40 ~ 85
ESP32-S3-WROOM-1U-H4
4 MB (Quad SPI)
-
–40 ~ 105
ESP32-S3-WROOM-1U-N4R2
4 MB (Quad SPI)
2 MB (Quad SPI)
–40 ~ 85
ESP32-S3-WROOM-1U-N8R2
8 MB (Quad SPI)
2 MB (Quad SPI)
–40 ~ 85
ESP32-S3-WROOM-1U-N16R2
16 MB (Quad SPI)
2 MB (Quad SPI)
–40 ~ 85
ESP32-S3-WROOM-1U-N4R8
4 MB (Quad SPI)
8 MB (Octal SPI)
–40 ~ 65
ESP32-S3-WROOM-1U-N8R8
8 MB (Quad SPI)
8 MB (Octal SPI)
–40 ~ 65
ESP32-S3-WROOM-1U-N16R8
16 MB (Quad SPI)
8 MB (Octal SPI)
–40 ~ 65
Ordering Code
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18.0
x
19.2
x
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1 Module Overview
2
The modules use flash integrated in the chip’s package.
3
Ambient temperature specifies the recommended temperature range of the environment immediately
outside the Espressif module.
4
For details, refer to Section 7.1 Physical Dimensions.
At the core of the modules is an ESP32-S3 series of SoC *, an Xtensa® 32-bit LX7 CPU that operates at up to
240 MHz. You can power off the CPU and make use of the low-power co-processor to constantly monitor the
peripherals for changes or crossing of thresholds.
ESP32-S3 integrates a rich set of peripherals including SPI, LCD, Camera interface, UART, I2C, I2S, remote
control, pulse counter, LED PWM, USB Serial/JTAG controller, MCPWM, SDIO host, GDMA, TWAI® controller
(compatible with ISO 11898-1), ADC, touch sensor, temperature sensor, timers and watchdogs, as well as up to
45 GPIOs. It also includes a full-speed USB 1.1 On-The-Go (OTG) interface to enable USB
communication.
Note:
* For more information on ESP32-S3 series of SoCs, please refer to ESP32-S3 Series Datasheet.
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1.3 Applications
• Generic Low-power IoT Sensor Hub
• Smart Building
• Generic Low-power IoT Data Loggers
• Industrial Automation
• Cameras for Video Streaming
• Smart Agriculture
• Over-the-top (OTT) Devices
• Audio Applications
• USB Devices
• Health Care Applications
• Speech Recognition
• Wi-Fi-enabled Toys
• Image Recognition
• Mesh Network
• Wearable Electronics
• Home Automation
• Retail & Catering Applications
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Contents
Contents
1
Module Overview
2
1.1
Features
2
1.2
Description
3
1.3
Applications
5
2
Block Diagram
8
3
Pin Definitions
9
3.1
Pin Layout
9
3.2
Pin Description
10
3.3
Strapping Pins
11
4
Electrical Characteristics
14
4.1
Absolute Maximum Ratings
14
4.2
Recommended Operating Conditions
14
4.3
DC Characteristics (3.3 V, 25 °C)
14
4.4
Current Consumption Characteristics
15
4.5
Wi-Fi RF Characteristics
15
4.5.1
Wi-Fi RF Standards
16
4.5.2
Wi-Fi RF Transmitter (TX) Specifications
16
4.5.3
Wi-Fi RF Receiver (RX) Specifications
17
4.6
Bluetooth LE Radio
18
4.6.1
Bluetooth LE RF Transmitter (TX) Specifications
18
4.6.2
Bluetooth LE RF Receiver (RX) Specifications
20
5
Module Schematics
23
6
Peripheral Schematics
25
7
Physical Dimensions and PCB Land Pattern
26
7.1
Physical Dimensions
26
7.2
Recommended PCB Land Pattern
27
7.3
Dimensions of External Antenna Connector
29
8
Product Handling
30
8.1
Storage Conditions
30
8.2
Electrostatic Discharge (ESD)
30
8.3
Reflow Profile
30
8.4
Ultrasonic Vibration
31
9
Related Documentation and Resources
32
Revision History
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List of Tables and Figures
List of Tables
1
ESP32-S3-WROOM-1 Series Comparison
3
2
ESP32-S3-WROOM-1U Series Comparison
3
3
Pin Definitions
10
4
JTAG Signal Source Selection
12
5
Strapping Pins
12
6
The Default Value for VDD_SPI Voltage
13
7
Parameter Descriptions of Setup and Hold Times for the Strapping Pin
13
8
Absolute Maximum Ratings
14
9
Recommended Operating Conditions
14
10
DC Characteristics (3.3 V, 25 °C)
14
11
Current Consumption Depending on RF Modes
15
12
Current Consumption Depending on Work Modes
15
13
Wi-Fi RF Standards
16
14
TX Power with Spectral Mask and EVM Meeting 802.11 Standards
16
15
TX EVM Test
16
16
RX Sensitivity
17
17
Maximum RX Level
18
18
RX Adjacent Channel Rejection
18
19
Bluetooth LE Frequency
18
20
Transmitter Characteristics - Bluetooth LE 1 Mbps
18
21
Transmitter Characteristics - Bluetooth LE 2 Mbps
19
22
Transmitter Characteristics - Bluetooth LE 125 Kbps
19
23
Transmitter Characteristics - Bluetooth LE 500 Kbps
20
24
Receiver Characteristics - Bluetooth LE 1 Mbps
20
25
Receiver Characteristics - Bluetooth LE 2 Mbps
21
26
Receiver Characteristics - Bluetooth LE 125 Kbps
21
27
Receiver Characteristics - Bluetooth LE 500 Kbps
22
List of Figures
1
ESP32-S3-WROOM-1 Block Diagram
8
2
ESP32-S3-WROOM-1U Block Diagram
8
3
Pin Layout (Top View)
9
4
Setup and Hold Times for the Strapping Pin
13
5
ESP32-S3-WROOM-1 Schematics
23
6
ESP32-S3-WROOM-1U Schematics
24
7
Peripheral Schematics
25
8
ESP32-S3-WROOM-1 Physical Dimensions
26
9
ESP32-S3-WROOM-1U Physical Dimensions
26
10
ESP32-S3-WROOM-1 Recommended PCB Land Pattern
27
11
ESP32-S3-WROOM-1U Recommended PCB Land Pattern
28
12
Dimensions of External Antenna Connector
29
13
Reflow Profile
30
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2 Block Diagram
2 Block Diagram
ESP32-S3-WROOM-1
40 MHz
Crystal
3V3
Antenna
ESP32-S3
ESP32-S3R2
ESP32-S3R8
EN
RF Matching
GPIOs
SPICS0
SPICLK
SPID
SPIQ
SPIHD
SPIWP
VDD_SPI
PSRAM(opt.)
(QSPI/OSPI)
QSPI Flash
Figure 1: ESP32S3WROOM1 Block Diagram
ESP32-S3-WROOM-1U
40 MHz
Crystal
3V3
EN
Antenna
ESP32-S3
ESP32-S3R2
ESP32-S3R8
RF Matching
GPIOs
SPICS0
SPICLK
SPID
SPIQ
SPIHD
SPIWP
VDD_SPI
PSRAM(opt.)
(QSPI/OSPI)
QSPI Flash
Figure 2: ESP32S3WROOM1U Block Diagram
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3 Pin Definitions
3 Pin Definitions
3.1 Pin Layout
The pin diagram below shows the approximate location of pins on the module. For the actual diagram drawn to
scale, please refer to Figure 7.1 Physical Dimensions.
The pin diagram is applicable for ESP32-S3-WROOM-1 and ESP32-S3-WROOM-1U, but the latter has no
keepout zone.
Keepout Zone
GND
35
IO42
IO7
7
GND
41
GND
GND
34
IO41
IO15
8
GND
GND
GND
33
IO40
IO16
9
32
IO39
IO17
10
31
IO38
IO18
11
30
IO37
IO8
12
29
IO36
IO19
13
28
IO35
IO20
14
27
IO0
26
GND
IO45
GND
25
6
IO48
IO6
24
RXD0
IO47
36
23
5
IO21
IO5
22
TXD0
IO14
37
21
4
IO13
IO4
20
IO2
IO12
38
19
3
IO11
EN
18
IO1
IO10
39
17
2
IO9
3V3
16
GND
IO46
40
15
1
IO3
GND
Figure 3: Pin Layout (Top View)
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3.2 Pin Description
The module has 41 pins. See pin definitions in Table 3.
For explanations of pin names and function names, as well as configurations of peripheral pins, please refer to
ESP32-S3 Series Datasheet.
Table 3: Pin Definitions
Type a Function
Name
No.
GND
1
P
GND
3V3
2
P
Power supply
High: on, enables the chip.
EN
3
I
Low: off, the chip powers off.
Note: Do not leave the EN pin floating.
IO4
4
I/O/T
RTC_GPIO4, GPIO4, TOUCH4, ADC1_CH3
IO5
5
I/O/T
RTC_GPIO5, GPIO5, TOUCH5, ADC1_CH4
IO6
6
I/O/T
RTC_GPIO6, GPIO6, TOUCH6, ADC1_CH5
IO7
7
I/O/T
RTC_GPIO7, GPIO7, TOUCH7, ADC1_CH6
IO15
8
I/O/T
RTC_GPIO15, GPIO15, U0RTS, ADC2_CH4, XTAL_32K_P
IO16
9
I/O/T
RTC_GPIO16, GPIO16, U0CTS, ADC2_CH5, XTAL_32K_N
IO17
10
I/O/T
RTC_GPIO17, GPIO17, U1TXD, ADC2_CH6
IO18
11
I/O/T
RTC_GPIO18, GPIO18, U1RXD, ADC2_CH7, CLK_OUT3
IO8
12
I/O/T
RTC_GPIO8, GPIO8, TOUCH8, ADC1_CH7, SUBSPICS1
IO19
13
I/O/T
RTC_GPIO19, GPIO19, U1RTS, ADC2_CH8, CLK_OUT2, USB_D
IO20
14
I/O/T
RTC_GPIO20, GPIO20, U1CTS, ADC2_CH9, CLK_OUT1, USB_D+
IO3
15
I/O/T
RTC_GPIO3, GPIO3, TOUCH3, ADC1_CH2
IO46
16
I/O/T
GPIO46
IO9
17
I/O/T
RTC_GPIO9, GPIO9, TOUCH9, ADC1_CH8, FSPIHD, SUBSPIHD
IO10
18
I/O/T
IO11
19
I/O/T
IO12
20
I/O/T
IO13
21
I/O/T
IO14
22
I/O/T
IO21
23
I/O/T
RTC_GPIO21, GPIO21
IO47
24
I/O/T
SPICLK_P_DIFF,GPIO47, SUBSPICLK_P_DIFF
IO48
25
I/O/T
SPICLK_N_DIFF,GPIO48, SUBSPICLK_N_DIFF
IO45
26
I/O/T
GPIO45
RTC_GPIO10, GPIO10, TOUCH10, ADC1_CH9, FSPICS0, FSPIIO4,
SUBSPICS0
RTC_GPIO11, GPIO11, TOUCH11, ADC2_CH0, FSPID, FSPIIO5,
SUBSPID
RTC_GPIO12, GPIO12, TOUCH12, ADC2_CH1, FSPICLK, FSPIIO6,
SUBSPICLK
RTC_GPIO13, GPIO13, TOUCH13, ADC2_CH2, FSPIQ, FSPIIO7,
SUBSPIQ
RTC_GPIO14, GPIO14, TOUCH14, ADC2_CH3, FSPIWP, FSPIDQS,
SUBSPIWP
27
I/O/T
RTC_GPIO0, GPIO0
IO35
b
28
I/O/T
SPIIO6, GPIO35, FSPID, SUBSPID
IO36
b
29
I/O/T
SPIIO7, GPIO36, FSPICLK, SUBSPICLK
IO0
Cont’d on next page
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3 Pin Definitions
Table 3 – cont’d from previous page
Name
a
No.
Type
30
I/O/T
SPIDQS, GPIO37, FSPIQ, SUBSPIQ
IO38
31
I/O/T
GPIO38, FSPIWP, SUBSPIWP
IO39
32
I/O/T
MTCK, GPIO39, CLK_OUT3, SUBSPICS1
IO40
33
I/O/T
MTDO, GPIO40, CLK_OUT2
IO41
34
I/O/T
MTDI, GPIO41, CLK_OUT1
IO42
35
I/O/T
MTMS, GPIO42
RXD0
36
I/O/T
U0RXD, GPIO44, CLK_OUT2
TXD0
37
I/O/T
U0TXD, GPIO43, CLK_OUT1
IO2
38
I/O/T
RTC_GPIO2, GPIO2, TOUCH2, ADC1_CH1
IO1
39
I/O/T
RTC_GPIO1, GPIO1, TOUCH1, ADC1_CH0
GND
40
P
GND
EPAD
41
P
GND
IO37
a
b
Function
P: power supply; I: input; O: output; T: high impedance. Pin functions in bold font are the default
pin functions. For pin 28 ∼ 30, the default function is decided by eFuse bit.
b
In module variants that have embedded OSPI PSRAM, i.e., that embed ESP32-S3R8, pins IO35,
IO36, and IO37 connect to the OSPI PSRAM and are not available for other uses.
3.3 Strapping Pins
Note:
The content below is excerpted from Section Strapping Pins in ESP32-S3 Series Datasheet. For the strapping pin mapping between the chip and modules, please refer to Chapter 5 Module Schematics.
ESP32-S3 has four strapping pins:
• GPIO0
• GPIO45
• GPIO46
• GPIO3
Software can read the values of corresponding bits from register “GPIO_STRAPPING”.
During the chip’s system reset (power-on-reset, RTC watchdog reset, brownout reset, analog super watchdog
reset, and crystal clock glitch detection reset), the latches of the strapping pins sample the voltage level as
strapping bits of “0” or “1”, and hold these bits until the chip is powered down or shut down.
GPIO0, GPIO45 and GPIO46 are connected to the chip’s internal weak pull-up/pull-down during the chip reset.
Consequently, if they are unconnected or the connected external circuit is high-impedance, the internal weak
pull-up/pull-down will determine the default input level of these strapping pins.
GPIO3 is floating by default. Its strapping value can be configured to determine the source of the JTAG signal
inside the CPU, as shown in Table 5. In this case, the strapping value is controlled by the external circuit that
cannot be in a high impedance state. Table 4 shows more configuration combinations of
EFUSE_DIS_USB_JTAG, EFUSE_DIS_PAD_JTAG, and EFUSE_STRAP_JTAG_SEL that determine the JTAG
signal source.
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3 Pin Definitions
Table 4: JTAG Signal Source Selection
EFUSE_STRAP_JTAG_SEL
EFUSE_DIS_USB_JTAG
EFUSE_DIS_PAD_JTAG
JTAG Signal Source
1
0
0
Refer to Table 5
0
0
0
USB Serial/JTAG controller
don’t care
0
1
USB Serial/JTAG controller
don’t care
1
0
On-chip JTAG pins
don’t care
1
1
N/A
To change the strapping bit values, users can apply the external pull-down/pull-up resistances, or use the host
MCU’s GPIOs to control the voltage level of these pins when powering on ESP32-S3.
After reset, the strapping pins work as normal-function pins.
Refer to Table 5 for a detailed configuration of the strapping pins.
Table 5: Strapping Pins
VDD_SPI Voltage
Pin
Default
3.3 V
GPIO45
Pull-down
0
1.8 V
1
Booting Mode
1
Pin
Default
SPI Boot
Download Boot
GPIO0
Pull-up
1
0
GPIO46
Pull-down
Don’t care
0
Enabling/Disabling ROM Messages Print During Booting 2
Pin
Default
Enabled
Disabled
GPIO46
Pull-down
See the 2nd note
See the 2nd note
JTAG Signal Selection
Pin
Default
GPIO3
N/A
EFUSE_DIS_USB_JTAG = 0, EFUSE_DIS_PAD_JTAG = 0,
EFUSE_STRAP_JTAG_SEL=1
0: JTAG signal from on-chip JTAG pins
1: JTAG signal from USB Serial/JTAG controller
Note:
1. The strapping combination of GPIO46 = 1 and GPIO0 = 0 is invalid and will trigger unexpected behavior.
2. By default, the ROM boot messages are printed over UART0 (U0TXD pin) and USB Serial/JTAG controller together.
The ROM code printing can be disabled through configuration register and eFuse. For detailed information, please
refer to Chapter Chip Boot Control in ESP32-S3 Technical Reference Manual.
VDD_SPI voltage is determined either by the strapping value of GPIO45 or by EFUSE_VDD_SPI_TIEH. When
EFUSE_VDD_SPI_FORCE is 0, VDD_SPI voltage is determined by the strapping value of GPIO45; when
EFUSE_VDD_SPI_FORCE is 1, VDD_SPI voltage is determined by EFUSE_VDD_SPI_TIEH. Please refer to the
following table for default configurations:
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3 Pin Definitions
Table 6: The Default Value for VDD_SPI Voltage
Chip Variant
EFUSE_VDD_SPI_FORCE
EFUSE_VDD_SPI_TIEH
VDD_SPI Voltage
ESP32-S3
0
0
Determined by GPIO45
ESP32-S3R2
1
1
Force to 3.3 V
ESP32-S3R8
1
1
Force to 3.3 V
ESP32-S3R8V
1
0
Force to 1.8 V
ESP32-S3FN8
1
1
Force to 3.3 V
ESP32-S3FH4R2
1
1
Force to 3.3 V
Figure 4 shows the setup and hold times for the strapping pin before and after the CHIP_PU signal goes high.
Details about the parameters are listed in Table 7.
tSU
CHIP_PU
tHD
VIL_nRST
VIH
Strapping pin
Figure 4: Setup and Hold Times for the Strapping Pin
Table 7: Parameter Descriptions of Setup and Hold Times for the Strapping Pin
Parameter
Description
tSU
Setup time before CHIP_PU goes from low to high
0
tHD
Hold time after CHIP_PU goes high
3
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4 Electrical Characteristics
4 Electrical Characteristics
4.1 Absolute Maximum Ratings
Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
Table 8: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
VDD33
Power supply voltage
–0.3
3.6
V
TST ORE
Storage temperature
–40
105
°C
4.2 Recommended Operating Conditions
Table 9: Recommended Operating Conditions
Symbol
Parameter
Min
Typ
Max
VDD33
IV DD
Power supply voltage
3.0
3.3
3.6
V
Current delivered by external power supply
0.5
—
—
A
65 °C version
TA
Operating ambient temperature
Unit
65
85 °C version
–40
—
105 °C version
85
°C
105
4.3 DC Characteristics (3.3 V, 25 °C)
Table 10: DC Characteristics (3.3 V, 25 °C)
Symbol
Parameter
CIN
Pin capacitance
VIH
Min
—
High-level input voltage
0.75 × VDD
1
Typ
Max
Unit
2
—
pF
—
1
VDD + 0.3
V
1
VIL
Low-level input voltage
–0.3
—
0.25 × VDD
IIH
High-level input current
—
—
50
nA
Low-level input current
—
—
50
nA
—
—
IIL
VOH
VOL
2
2
High-level output voltage
0.8 × VDD
Low-level output voltage
1
V
V
1
—
—
0.1 × VDD
V
—
40
—
mA
—
28
—
mA
1
IOH
IOL
High-level source current (VDD = 3.3 V, VOH >=
2.64 V, PAD_DRIVER = 3)
Low-level sink current (VDD1 = 3.3 V, VOL =
0.495 V, PAD_DRIVER = 3)
RP U
Internal weak pull-up resistor
—
45
—
kΩ
RP D
Internal weak pull-down resistor
—
45
—
kΩ
Cont’d on next page
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4 Electrical Characteristics
Table 10 – cont’d from previous page
Symbol
VIH_nRST
VIL_nRST
Parameter
Chip reset release voltage (EN voltage is within
the specified range)
Min
Typ
Max
Unit
0.75 × VDD1
—
VDD1+ 0.3
V
–0.3
—
0.25 × VDD1
V
Chip reset voltage (EN voltage is within the
specified range)
1
VDD is the I/O voltage for pins of a particular power domain.
2
VOH and VOL are measured using high-impedance load.
4.4 Current Consumption Characteristics
With the use of advanced power-management technologies, the module can switch between different power
modes. For details on different power modes, please refer to Section Low Power Management
in ESP32-S3 Series Datasheet.
Table 11: Current Consumption Depending on RF Modes
Work mode
Description
TX
Active (RF working)
RX
1
Peak (mA)
802.11b, 1 Mbps, @20.5 dBm
355
802.11g, 54 Mbps, @18 dBm
297
802.11n, HT20, MCS 7, @17.5 dBm
286
802.11n, HT40, MCS 7, @17 dBm
285
802.11b/g/n, HT20
95
802.11n, HT40
97
The current consumption measurements are taken with a 3.3 V supply at 25 °C of ambient
temperature at the RF port. All transmitters’ measurements are based on a 100% duty cycle.
2
The current consumption figures for in RX mode are for cases when the peripherals are disabled and the CPU idle.
Note that the data in Table 12 only applies to the module variants that embed the chip variant ESP32-S3.
Table 12: Current Consumption Depending on Work Modes
Work mode
Light-sleep
Deep-sleep
Power off
1
Typ2
Description
—
—
1
Unit
µA
RTC memory and RTC peripherals are powered on.
8
µA
RTC memory is powered on. RTC peripherals are powered off.
7
µA
CHIP_PU is set to low level. The chip is powered off.
1
µA
Please refer to the current consumption of the chip, and add corresponding PSRAM consumption
values, e.g., 140 µA for 8 MB 8-line PSRAM (3.3 V), 200 µA for 8 MB 8-line PSRAM (1.8 V) and
40 µA for 2 MB 4-line PSRAM (3.3 V).
2
Please refer to ESP32-S3 Series Datasheet if there are any inconsistencies.
4.5 WiFi RF Characteristics
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4 Electrical Characteristics
4.5.1 WiFi RF Standards
Table 13: WiFi RF Standards
Name
Description
Center frequency range of operating channel 1
2412 ~ 2484 MHz
Wi-Fi wireless standard
IEEE 802.11b/g/n
11b: 1, 2, 5.5 and 11 Mbps
20 MHz
Data rate
11n: MCS0-7, 72.2 Mbps (Max)
40 MHz
11n: MCS0-7, 150 Mbps (Max)
PCB antenna, external antenna via the connector 2
Antenna type
1
11g: 6, 9, 12, 18, 24, 36, 48, 54 Mbps
Device should operate in the center frequency range allocated by regional regulatory authorities. Target
center frequency range is configurable by software.
2
For the modules that use external antennas, the output impedance is 50 Ω. For other modules without
external antennas, the output impedance is irrelevant.
4.5.2 WiFi RF Transmitter (TX) Specifications
Target TX power is configurable based on device or certification requirements. The default characteristics are
provided in Table 14.
Table 14: TX Power with Spectral Mask and EVM Meeting 802.11 Standards
Min
Typ
Max
(dBm)
(dBm)
(dBm)
802.11b, 1 Mbps
—
20.5
—
802.11b, 11 Mbps
—
20.5
—
802.11g, 6 Mbps
—
20.0
—
802.11g, 54 Mbps
—
18.0
—
802.11n, HT20, MCS 0
—
19.0
—
802.11n, HT20, MCS 7
—
17.5
—
802.11n, HT40, MCS 0
—
18.5
—
802.11n, HT40, MCS 7
—
17.0
—
Rate
Table 15: TX EVM Test
Rate
Min
Typ
SL1
(dB)
(dB)
(dB)
802.11b, 1 Mbps, @20.5 dBm
—
–24.5
–10
802.11b, 11 Mbps, @20.5 dBm
—
–24.5
–10
802.11g, 6 Mbps, @20 dBm
—
–23.0
–5
802.11g, 54 Mbps, @18 dBm
—
–29.5
–25
802.11n, HT20, MCS 0, @19 dBm
—
–24.0
–5
802.11n, HT20, MCS 7, @17.5 dBm
—
–30.5
–27
Cont’d on next page
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4 Electrical Characteristics
Table 15 – cont’d from previous page
Rate
Min
Typ
SL1
(dB)
(dB)
(dB)
802.11n, HT40, MCS 0, @18.5 dBm
—
–25.0
–5
802.11n, HT40, MCS 7, @17 dBm
—
–30.0
–27
1
SL stands for standard limit value.
4.5.3 WiFi RF Receiver (RX) Specifications
Table 16: RX Sensitivity
Min
Typ
Max
(dBm)
(dBm)
(dBm)
802.11b, 1 Mbps
—
–98.2
—
802.11b, 2 Mbps
—
–95.6
—
802.11b, 5.5 Mbps
—
–92.8
—
802.11b, 11 Mbps
—
–88.5
—
802.11g, 6 Mbps
—
–93.0
—
802.11g, 9 Mbps
—
–92.0
—
802.11g, 12 Mbps
—
–90.8
—
802.11g, 18 Mbps
—
–88.5
—
802.11g, 24 Mbps
—
–85.5
—
802.11g, 36 Mbps
—
–82.2
—
802.11g, 48 Mbps
—
–78.0
—
802.11g, 54 Mbps
—
–76.2
—
802.11n, HT20, MCS 0
—
–93.0
—
802.11n, HT20, MCS 1
—
–90.6
—
802.11n, HT20, MCS 2
—
–88.4
—
802.11n, HT20, MCS 3
—
–84.8
—
802.11n, HT20, MCS 4
—
–81.6
—
802.11n, HT20, MCS 5
—
–77.4
—
802.11n, HT20, MCS 6
—
–75.6
—
802.11n, HT20, MCS 7
—
–74.2
—
802.11n, HT40, MCS 0
—
–90.0
—
802.11n, HT40, MCS 1
—
–87.5
—
802.11n, HT40, MCS 2
—
–85.0
—
802.11n, HT40, MCS 3
—
–82.0
—
802.11n, HT40, MCS 4
—
–78.5
—
802.11n, HT40, MCS 5
—
–74.4
—
802.11n, HT40, MCS 6
—
–72.5
—
802.11n, HT40, MCS 7
—
–71.2
—
Rate
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4 Electrical Characteristics
Table 17: Maximum RX Level
Min
Typ
Max
(dBm)
(dBm)
(dBm)
802.11b, 1 Mbps
—
5
—
802.11b, 11 Mbps
—
5
—
802.11g, 6 Mbps
—
5
—
802.11g, 54 Mbps
—
0
—
802.11n, HT20, MCS 0
—
5
—
802.11n, HT20, MCS 7
—
0
—
802.11n, HT40, MCS 0
—
5
—
802.11n, HT40, MCS 7
—
0
—
Rate
Table 18: RX Adjacent Channel Rejection
Rate
Min
Typ
Max
(dB)
(dB)
(dB)
802.11b, 1 Mbps
—
35
—
802.11b, 11 Mbps
—
35
—
802.11g, 6 Mbps
—
31
—
802.11g, 54 Mbps
—
14
—
802.11n, HT20, MCS 0
—
31
—
802.11n, HT20, MCS 7
—
13
—
802.11n, HT40, MCS 0
—
19
—
802.11n, HT40, MCS 7
—
8
—
4.6 Bluetooth LE Radio
Table 19: Bluetooth LE Frequency
Parameter
Center frequency of operating channel
Min
Typ
Max
(MHz)
(MHz)
(MHz)
2402
—
2480
4.6.1 Bluetooth LE RF Transmitter (TX) Specifications
Table 20: Transmitter Characteristics Bluetooth LE 1 Mbps
Parameter
RF transmit power
Carrier frequency offset and drift
Description
Min
RF power control range
Typ
Max
Unit
–25.00
0
20.00
dBm
Gain control step
—
3.00
—
dB
Max |fn |n=0, 1, 2, ..k
—
2.50
—
kHz
Max |f0 − fn |
—
2.00
—
kHz
Max |fn − fn−5 |
—
1.40
—
kHz
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Table 20 – cont’d from previous page
Parameter
Description
Modulation characteristics
In-band spurious emissions
Min
Typ
Max
Unit
|f1 − f0 |
—
1.00
—
kHz
∆ f 1avg
—
249.00
—
kHz
—
198.00
—
kHz
∆ f 2avg /∆ f 1avg
—
0.86
—
—
±2 MHz offset
—
–37.00
—
dBm
±3 MHz offset
—
–42.00
—
dBm
>±3 MHz offset
—
–44.00
—
dBm
Min ∆ f 2max (for at least
99.9% of all ∆ f 2max )
Table 21: Transmitter Characteristics Bluetooth LE 2 Mbps
Parameter
Description
Min
RF power control range
RF transmit power
Carrier frequency offset and drift
Modulation characteristics
In-band spurious emissions
Typ
Max
Unit
–25.00
0
20.00
Gain control step
—
3.00
—
dB
Max |fn |n=0, 1, 2, ..k
—
2.50
—
kHz
Max |f0 − fn |
—
2.00
—
kHz
Max |fn − fn−5 |
—
1.40
—
kHz
|f1 − f0 |
—
1.00
—
kHz
∆ f 1avg
—
499.00
—
kHz
—
416.00
—
kHz
∆ f 2avg /∆ f 1avg
—
0.89
—
—
±4 MHz offset
—
–42.00
—
dBm
±5 MHz offset
—
–44.00
—
dBm
>±5 MHz offset
—
–47.00
—
dBm
Min ∆ f 2max (for at least
99.9% of all ∆ f 2max )
dBm
Table 22: Transmitter Characteristics Bluetooth LE 125 Kbps
Parameter
RF transmit power
Carrier frequency offset and drift
Modulation characteristics
Description
Min
RF power control range
Espressif Systems
Max
Unit
–25.00
0
20.00
Gain control step
—
3.00
—
dB
Max |fn |n=0, 1, 2, ..k
—
0.80
—
kHz
Max |f0 − fn |
—
1.00
—
kHz
|fn − fn−3 |
—
0.30
—
kHz
|f0 − f3 |
—
1.00
—
kHz
∆ f 1avg
—
248.00
—
kHz
—
222.00
—
kHz
±2 MHz offset
—
–37.00
—
dBm
±3 MHz offset
—
–42.00
—
dBm
>±3 MHz offset
—
–44.00
—
dBm
Min ∆ f 1max (for at least
99.9% of all∆ f 1max )
In-band spurious emissions
Typ
19
dBm
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Table 23: Transmitter Characteristics Bluetooth LE 500 Kbps
Parameter
Description
Min
RF power control range
RF transmit power
Carrier frequency offset and drift
Modulation characteristics
Max
Unit
–25.00
0
20.00
Gain control step
—
3.00
—
dB
Max |fn |n=0, 1, 2, ..k
—
0.80
—
kHz
Max |f0 − fn |
—
1.00
—
kHz
|fn − fn−3 |
—
0.85
—
kHz
|f0 − f3 |
—
0.34
—
kHz
∆ f 2avg
—
213.00
—
kHz
—
196.00
—
kHz
±2 MHz offset
—
–37.00
—
dBm
±3 MHz offset
—
–42.00
—
dBm
>±3 MHz offset
—
–44.00
—
dBm
Min ∆ f 2max (for at least
99.9% of all ∆ f 2max )
In-band spurious emissions
Typ
dBm
4.6.2 Bluetooth LE RF Receiver (RX) Specifications
Table 24: Receiver Characteristics Bluetooth LE 1 Mbps
Parameter
Description
Sensitivity @30.8% PER
—
—
–96.5
—
dBm
Maximum received signal @30.8% PER
—
—
8
—
dBm
Co-channel C/I
F = F0 MHz
—
8
—
dB
F = F0 + 1 MHz
—
4
—
dB
F = F0 – 1 MHz
—
4
—
dB
F = F0 + 2 MHz
—
–23
—
dB
F = F0 – 2 MHz
—
–23
—
dB
F = F0 + 3 MHz
—
–34
—
dB
F = F0 – 3 MHz
—
–34
—
dB
F > F0 + 3 MHz
—
–36
—
dB
F > F0 – 3 MHz
—
–37
—
dB
—
—
–36
—
dB
F = Fimage + 1 MHz
—
–39
—
dB
F = Fimage – 1 MHz
—
–34
—
dB
30 MHz ~ 2000 MHz
—
–12
—
dBm
2003 MHz ~ 2399 MHz
—
–18
—
dBm
2484 MHz ~ 2997 MHz
—
–16
—
dBm
3000 MHz ~ 12.75 GHz
—
–10
—
dBm
—
—
–29
—
dBm
Adjacent channel selectivity C/I
Image frequency
Adjacent channel to image frequency
Out-of-band blocking performance
Intermodulation
Espressif Systems
20
Min
Typ
Max
Unit
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Table 25: Receiver Characteristics Bluetooth LE 2 Mbps
Parameter
Description
Sensitivity @30.8% PER
—
—
–92
—
dBm
Maximum received signal @30.8% PER
—
—
3
—
dBm
Co-channel C/I
F = F0 MHz
—
8
—
dB
F = F0 + 2 MHz
—
4
—
dB
F = F0 – 2 MHz
—
4
—
dB
F = F0 + 4 MHz
—
–27
—
dB
F = F0 – 4 MHz
—
–27
—
dB
F = F0 + 6 MHz
—
–38
—
dB
F = F0 – 6 MHz
—
–38
—
dB
F > F0 + 6 MHz
—
–41
—
dB
F > F0 – 6 MHz
—
–41
—
dB
—
—
–27
—
dB
F = Fimage + 2 MHz
—
–38
—
dB
F = Fimage – 2 MHz
—
4
—
dB
30 MHz ~ 2000 MHz
—
–15
—
dBm
2003 MHz ~ 2399 MHz
—
–21
—
dBm
2484 MHz ~ 2997 MHz
—
–21
—
dBm
3000 MHz ~ 12.75 GHz
—
–9
—
dBm
—
—
–29
—
dBm
Adjacent channel selectivity C/I
Image frequency
Adjacent channel to image frequency
Out-of-band blocking performance
Intermodulation
Min
Typ
Max
Unit
Table 26: Receiver Characteristics Bluetooth LE 125 Kbps
Parameter
Description
Sensitivity @30.8% PER
—
—
–103.5
—
dBm
Maximum received signal @30.8% PER
—
—
8
—
dBm
Co-channel C/I
F = F0 MHz
—
4
—
dB
F = F0 + 1 MHz
—
1
—
dB
F = F0 – 1 MHz
—
2
—
dB
F = F0 + 2 MHz
—
–26
—
dB
F = F0 – 2 MHz
—
–26
—
dB
F = F0 + 3 MHz
—
–36
—
dB
F = F0 – 3 MHz
—
–39
—
dB
F > F0 + 3 MHz
—
–42
—
dB
F > F0 – 3 MHz
—
–43
—
dB
—
—
–42
—
dB
F = Fimage + 1 MHz
—
–43
—
dB
F = Fimage – 1 MHz
—
–36
—
dB
Adjacent channel selectivity C/I
Image frequency
Adjacent channel to image frequency
Espressif Systems
21
Min
Typ
Max
Unit
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Table 27: Receiver Characteristics Bluetooth LE 500 Kbps
Parameter
Description
Sensitivity @30.8% PER
—
—
–100
—
dBm
Maximum received signal @30.8% PER
—
—
8
—
dBm
Co-channel C/I
F = F0 MHz
—
4
—
dB
F = F0 + 1 MHz
—
1
—
dB
F = F0 – 1 MHz
—
0
—
dB
F = F0 + 2 MHz
—
–24
—
dB
F = F0 – 2 MHz
—
–24
—
dB
F = F0 + 3 MHz
—
–37
—
dB
F = F0 – 3 MHz
—
–39
—
dB
F > F0 + 3 MHz
—
–38
—
dB
F > F0 – 3 MHz
—
–42
—
dB
—
—
–38
—
dB
F = Fimage + 1 MHz
—
–42
—
dB
F = Fimage – 1 MHz
—
–37
—
dB
Adjacent channel selectivity C/I
Image frequency
Adjacent channel to image frequency
Espressif Systems
22
Min
Typ
Max
Unit
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5 Module Schematics
This is the reference design of the module.
5
4
3
2
1
C4
D
TBD
VDD33
R1
10nF
GND
GPIO46
GPIO45
U0RXD
499 U0TXD
GPIO42
GPIO41
GPIO40
GPIO39
GPIO38
GND
CHIP_PU
GPIO4
GPIO5
GPIO6
GPIO7
GPIO15
GPIO16
GPIO17
GPIO18
GPIO8
GPIO19
GPIO20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
R4
GND
L1
GND
GND
2.0nH(0.1nH)
C10
C
GND
RF_ANT
1
2
L2
GND
TBD
L3
C11
C12
TBD
TBD
TBD
PCB_ANT
GND
GND
C5
TBD
B
GND
CHIP_PU
GPIO0
GPIO1
GPIO2
GPIO3
GPIO4
GPIO5
GPIO6
GPIO7
GPIO8
GPIO9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
LNA_IN
VDD3P3
VDD3P3
CHIP_PU
GPIO0
GPIO1
GPIO2
GPIO3
GPIO4
GPIO5
GPIO6
GPIO7
GPIO8
GPIO9
The values of L3, C5, C11, L2 and C12
vary with the actual PCB board.
NC: No component.
VDD33
VDD33
56
55
54
53
52
51
50
49
48
47
46
45
44
43
15
16
17
18
19
20
21
22
23
24
25
26
27
28
U1
GND
ESP32-S3
ESP32-S3R2
ESP32-S3R8
42
41
40
39
38
37
36
35
34
33
32
31
30
29
GPIO37
GPIO36
GPIO35
R16
R15
R10
0
0
0
R14
R13
0
0
ESP32-S3-WROOM-1(pin-out)
GPIO47
GPIO48
SPID
SPIQ
SPICLK
SPICS0
SPIWP
SPIHD
C13
C14 VDD_SPI
0.1uF
1uF
GND
C
15
16
17
18
19
20
21
22
23
24
25
26
0.1uF
GPIO37
GPIO36
GPIO35
GPIO34
GPIO33
SPICLK_P
SPICLK_N
SPID
SPIQ
SPICLK
SPICS0
SPIWP
SPIHD
VDD_SPI
GPIO1
GPIO2
U0TXD
U0RXD
GPIO42
GPIO41
GPIO40
GPIO39
GPIO38
GPIO37
GPIO36
GPIO35
GPIO0
VDD_SPI
SPICS0
1
SPICLK
6
SPIHD
7
/CS
DI
CLK
/HOLD
U2
GND
DO
/WP
5
SPID
2
SPIQ
3
SPIWP
B
FLASH-3V3
GND
GPIO15
GPIO16
GPIO17
GPIO18
GPIO19
GPIO20
GPIO21
C15
0.1uF
GPIO10
GPIO11
GPIO12
GPIO13
GPIO14
ESP32-S3-WROOM-1 & WROOM-1U Datasheet v1.1
GND
LNA_IN
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
8
GND
0.1uF
EPAD
GND
IO1
IO2
TXD0
RXD0
IO42
IO41
IO40
IO39
IO38
IO37
IO36
IO35
IO0
GND
3V3
EN
IO4
IO5
IO6
IO7
IO15
IO16
IO17
IO18
IO8
IO19
IO20
GPIO3
GPIO46
GPIO9
GPIO10
GPIO11
GPIO12
GPIO13
GPIO14
GPIO21
GPIO47
GPIO48
GPIO45
GND
ANT1
0.1uF
VDDA
VDDA
XTAL_P
XTAL_N
GPIO46
GPIO45
U0RXD
U0TXD
MTMS
MTDI
VDD3P3_CPU
MTDO
MTCK
GPIO38
1uF
C9
GPIO10
GPIO11
GPIO12
GPIO13
GPIO14
VDD3P3_RTC
XTAL_32K_P
XTAL_32K_N
GPIO17
GPIO18
GPIO19
GPIO20
GPIO21
SPICS1
10uF
C8
57
C7
GND
C6
ESP32-S3-WROOM-1
IO3
IO46
IO9
IO10
IO11
IO12
IO13
IO14
IO21
IO47
IO48
IO45
1uF
0
C2
VDD33
23
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R3
C3
D1
ESD
10K(NC)
GND
40MHz(±10ppm)
The value of R4 varies with the actual
PCB board.
VDD33 GND
U3
The values of C1 and C4 vary with
the selection of the crystal.
VDD33
VDD33
2
XIN
1
TBD
VDD
C1
D
GND
GND
GND
Y1
4
4
GND
3
GND
GND XOUT
Espressif Systems
5 Module Schematics
GND
A
A
Figure 5: ESP32S3WROOM1 Schematics
Title
Size
A4
Date:
5
4
3
2
Page Name
Rev
V1.3
Friday, March 04, 2022
Sheet
Confidential and Proprietary
2
1
of
2
5
4
3
2
1
C4
D
VDD33
3
R1
1uF
10nF
GND
GND
L1
GND
2.0nH(0.1nH)
GND
C10
C
3
L2
GND
TBD
ANT1
C11
C12
CONN
TBD
TBD
GND
GND
GND
The values of C11, L2 and C12
vary with the actual PCB board.
NC: No component.
LNA_IN
CHIP_PU
GPIO0
GPIO1
GPIO2
GPIO3
GPIO4
GPIO5
GPIO6
GPIO7
GPIO8
GPIO9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
LNA_IN
VDD3P3
VDD3P3
CHIP_PU
GPIO0
GPIO1
GPIO2
GPIO3
GPIO4
GPIO5
GPIO6
GPIO7
GPIO8
GPIO9
56
55
54
53
52
51
50
49
48
47
46
45
44
43
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VDD33
ESP32-S3
ESP32-S3R2
ESP32-S3R8
GPIO37
GPIO36
GPIO35
R16
R15
R10
0
0
0
R14
R13
0
0
ESP32-S3-WROOM-1U(pin-out)
GPIO47
GPIO48
SPID
SPIQ
SPICLK
SPICS0
SPIWP
SPIHD
C13
C14 VDD_SPI
0.1uF
1uF
GND
C
15
16
17
18
19
20
21
22
23
24
25
26
GND
42
41
40
39
38
37
36
35
34
33
32
31
30
29
GPIO1
GPIO2
U0TXD
U0RXD
GPIO42
GPIO41
GPIO40
GPIO39
GPIO38
GPIO37
GPIO36
GPIO35
GPIO0
VDD_SPI
SPICS0
1
SPICLK
6
SPIHD
7
/CS
DI
CLK
/HOLD
U2
GND
DO
/WP
5
SPID
2
SPIQ
3
SPIWP
B
FLASH-3V3
GND
GPIO15
GPIO16
GPIO17
GPIO18
GPIO19
GPIO20
GPIO21
C15
0.1uF
GPIO10
GPIO11
GPIO12
GPIO13
GPIO14
ESP32-S3-WROOM-1 & WROOM-1U Datasheet v1.1
U1
VDD33
0.1uF
GPIO37
GPIO36
GPIO35
GPIO34
GPIO33
SPICLK_P
SPICLK_N
SPID
SPIQ
SPICLK
SPICS0
SPIWP
SPIHD
VDD_SPI
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
8
RF_ANT
1
2
GND
EPAD
GND
IO1
IO2
TXD0
RXD0
IO42
IO41
IO40
IO39
IO38
IO37
IO36
IO35
IO0
GND
3V3
EN
IO4
IO5
IO6
IO7
IO15
IO16
IO17
IO18
IO8
IO19
IO20
GPIO3
GPIO46
GPIO9
GPIO10
GPIO11
GPIO12
GPIO13
GPIO14
GPIO21
GPIO47
GPIO48
GPIO45
GND
0.1uF
VDDA
VDDA
XTAL_P
XTAL_N
GPIO46
GPIO45
U0RXD
U0TXD
MTMS
MTDI
VDD3P3_CPU
MTDO
MTCK
GPIO38
GND
0.1uF
GPIO10
GPIO11
GPIO12
GPIO13
GPIO14
VDD3P3_RTC
XTAL_32K_P
XTAL_32K_N
GPIO17
GPIO18
GPIO19
GPIO20
GPIO21
SPICS1
1uF
C9
24
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10uF
C8
57
C7
GND
C6
B
GPIO46
GPIO45
U0RXD
499 U0TXD
GPIO42
GPIO41
GPIO40
GPIO39
GPIO38
CHIP_PU
GPIO4
GPIO5
GPIO6
GPIO7
GPIO15
GPIO16
GPIO17
GPIO18
GPIO8
GPIO19
GPIO20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
R4
VDD33
GND
ESP32-S3-WROOM-1U
IO3
IO46
IO9
IO10
IO11
IO12
IO13
IO14
IO21
IO47
IO48
IO45
C2
0
R3
C3
D1
ESD
10K(NC)
GND
40MHz(±10ppm)
The value of R4 varies with the actual
PCB board.
VDD33 GND
U3
The values of C1 and C4 vary with
the selection of the crystal.
VDD33
VDD33
VDD
TBD
2
XIN
1
TBD
GND
C1
D
GND
4
GND
Y1
GND XOUT
4
GND
GND
A
A
Figure 6: ESP32S3WROOM1U Schematics
Title
Size
A4
Page Name
Rev
V1.4
Confidential and Proprietary
Internal pull-up resistor (R1) for IO45 is not populated in the module, as the flash in the module works at 3.3 VDate:
by default
(output
Please
make
sure IO45 is
Friday, March
04, 2022by VDD_SPI).
2
of
2
Sheet
5
4
not pulled high when the module is powered up by external circuit.
3
2
1
5 Module Schematics
Espressif Systems
GND
6 Peripheral Schematics
6 Peripheral Schematics
This is the typical application circuit of the module connected with peripheral components (for example, power
supply, antenna, reset button, JTAG interface, and UART interface).
VDD33
GND
GND
VDD33
JP1
0.1uF
GND
1
R2
NC
GND
2
GND
C4 12pF(NC)
X1
32.768KHz(NC)
GND
C7
JP3
1
2
1
2
USB OTG
12pF(NC)
EN
IO4
IO5
IO6
X1: ESR = Max. 70 KΩ IO7
IO15
R3
0(NC)
IO16
R5
0(NC)
IO17
IO18
IO8
IO19
IO20
C2
USB_DUSB_D+
C6
TBD
TBD
TBD
R6
R4
0
0
C5 NC: No component.
1
2
3
4
UART
JP2
GND
TMS
TDI
TDO
TCK
1
2
3
4
GND
1
2
3
4
JTAG
JP4
2
1
2
1
Boot Option
SW1
U1
R7
TBD
C8
GNDGND
1
2
3
4
IO1
IO2
RXD0
TXD0
IO42
IO41
IO40
IO39
IO38
IO37
IO36
IO35
IO0
IO3
IO46
IO9
IO10
IO11
IO12
IO13
IO14
IO21
IO47
IO48
IO45
22uF
GND
R1
15
16
17
18
19
20
21
22
23
24
25
26
C3
IO3
IO46
IO9
IO10
IO11
IO12
IO13
IO14
IO21
IO47
IO48
IO45
C1
ESP32-S3-WROOM-1/ESP32-S3-WROOM-1U
41
EPAD 40
1
GND 39
2 GND
IO1 38
3 3V3
IO2 37
4 EN
TXD0 36
5 IO4
RXD0 35
6 IO5
IO42 34
7 IO6
IO41 33
8 IO7
IO15
IO40 32
9
IO16
IO39 31
10
IO38 30
11 IO17
IO37 29
12 IO18
IO36 28
13 IO8
IO35 27
14 IO19
IO20
IO0
0 EN
0.1uF
GND
Figure 7: Peripheral Schematics
• Soldering the EPAD to the ground of the base board is not a must, however, it can optimize thermal
performance. If you choose to solder it, please apply the correct amount of soldering paste.
• To ensure that the power supply to the ESP32-S3 chip is stable during power-up, it is advised to add an
RC delay circuit at the EN pin. The recommended setting for the RC delay circuit is usually R = 10 kΩ and
C = 1 µF. However, specific parameters should be adjusted based on the power-up timing of the module
and the power-up and reset sequence timing of the chip. For ESP32-S3’s power-up and reset sequence
timing diagram, please refer to Section Power Scheme in ESP32-S3 Series Datasheet.
5
4
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2
7 Physical Dimensions and PCB Land Pattern
ESP32-S3-WROOM-1 Dimensions
7 Physical Dimensions and PCB Land Pattern
Unit: mm
ESP32-S3-WROOM-1 Dimensions
7.1 Physical Dimensions
18±0.15
3.1±0.15
0.8
6
Unit: mm
3.1±0.15
0.8
0.9
0.5
15.8
Top View
13.97
40 x 0.45
3.7
0.9
10.29
3.7
7.5
3.7
40 x 0.9
1
1.05
Ø
0.
5
13.97
40 x 0.45
17.6
1.27
40 x Ø0.55
0.9
0.5
2.015
1.27 3.7
40 x 0.85
7.5
0.9
10.29
1.05
15.8
40 x 0.9
17.6
Ø
0.
5
40 x Ø0.55
1.5
25.5±0.15
16.51
1.5
40 x 0.9
25.5±0.15
16.51 6
40 x 0.9
1.27
18±0.15
Bottom View
Side View
1.27 2.015
40 x 0.85
1
Top View
Side View
ESP32-S3-WROOM-1U Dimensions
Bottom View
Figure 8: ESP32S3WROOM1 Physical Dimensions
ESP32-S3-WROOM-1U Dimensions
Unit: mm
18±0.15
3.2±0.15
0.8
3
Unit: mm
2.46
3
40 x Ø0.55
3.2±0.15
0.8
3.7
13.97
1.08
40 x 0.45 Figure
Note:
Top View
0.9
2.015
1.27 3.7
40 x 0.85
7.5
10.29
40 x 0.9
0.
5
Top View
1.1
13.1
17.5
15.65
13.97
1.08
40 x 0.45
7.5
3.7
0.9
40 x Ø0.55
0.9
0.5
10.29
40 x 0.9
1.1
2.46
13.1
Ø
0.
5
10.75
17.5
15.65
Ø
19.2±0.15
19.2±0.15
16.51
16.51
40 x 0.9
1.5
40 x1.5
0.9
1.27
1.27
18±0.15
3.7
0.9
0.5
10.75
Bottom View
Side View
9: ESP32S3WROOM1U Physical Dimensions
1.27 2.015
40 x 0.85
Bottom View
Side View
For information about tape, reel, and product marking, please refer to Espressif Module Package Information.
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7 Physical Dimensions and PCB Land Pattern
7.2 Recommended PCB Land Pattern
Unit: mm
Via for thermal pad
Copper
Antenna Area
40 x1.5
40
25.5
0.9
0.5
7.50
1.27
10.29
1.5
0.5
3.7
0.9
3.7
40 x0.9
1
16.51
6
7.49
18
15
26
0.5
1.27
2.015 2.015
17.5
Figure 10: ESP32S3WROOM1 Recommended PCB Land Pattern
Espressif Systems
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7 Physical Dimensions and PCB Land Pattern
Unit: mm
Via for thermal pad
Copper
18
40 x1.5
40
1.19
15
0.5
1.27
19.2
10.29
7.5
0.90
3.7
40 x0.9
0.9
0.5
3.7
1.5
0.5
16.51
1
26
1.27
2.015 2.015
17.5
Figure 11: ESP32S3WROOM1U Recommended PCB Land Pattern
Espressif Systems
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7 Physical Dimensions and PCB Land Pattern
7.3 Dimensions of External Antenna Connector
ESP32-S3-WROOM-1U uses the first generation external antenna connector as shown in Figure 12. This
connector is compatible with the following connectors:
• U.FL Series connector from Hirose
• MHF I connector from I-PEX
• AMC connector from Amphenol
Unit: mm
Figure 12: Dimensions of External Antenna Connector
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8 Product Handling
8 Product Handling
8.1 Storage Conditions
The products sealed in moisture barrier bags (MBB) should be stored in a non-condensing atmospheric
environment of < 40 °C and /90%RH. The module is rated at the moisture sensitivity level (MSL) of 3.
After unpacking, the module must be soldered within 168 hours with the factory conditions 25±5 °C and
/60%RH. If the above conditions are not met, the module needs to be baked.
8.2 Electrostatic Discharge (ESD)
• Human body model (HBM): ±2000 V
• Charged-device model (CDM): ±500 V
8.3 Reflow Profile
Temperature (℃)
Solder the module in a single reflow.
Peak Temp.
235 ~ 250 ℃
250
Preheating zone
150 ~ 200 ℃
60 ~ 120 s
217
200
Reflow zone
217 ℃ 60 ~ 90 s
Cooling zone
–1 ~ –5 ℃/s
Soldering time
> 30 s
Ramp-up zone
1 ~ 3 ℃/s
100
50
25
Time (sec.)
0
0
50
100
150
200
250
Ramp-up zone — Temp.: 25 ~ 150 ℃ Time: 60 ~ 90 s Ramp-up rate: 1 ~ 3 ℃/s
Preheating zone — Temp.: 150 ~ 200 ℃ Time: 60 ~ 120 s
Reflow zone — Temp.: >217 ℃
60 ~ 90 s; Peak Temp.: 235 ~ 250 ℃ Time: 30 ~ 70 s
Cooling zone — Peak Temp. ~ 180 ℃ Ramp-down rate: –1 ~ –5 ℃/s
Solder — Sn-Ag-Cu (SAC305) lead-free solder alloy
Figure 13: Reflow Profile
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8 Product Handling
8.4 Ultrasonic Vibration
Avoid exposing Espressif modules to vibration from ultrasonic equipment, such as ultrasonic welders or
ultrasonic cleaners. This vibration may induce resonance in the in-module crystal and lead to its malfunction or
even failure. As a consequence, the module may stop working or its performance may deteriorate.
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9 Related Documentation and Resources
9 Related Documentation and Resources
Related Documentation
• ESP32-S3 Series Datasheet – Specifications of the ESP32-S3 hardware.
• ESP32-S3 Technical Reference Manual – Detailed information on how to use the ESP32-S3 memory and peripherals.
• ESP32-S3 Hardware Design Guidelines – Guidelines on how to integrate the ESP32-S3 into your hardware product.
• Certificates
https://espressif.com/en/support/documents/certificates
• Documentation Updates and Update Notification Subscription
https://espressif.com/en/support/download/documents
Developer Zone
• ESP-IDF Programming Guide for ESP32-S3 – Extensive documentation for the ESP-IDF development framework.
• ESP-IDF and other development frameworks on GitHub.
https://github.com/espressif
• ESP32 BBS Forum – Engineer-to-Engineer (E2E) Community for Espressif products where you can post questions,
share knowledge, explore ideas, and help solve problems with fellow engineers.
https://esp32.com/
• The ESP Journal – Best Practices, Articles, and Notes from Espressif folks.
https://blog.espressif.com/
• See the tabs SDKs and Demos, Apps, Tools, AT Firmware.
https://espressif.com/en/support/download/sdks-demos
Products
• ESP32-S3 Series SoCs – Browse through all ESP32-S3 SoCs.
https://espressif.com/en/products/socs?id=ESP32-S3
• ESP32-S3 Series Modules – Browse through all ESP32-S3-based modules.
https://espressif.com/en/products/modules?id=ESP32-S3
• ESP32-S3 Series DevKits – Browse through all ESP32-S3-based devkits.
https://espressif.com/en/products/devkits?id=ESP32-S3
• ESP Product Selector – Find an Espressif hardware product suitable for your needs by comparing or applying filters.
https://products.espressif.com/#/product-selector?language=en
Contact Us
• See the tabs Sales Questions, Technical Enquiries, Circuit Schematic & PCB Design Review, Get Samples
(Online stores), Become Our Supplier, Comments & Suggestions.
https://espressif.com/en/contact-us/sales-questions
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Revision History
Revision History
Date
Version
2022-07-22
v1.1
Release notes
• Update Table 1 and Table 2
• Other minor updates
• Update Bluetooth LE RF data
2022-04-21
v1.0
• Update power consumption data in Table 12
• Add certification and test information
• Add Table 6 and update description of ROM code printing in Section 3.3
2021-10-29
v0.6
Overall update for chip revision 1
2021-07-19
v0.5.1
Preliminary release, for chip revision 0
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Disclaimer and Copyright Notice
Information in this document, including URL references, is subject to change without notice.
ALL THIRD PARTY’S INFORMATION IN THIS DOCUMENT IS PROVIDED AS IS WITH NO
WARRANTIES TO ITS AUTHENTICITY AND ACCURACY.
NO WARRANTY IS PROVIDED TO THIS DOCUMENT FOR ITS MERCHANTABILITY, NONINFRINGEMENT, FITNESS FOR ANY PARTICULAR PURPOSE, NOR DOES ANY WARRANTY
OTHERWISE ARISING OUT OF ANY PROPOSAL, SPECIFICATION OR SAMPLE.
All liability, including liability for infringement of any proprietary rights, relating to use of information
in this document is disclaimed. No licenses express or implied, by estoppel or otherwise, to any
intellectual property rights are granted herein.
The Wi-Fi Alliance Member logo is a trademark of the Wi-Fi Alliance. The Bluetooth logo is a
registered trademark of Bluetooth SIG.
www.espressif.com
All trade names, trademarks and registered trademarks mentioned in this document are property
of their respective owners, and are hereby acknowledged.
Copyright © 2022 Espressif Systems (Shanghai) Co., Ltd. All rights reserved.
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