SMB10J18AHR5G

SMB10J9.0(A) – SMB10J40(A) Taiwan Semiconductor 1000W, 9V - 40V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Low profile package Ideal for automated placement Glass passivated chip junction Excellent clamping capability Fast response time: Typically less than 1.0ps Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 9 - 40 V VBR 10.0 - 49.1 V PPK 1,000 W TJ MAX 175 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● ● ● ● Protect sensitive circuit from damage by high voltage transients Lighting, ESD transient voltage protection of IC, system Inductive switching load protection of IC, system Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.110g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Peak power dissipation at TA = 25°C, tp = 1ms (1) SYMBOL VALUE UNIT PPK 1,000 W Steady state power dissipation Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load PD 5 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 V Junction temperature TJ -55 to +175 °C -55 to +175 °C Storage temperature TSTG Note: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 Devices for Bipolar Applications 1. For bidirectional use CA suffix 1 Version: B2102 SMB10J9.0(A) – SMB10J40(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 20 °C/W Junction-to-ambient thermal resistance RӨJA 100 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Device Device Marking Code UNI SMB10J9.0A SMB10J10A SMB10J11A SMB10J12A SMB10J13A SMB10J14A SMB10J15A SMB10J16A SMB10J17A SMB10J18A SMB10J20A SMB10J22A SMB10J24A SMB10J26A SMB10J28A SMB10J30A SMB10J33A SMB10J36A SMB10J40A Breakdown Voltage Test @ IT Current VBR (V) IT (mA) BI UNI BI Min Max SMB10J9.0CA 1KV KVC 10.0 11.1 SMB10J10CA 1KX KXC 11.1 12.3 SMB10J11CA 1KZ KZC 12.2 13.5 SMB10J12CA 1LE LEC 13.3 14.7 SMB10J13CA 1LG LGC 14.4 15.9 SMB10J14CA 1LK LKC 15.6 17.2 SMB10J15CA 1LM LMC 16.7 18.5 SMB10J16CA 1LP LPC 17.8 19.7 SMB10J17CA 1LR LRC 18.9 20.9 SMB10J18CA 1LT LTC 20.0 22.1 SMB10J20CA 1LV LVC 22.2 24.5 SMB10J22CA 1LX LXC 24.4 26.9 SMB10J24CA 1LZ LZC 26.7 29.5 SMB10J26CA 1ME MEC 28.9 31.9 SMB10J28CA 1MG MGC 31.1 34.4 SMB10J30CA 1MK MKC 33.3 36.8 SMB10J33CA 1MM MMC 36.7 40.6 SMB10J36CA 1MP MPC 40.0 44.2 SMB10J40CA 1MR MRC 44.4 49.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Stand-Off Voltage VWM (V) 9 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 Maximum Maximum Maximum Reverse Peak clamping Leakage Pulse voltage @VWM Current @IPPM ID (µA) IPPM (A) VC (V) 10 8 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 64.9 58.8 54.9 50.3 46.5 43.1 41.0 38.5 36.2 34.2 30.9 28.2 25.7 23.8 22.0 20.7 18.8 17.2 15.5 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SMB10Jx DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 9V(SMB10J9.0A) to 40V(SMB10J40CA) 2 Version: B2102 SMB10J9.0(A) – SMB10J40(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve PEAK PULSE POWER(PPP) OR CURRENT (IPP) ADERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 Non-reperirive pulse waveform shown in Fig.3 10 1 1 10 100 125 100 75 50 25 0 0 1000 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH, (μs) Fig.3 Clamping Power Pulse Waveform Fig.4 Maximum Non-Repetitive Forward Surge Current Unidirectional Only 100 140 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 120 PEAK FORWARD SURGE CURRENT (A) IPPM, PEAK PULSE CURRENT (%) 25 Rise time tr=10μs to 100% 100 Peak value IPPM 80 60 Half value-IPPM/2 10/1000μs, waveform 40 20 td 10 0 0 0.5 8.3ms single salf sine wave 1 1.5 2 2.5 1 3 PERCENT OF RATEDt, PEAK REVERSE VOLTAGE (%) TIME (ms) 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: B2102 SMB10J9.0(A) – SMB10J40(A) Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 4 Version: B2102 SMB10J9.0(A) – SMB10J40(A) Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: B2102