FDN335N

UMW R UMW FDN335N SOT-23 Plastic-Encapsulate MOSFETS FDN335N N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 70mΩ@ 4.5V 20 V 1.7A 100mΩ@ 2.5V FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design APPLICATION ※ Battery protection SOT–23 ※ Load switch ※ Battery management MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 ID 1.7 Pulsed Diode Curren IDM 10 Power Dissipation PD 1 W RθJA 250 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Thermal Resistance from Junction to Ambient (t≤10s) Operating Junction Storage Temperature www.umw-ic.com 1 Unit V A 友台半导体有限公司 UMW R UMW FDN335N SOT-23 Plastic-Encapsulate MOSFETS MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID = 250µA 20 VGS(th) VDS =VGS, ID = 250µA 0.4 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea Diode forward voltage V 1.5 V VDS =0V, VGS = ±8V ±100 nA VDS = 16V, VGS =0V 1 µA VGS = 4.5V, ID = 1.7A 55 70 mΩ VGS = 2.5V, ID = 1.5A 78 100 mΩ gfs VDS = 4.5V, ID = 1.7A 7 VSD IS= 1A,VGS=0V 0.8 RDS(on) S 1.2 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = 10V,VGS =0V, f=1MHz VDS = 10V,VGS = 4.5V, ID = 1.7A Rg f=1MHz 310 pF 80 pF 40 pF 3.5 nC 0.6 nC 1 nC 0.5 2.2 Ω Switchingbtr Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDS= 10V RL=3.5Ω, ID ≈ 1A, VGEN= 4.5V,Rg=3Ω tf 5 ns 8.5 ns 11 ns 3 ns Drain-source body diode characteristicstr Continuous Source-Drain Diode Current Pulsed Diode forward Curren Tc=25℃ IS ISM 1.2 A 10 A Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 10 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R www.umw-ic.com UMW FDN335N SOT-23 Plastic-Encapsulate MOSFETS 3 友台半导体有限公司