HY19P03B

HY19P03P/B P-Channel Enhancement Mode MOSFET Feature Description z Pin Description -30V/-90A RDS(ON)= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V S GD z 100% avalanche tested z Reliable and Rugged z Lead Free and Green Devices Available GD S TO-220FB-3L TO-263-2L (RoHS Compliant) Applications z Switching Application z Power Management for DC/DC P-Channel MOSFET Ordering and Marking Information Package Code P B HY19P03 HY19P03 YYXXXJWW G YYXXXJWW G P: TO-220FB-3L B: TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Device Note: H8$