DS12W-MS

www.msksemi.com DS12W-MS THRU DS110W-MS Semiconductor Compiance FEATURES 2 * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop 1 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any SOD-123FL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P/N Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig. 1) DS12W DS13W DS14W DS15W DS16W DS18W DS19W DS110W -MS -MS -MS -MS -MS -MS -MS -MS MARK K12 K13 K14 K15 K16 K18 K19 K110 VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 90 63 90 100 70 100 I(AV) 1.0 UNITS V V V A Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Typical Junction Capacitance (Note1) Operating Temperature Range TJ IFSM VF 30 0.70 0.2 0.55 IR 10 110 Ta=100 C Storage Temperature Range TSTG 0.85 CJ TJ TSTG -65 +125 -65 -65 +150 +150 A V mA mA pF C C NOTES: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. Thermal Resistance Junction to Ambient. www.msksemi.com DS12W-MS THRU DS110W-MS Semiconductor Compiance RATING AND CHARACTERISTIC CURVES (K12 THRU K110) FIG.2-TYPICAL FORWARD FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE K1 6 0.2 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) PEAK FORWARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 3.0 11 2- 0.4 10 2- K1 K1 8- K1 -K K1 0.6 1.0 K8 0.8 K1 4 0 K1 5K1 6 50 1.0 INSTANTANEOUS FORWARD CURRENT,(A) AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 1.2 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 30 .01 24 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 18 8.3ms Single Half Tj=25 C Sine Wave 12 JEDEC method 6 FIG.5 - TYPICAL REVERSE 0 CHARACTERISTICS 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 10 1.0 Tj=75 C .1 Tj=25 C 50 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENTAGE RATED PEAK REVERSE VOLTAGE www.msksemi.com DS12W-MS THRU DS110W-MS Semiconductor Compiance 1.8± 0.3 0.95 ±0.25 PACKAGE MECHANICAL DATA 1.15±0.25 0.05-0.30 2.75 ±0.25 0.6±0.3 3.7 ±0.30 Dimensions in millimeters 1.4 2.85 1.2 REEL SPECIFICATION P/N DS12W-MS THRU DS110W-MS PKG SOD-123FL QTY 3000 www.msksemi.com DS12W-MS THRU DS110W-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com