TSM6502CR RLG

TSM6502CR Taiwan Semiconductor N- and P-Channel 60V (D-S) Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses PARAMETER TYPE VALUE VDS N-ch P-ch 60 -60 34 40 68 110 10.3 9.5 ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) (max) APPLICATIONS VGS = 10V VGS = 4.5V VGS = -10V VGS = -4.5V N-ch P-ch N-ch P-ch Qg ● DC-DC Converters UNIT V mΩ nC ● Power Routing ● Motor Drives PDFN56 Dual Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL N-ch P-ch UNIT Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V 24 -18 5.4 -4 IDM 96 -72 A IAS EAS 12.7 24 -12.7 24 A mJ 40 40 8.1 8.1 2 2 0.4 0.4 Continuous Drain Current TC = 25°C (Note 1) ID TA = 25°C Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C PD TC = 125°C TA = 25°C PD TA = 125°C Operating Junction and Storage Temperature Range A W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Thermal Resistance – Junction to Case RӨJC 3.1 Thermal Resistance – Junction to Ambient RӨJA 61 THERMAL PERFORMANCE PARAMETER °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1701 TSM6502CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS Drain-Source VGS = 0V, ID = 250µA Breakdown Voltage VGS = 0V, ID = -250µA Gate Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Gate-Source Leakage VGS = ±20V, VDS = 0V Current VGS = ±20V, VDS = 0V SYMBOL TYPE MIN TYP MAX N-ch 60 -- -- P-ch -60 -- -- N-ch 1.2 1.7 2.5 P-ch -1.2 -1.5 -2.5 N-ch -- -- ±100 nA P-ch -- -- ±100 nA -- -- 1 -- -- 100 -- -- -1 -- -- -100 -- 28 34 -- 33 40 -- 57 68 -- 73 110 N-ch -- 19 -- P-ch -- 11 -- Qg(VGS=10V) N-ch -- 20.8 -- Qg(VGS=-10V) P-ch -- 18.1 -- Qg(VGS=4.5V) N-ch Qg(VGS=-4.5V) --- 10.3 P-ch 9.5 --- N-ch -- 3.9 -- P-ch -- 2.6 -- N-ch -- 4.2 -- P-ch -- 4.8 -- N-ch -- 1159 -- P-ch -- 930 -- N-ch -- 59 -- P-ch -- 65 -- N-ch -- 15 -- P-ch -- 26 -- N-ch 0.6 2 4 P-ch 4.5 15 30 BVDSS VGS(TH) IGSS VGS = 0V, VDS = 60V N-ch VGS = 0V, VDS = 60V Drain-Source Leakage TJ = 125°C Current VGS = 0V, VDS = -60V IDSS P-ch VGS = 0V, VDS = -60V TJ = 125°C VGS = 10V, ID = 5.4A Drain-Source On-State Resistance (Note 3) VGS = 4.5V, ID = 4.9A VGS = -10V, ID = -4A N-ch RDS(on) P-ch VGS = -4.5V, ID = -3.2A VDS = 5V, ID = 5.4A Forward Transconductance (Note 4) Dynamic (Note 3) VDS = -5V, ID = -4A N-ch Total Gate Charge VDS = 30V, ID = 5.4A P-ch VDS = -30V, ID = -4A Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance gfs N-ch VDS = 30V, ID = 4.9A Qgs P-ch VDS = -30V, ID = -3.2A Qgd N-ch Ciss VGS = 0V, VDS = 30V f = 1.0MHz Coss P-ch Reverse Transfer VGS = 0V, VDS = -30V Capacitance f = 1.0MHz Gate Resistance f = 1.0MHz Crss Rg 2 UNIT V V µA mΩ S nC pF Ω Version: A1701 TSM6502CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Switching CONDITIONS SYMBOL TYPE MIN TYP MAX N-ch --- 7.4 P-ch 4 --- N-ch -- 25 -- P-ch -- 28 -- N-ch -- 18 -- P-ch -- 44 -- N-ch -- 18 -- P-ch -- 44 -- N-ch -- -- 1 P-ch -- N-ch --- 16 -1 -- P-ch -- 13 -- N-ch -- 11 -- P-ch -- 7.8 -- UNIT (Note 4) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) N-ch VGS = 10V, VDS = 30V, tr ID = 5.4A, RG = 2Ω P-ch td(off) VGS = -10V, VDS = -30V, ID = -4A, RG = 2Ω tf ns Source-Drain Diode Forward Voltage (Note 3) Reverse Recovery Time VGS = 0V, IS = 5.4A VSD VGS = 0V, IS = -4A N-ch trr IS = 5.4A, dI/dt = 100A/μs Reverse Recovery P-ch Charge IS = -4A, dI/dt = 100A/μs Qrr V ns nC Notes: 1. Silicon limited current only. 2. N-ch : L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 12.7A, Starting TJ = 25°C P-ch : L = 0.3mH, VGS = -10V, VDD = -25V, RG = 25Ω, IAS = -12.7A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM6502CR RLG PACKAGE PACKING PDFN56 Dual 2,500pcs / 13” Reel 3 Version: A1701 TSM6502CR Taiwan Semiconductor CHARACTERISTICS CURVES (N-Channel) (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 20 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 16 12 ID, Drain Current (A) ID, Drain Current (A) 20 8 VGS=3V 4 16 12 8 25℃ -55℃ 4 150℃ 0 0 0 1 2 3 0 4 1 3 4 Gate-Source Voltage vs. Gate Charge 0.05 10 0.04 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current VGS=4.5V 0.03 VGS=10V 0.02 0.01 0 0 4 8 12 16 VDS=30V ID=5.4A 8 6 4 2 0 0 20 5 2.2 VGS=10V ID=5.4A 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 15 20 25 100 125 150 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2 10 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.08 0.07 0.06 0.05 0.04 0.03 ID=5.4A 0.02 0.01 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1701 TSM6502CR Taiwan Semiconductor CHARACTERISTICS CURVES (N-Channel) (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage 1600 C, Capacitance (pF) 1400 CISS 1200 1000 800 600 400 CRSS 200 COSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 10 20 30 40 50 60 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) ID, Drain Current (A) 100 RDS(ON) 10 1 SINGLE PULSE RӨJC=3.1°C/W TC=25°C 10 150℃ 25℃ 1 -55℃ 0.1 0.1 0.1 1 10 0.2 100 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=3.1°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A1701 TSM6502CR Taiwan Semiconductor CHARACTERISTICS CURVES (P-Channel) (TA = 25°C unless otherwise noted) Transfer Characteristics VGS=-10V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V 16 -ID, Continuous Drain Current (A) -ID, Continuous Drain Current (A) Output Characteristics 20 VGS=-4V 12 VGS=-3.5V 8 VGS=-3V 4 0 20 16 12 8 25℃ 4 150℃ 0 0 1 2 3 4 0 1 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 10 0.12 -VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 -VGS, Gate to Source Voltage (V) -VDS, Drain to Source Voltage (V) 0.1 VGS=-4.5V 0.08 0.06 VGS=-10V 0.04 0.02 0 0 4 8 12 16 VDS=-30V ID=-4A 8 6 4 2 0 0 20 4 1.8 VGS=-10V ID=-4A 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 12 16 20 100 125 150 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 1.6 8 Qg, Gate Charge (nC) -ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0.18 0.16 0.14 0.12 0.1 0.08 0.06 ID=-4A 0.04 0.02 3 4 5 6 7 8 9 10 -VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 6 Version: A1701 TSM6502CR Taiwan Semiconductor CHARACTERISTICS CURVES (P-Channel) (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1400 C, Capacitance (pF) 1200 1000 CISS 800 600 400 CRSS 200 COSS 1.2 ID=-1mA 1.1 1 0.9 0.8 0 0 10 20 30 40 50 -75 60 -VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 100 -IS, Reverse Drain Current (A) RDS(ON) -ID, Drain Current (A) -50 10 1 SINGLE PULSE RӨJC=3.1°C/W TC=25°C 100ms 0.1 10 25℃ 150℃ 1 -55℃ 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 -VSD, Body Diode Forward Voltage (V) -VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=3.1°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 7 Version: A1701 TSM6502CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 Dual SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 6502 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 8 Version: A1701 TSM6502CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9 Version: A1701