DISCRETE SEMICONDUCTORS
DATA SHEET
BYV42E, BYV42EB series
Rectifier diodes
ultrafast, rugged
Product specification
September 2018
WeEn Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
BYV42E, BYV42EB series
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 150 V/ 200 V
1
VF ≤ 0.85 V
3
IO(AV) = 30 A
2
sym084
IRRM = 0.2 A
trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
SOT78 (TO220AB)
DESCRIPTION
1
anode 1 (a)
2
cathode (k) 1
3
anode 2 (a)
tab
cathode (k)
SOT404
tab
tab
2
1
3
D2PAK (SOT404)
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
IO(AV)
Average rectified output current
(both diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
MIN.
BYV42E / BYV42EB
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Tmb ≤ 144˚C
square wave
δ = 0.5; Tmb ≤ 108 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 108 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
tp = 100 µs
current per diode
Storage temperature
Operating junction temperature
-
MAX.
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
-
30
A
-
30
A
-
150
160
A
A
-
0.2
A
-
0.2
A
-40
-
150
150
˚C
˚C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
September 2018
1
Rev 1.400
WeEn Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
MAX.
UNIT
-
8
kV
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages,
pcb mounted, minimum footprint,
FR4 board
Rth j-a
MIN.
TYP.
MAX.
UNIT
-
60
50
2.4
1.4
-
K/W
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.78
0.95
1.00
0.5
10
6
20
0.85
1.05
1.20
1
100
15
28
V
V
V
mA
µA
nC
ns
-
13
1
22
-
ns
V
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
trr1
Reverse recovery charge
Reverse recovery time
trr2
Vfr
Reverse recovery time
Forward recovery voltage
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
September 2018
2
Rev 1.400
WeEn Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYV42E, BYV42EB series
0.5A
F
dt
IF
t
0A
rr
time
Q
I
10%
s
I rec = 0.25A
IR
100%
trr2
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
20
F
PF / W
Tmb(max) / C
102
D = 1.0
BYV42
Vo = 0.705 V
Rs = 0.0097 Ohms
0.5
15
time
0.2
0.1
10
114
126
VF
V
tp
I
5
D=
tp
T
138
fr
t
T
VF
0
time
Fig.2. Definition of Vfr
0
5
10
15
IF(AV) / A
20
150
25
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
R
15
PF / W
Tmb(max) / C
114
a = 1.57
BYV42
Vo = 0.705 V
Rs = 0.0097 Ohms
1.9
2.2
D.U.T.
2.8
10
Voltage Pulse Source
4
Current
shunt
138
5
to ’scope
0
0
5
IF(AV) / A
10
150
15
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.3. Circuit schematic for trr2
September 2018
126
3
Rev 1.400
WeEn Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
trr / ns
100 Qs / nC
1000
IF=20A
10A
5A
2A
1A
IF=20A
100
10
IF=1A
10
1
1
10
dIF/dt (A/us)
1.0
100
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
1.0
10
Transient thermal impedance, Zth j-mb (K/W)
IF=20A
1
1
IF=1A
0.1
0.1
PD
0.01
0.001
1us
0.01
10
-dIF/dt (A/us)
1
100
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
50
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV42E
10s
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5
VF / V
1.0
1.5
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
September 2018
4
Rev 1.400
WeEn Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
c
b(3×)
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
September 2018
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
5
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Rev 1.400
WeEn Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
MECHANICAL DATA
September 2018
6
Rev 1.400
WeEn Semiconductors
Legal information
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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