NJG1681MD7-TE1

NJG1681MD7 HIGH POWER SPDT SWITCH GaAs MMIC  GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 6GHz. In addition, this switch is able to handle high power signals. The NJG1681MD7 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin EQFN14-D7 package is adopted.  PACKAGE OUTLINE NJG1681MD7  APPLICATIONS LTE, UMTS, CDMA, GSM applications IEEE802.11p application Antenna switching, bands switching, post PA switching applications  FEATURES  Low voltage logic control  Low voltage operation  Low distortion VCTL(H)=1.8V typ. VDD=2.7V typ. IIP3=+73dBm typ. @f=829+849MHz, PIN=24dBm IIP3=+71dBm typ. @f=1870+1910MHz, PIN=24dBm 2nd harmonics=-85dBc typ. @ f=0.9GHz, PIN=35dBm 3rd harmonics=-90dBc typ. @ f=0.9GHz, PIN=35dBm  P-0.1dB +36dBm min.  Low insertion loss 0.18dB typ. @f=0.9GHz, PIN=35dBm 0.20dB typ. @f=1.9GHz, PIN=33dBm 0.23dB typ. @f=2.7GHz, PIN=27dBm 0.45dB typ. @f=6.0GHz, PIN=27dBm  Ultra small & ultra thin package EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm.)  RoHS compliant and Halogen Free, MSL1  PIN CONFIGURATION (TOP VIEW) 11 10 9 8 7 DECODER 12 13 6 14 5 1 2 3 Pin connection 1. GND 8. GND 2. NC(GND) 9. P1 3. P2 10. GND 4. GND 11. GND 5. GND 12. VDD 6. PC 13. NC(GND) 7. GND 14. VCTL Exposed PAD: GND 4  TRUTH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL Path H PC-P1 L PC-P2 NOTE: Please note that any information on this datasheet will be subject to change. Ver.2015-07-17 -1- NJG1681MD7  ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50) PARAMETER SYMBOL CONDITIONS RATINGS UNITS 37 dBm RF Input Power PIN VDD =2.7V Supply Voltage VDD 5.0 V Control Voltage VCTL 5.0 V 1300 mW Four-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150°C Power Dissipation PD Operating Temp. Topr -40 to +105 °C Storage Temp. Tstg -55 to +150 °C  ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: Ta=+25°C, VDD=2.7V, VCTL(L)=0V, VCTL(H)=1.8V) PARAMETERS SYMBOL Supply Voltage VDD Operating Current IDD CONDITIONS No RF input, VDD=2.7V MIN TYP MAX UNITS 2.375 2.7 5.0 V - 95 180 A Control Voltage (LOW) VCTL(L) 0 - 0.45 V Control Voltage (HIGH) VCTL(H) 1.35 1.8 5.0 V - 4 10 A Control Current ICTL VCTL(H)=1.8V -2- NJG1681MD7  ELECTRICAL CHARACTERISTICS 2 (RF) (General conditions: Ta=+25°C, Zs=Zl=50, VDD=2.7V, VCTL(L)=0V, VCTL(H)=1.8V) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion Loss 1 LOSS1 f=0.9GHz, PIN=35dBm - 0.18 0.33 dB Insertion Loss 2 LOSS2 f=1.9GHz, PIN=33dBm - 0.20 0.40 dB Insertion Loss 3 LOSS3 f=2.7GHz, PIN=27dBm - 0.23 0.43 dB Insertion Loss 4 LOSS4 f=6.0GHz, PIN=27dBm - 0.45 0.65 dB Isolation 1 ISL1 f=0.9GHz, PIN=35dBm 40 45 - dB Isolation 2 ISL2 f=1.9GHz, PIN=33dBm 30 35 - dB Isolation 3 ISL3 f=2.7GHz, PIN=27dBm 25 30 - dB Isolation 4 ISL4 f=6.0GHz, PIN=27dBm 16.5 20 - dB Input Power at 0.1dB Compression Point P-0.1dB f=0.9GHz, f=1.9GHz, f=2.7GHz, f=6.0GHz +36 - - dBm 2nd Harmonics 1 2fo(1) f=0.9GHz, PIN=35dBm - -85 -70 dBc 2nd Harmonics 2 2fo(2) f=1.9GHz, PIN=33dBm - -90 -70 dBc 2nd Harmonics 3 2fo(3) f=2.7GHz, PIN=27dBm - -90 -70 dBc 3rd Harmonics 1 3fo(1) f=0.9GHz, PIN=35dBm - -90 -70 dBc 3rd Harmonics 2 3fo(2) f=1.9GHz, PIN=33dBm - -80 -70 dBc 3rd Harmonics 3 3fo(3) f=2.7GHz, PIN=27dBm - -90 -70 dBc Input 3rd order intercept point1 IIP3(1) f=829+849MHz, PIN=24dBm each +65 +73 - dBm Input 3rd order intercept point2 IIP3(2) f=1870+1910MHz, PIN=24dBm each +65 +71 - dBm VSWR 1 VSWR 1 on-state ports, f=2.7GHz - 1.1 1.4 VSWR 2 VSWR 2 on-state ports, f=6.0GHz - 1.1 1.4 TSW 50% VCTL to 10/90% RF - 1 5 Switching time s *1: IIP3 are defined by the following equations. IIP3=(3 x Pout-IM3)/2+LOSS -3- NJG1681MD7  TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 2 NC(GND) No connected terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 3 P2 RF transmitting/receiving port. No DC blocking capacitor is required for this port unless DC is biased externally. 4 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 5 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 6 PC RF transmitting/receiving port. No DC blocking capacitor is required for this port unless DC is biased externally. Please connect an inductor with GND terminal for ESD protection. 7 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 8 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 9 P1 RF transmitting/receiving port. No DC blocking capacitor is required for this port unless DC is biased externally. 10 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 11 GND Ground terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 12 VDD Positive voltage supply terminal. The positive voltage (+2.375~+5V) has to be supplied. Please connect a bypass capacitor with GND terminal for excellent RF performance. 13 NC(GND) No connected terminal. Please connect this terminal with ground plane as close as possible for excellent RF performance. 14 VCTL Control signal input terminal. This terminal is set to High-Level (+1.35~+5.0V) or Low-Level (0~+0.45V). Exposed Pad GND Ground terminal. -4- NJG1681MD7  ELECTRICAL CHARACTERISTICS (With application circuit) -0.4 -10 -0.8 -20 -1.2 -30 -1.6 -40 -2.0 -50 -2.4 0.0 1.0 2.0 3.0 4.0 5.0 (PC-P2 ON, V =2.7V, V =0V) DD CTL (Losses of external circuits are excluded) 0.0 0 Insertion Loss (dB) Insertion Loss (dB) 0.0 Loss, ISL vs Frequency PC-P2 Isolation (dB) (PC-P1 ON, V =2.7V, V =1.8V) DD CTL (Losses of external circuits are excluded) -60 6.0 -0.4 -10 -0.8 -20 -1.2 -30 -1.6 -40 -2.0 -50 -2.4 0.0 1.0 2.0 3.0 4.0 Frequency (GHz) VSWR vs Frequency VSWR vs Frequency DD CTL =1.8V) (PC-P2 ON, V =2.7V, V DD 2.0 CTL =0V) 2.0 PC Port P1 Port PC Port P2 Port 1.8 1.8 1.6 1.6 VSWR VSWR -60 6.0 5.0 Frequency (GHz) (PC-P1 ON, V =2.7V, V 0 PC-P1 Isolation (dB) Loss, ISL vs Frequency 1.4 1.2 1.4 1.2 1.0 0.0 1.0 2.0 3.0 4.0 5.0 1.0 0.0 6.0 1.0 2.0 Frequency (GHz) IDD vs. VDD (No RF input, PC-P1 ON, V CTL 200 3.0 4.0 5.0 6.0 Frequency (GHz) Control Current vs. VCTL =1.8V) (No RF input, PC-P1 ON, V =2.7V) DD 12 Control Current (A) 10 IDD (A) 150 100 50 8 6 4 2 0 0 2.5 3 3.5 VDD (V) 4 4.5 5 1.5 2 2.5 3 3.5 4 4.5 5 VCTL (V) -5- NJG1681MD7  ELECTRICAL CHARACTERISTICS (With application circuit) Output Power, I DD vs Input Power Output Power, I DD (f=0.9GHz, PC-P1 ON, V =1.8V) CTL (Losses of external circuits are excluded) 200 VV =2.375V =2.5V 36 DD DD 30 100 28 26 50 24 22 DD 150 32 30 100 28 26 50 24 22 20 0 24 26 28 30 32 34 20 36 0 20 22 24 Input Power (dBm) Output Power, I DD Output Power, I vs Input Power DD 36 200 30 100 28 26 50 24 22 20 0 26 36 vs Input Power 200 28 30 32 Input Power (dBm) 34 36 VVDD=2.7V =2.7V 34 Output Power (dBm) (A) 150 32 DD DD Operation Current I DD 24 34 DD DD =3.6V VVDD=5V 22 32 VV =2.375V =2.5V DD DD VVDD=2.7V =2.7V 20 30 (f=6.0GHz, PC-P1 ON, V =1.8V) CTL (Losses of external circuits are excluded) VV =2.375V =2.5V 34 28 Input Power (dBm) (f=2.7GHz, PC-P1 ON, V =1.8V) CTL (Losses of external circuits are excluded) 36 26 DD =3.6V VVDD=5V DD 150 32 30 100 28 26 50 24 DD 22 Operation Current I (A) 20 Output Power (dBm) (A) DD =3.6V VVDD=5V DD 150 32 VVDD=2.7V =2.7V 34 Output Power (dBm) (A) DD DD DD =3.6V VVDD=5V Operation Current I Output Power (dBm) 34 200 VV =2.375V =2.5V DD DD VVDD=2.7V =2.7V Operation Current I 36 vs Input Power (f=1.9GHz, PC-P1 ON, V =1.8V) CTL (Losses of external circuits are excluded) 22 20 0 20 22 24 26 28 30 32 34 36 Input Power (dBm) -6- NJG1681MD7  ELECTRICAL CHARACTERISTICS (With application circuit) Loss, ISL vs Input Power (f=1.9GHz, PC-P1 ON, V =1.8V) CTL =1.8V) (Losses of external circuits are excluded) 0.0 -0.2 -5 -0.2 -5 -0.4 -10 -0.4 -10 -15 VV =2.5V =2.375V DD DD -0.8 -20 VV =2.7V =2.7V DD DD VVDD=3.6V =5V -1.0 -25 DD -1.2 26 28 30 32 34 -0.8 VV =2.7V =2.7V -20 VVDD=3.6V =5V -25 DD DD -1.0 DD -1.6 -40 -45 -1.8 -45 -50 -2.0 -40 24 DD DD -35 -1.6 22 -15 VV =2.5V =2.375V -30 -35 20 -0.6 -1.4 -1.4 -2.0 -50 20 36 22 24 Loss, ISL vs Input Power 28 30 32 34 36 Loss, ISL vs Input Power =1.8V) (f=6.0GHz, PC-P1 ON, V CTL (Losses of external circuits are excluded) =1.8V) (Losses of external circuits are excluded) -0.2 -5 -0.2 -5 -0.4 -10 -0.4 -10 -0.6 -15 -0.8 -20 -1.0 -25 -1.2 -30 -0.6 -15 VV =2.5V =2.375V DD DD -0.8 VV =2.7V =2.7V -20 VVDD=3.6V =5V -25 DD DD -1.0 DD -1.2 -30 -1.4 -35 -1.6 -40 Insertion Loss (dB) 0.0 PC-P2 Isolation (dB) 0 0.0 Insertion Loss (dB) CTL 26 Input Power (dBm) Input Power (dBm) (f=2.7GHz, PC-P1 ON, V 0 -1.2 -30 -1.8 PC-P2 Isolation (dB) -0.6 Insertion Loss (dB) 0 0.0 Insertion Loss (dB) CTL -1.4 0 -35 VVDD=2.375V =2.5V DD -1.6 -40 =2.7V VVDD=2.7V DD PC-P2 Isolation (dB) (f=0.9GHz, PC-P1 ON, V (Losses of external circuits are excluded) PC-P2 Isolation (dB) Loss, ISL vs Input Power V =3.6V -1.8 -45 -1.8 -2.0 -50 -2.0 20 22 24 26 28 30 32 Input Power (dBm) 34 36 V DD=5V -45 DD -50 20 22 24 26 28 30 32 34 36 Input Power (dBm) -7- NJG1681MD7  ELECTRICAL CHARACTERISTICS (With application circuit) Loss, ISL vs Ambient Temperature Loss, ISL vs Ambient Temperature -0.4 -20 VV =2.5V =2.375V DD DD VVDD=2.7V =2.7V V DD=3.6V VDD =5V DD -0.6 -30 -0.8 -1.0 -50 -40 -25 0 25 50 75 100 IN -50 125 -10 =2.375V VV =2.5V -0.4 DD DD DD DD VV =3.6V =5V DD DD -0.6 -30 -0.8 -40 -1.0 -50 -25 0 -20 DD DD VV =3.6V =5V DD DD -0.6 -30 -0.8 -40 Insertion Loss (dB) =2.375V VV =2.5V PC-P2 Isolation (dB) Insertion Loss (dB) -10 DD DD 100 -50 125 (f=6.0GHz, PC-P1 ON, P =27dBm) IN 0.0 0 VV =2.7V =2.7V 75 Loss, ISL vs Ambient Temperature (f=2.7GHz, PC-P1 ON, P =27dBm) -0.4 50 Ambient Temperature ( C) Loss, ISL vs Ambient Temperature -0.2 25 o Ambient Temperature ( C) IN -20 VV =2.7V =2.7V o 0.0 0 -0.2 Insertion Loss (dB) -10 PC-P2 Isolation (dB) -0.2 Insertion Loss (dB) (f=1.9GHz, PC-P1 ON, P =33dBm) 0.0 0 0 -0.2 -10 -0.4 -20 -0.6 -30 V V =2.5V =2.375V DD -0.8 -40 DD V V =2.7V =2.7V PC-P2 Isolation (dB) IN 0.0 PC-P2 Isolation (dB) (f=0.9GHz, PC-P1 ON, P =35dBm) DD V DD =3.6V VDD =5V DD -1.0 -50 -25 0 25 50 75 100 -50 125 -1.0 -50 -25 o 50 DD 30 I DD 100 20 50 10 I 25 50 CTL 75 100 o Ambient Temperature ( C) 0 125 4 Switching Time (s) CTL 150 Control Current (A) Operating Current (A) 40 DD DD I 0 -50 125 Trise Trise Tfall Tfall VV =2.7V =2.7V DD DD VV =3.6V =5V -25 100 (V =2.7V, VCTL=0/1.8V) 5 DD DD 0 -50 75 Switching Time vs Ambient Temperature VV =2.5V =2.375V 200 50 Ambient Temperature ( C) DC Current vs Ambient Temperature 250 25 o Ambient Temperature ( C) (No RF Signal) 0 3 2 1 0 -50 -25 0 25 50 75 o 100 125 Ambient Temperature ( C) -8- NJG1681MD7  APPLICATION CIRCUIT (TOP VIEW) P1 11 9 8 7 DECODER 12 VDD 2.7V 10 C1 13 6 L1* 14 VCTL 0/1.8V PC 5 1 2 3 4 P2 Note: No DC blocking capacitors are required on all RF ports, unless DC is biased externally. * The Inductor L1 is required for enhancing ESD protection level. The inductor L1 is recommended in order to keep the DC bias level of each RF port at 0 V level tightly.  PARTS LIST No. Parameters Note C1 1000pF MURATA (GRM15) L1 68nH TAIYO-YUDEN (HK1005)  PCB LAYOUT (TOP VIEW) GND VDD NC VCTL PCB SIZE: 19.4 x 15.0 mm PCB: FR-4, t=0.5mm Capacitor size: 1005 MICROSTRIP LINE WIDTH: 0.98mm C1 P1 P2 Losses of PCB and connectors, Ta=+25°C Frequency (GHz) Loss (dB) 0.9 0.09 1.9 0.18 2.7 0.26 6.0 0.48 PC  PRECAUTIONS [1] No DC blocking capacitors are required at each RF port normally. When the other device is biased at certain voltage and connected to the NJG1681MD7, a DC block capacitor is required between the device and the switch IC. This is because the each RF port of NJG1681MD7 is biased at 0 V (GND). [2] For avoiding the degradation of RF performance, the bypass capacitor (C1) should be placed as close as possible to VDD terminal [3] For good RF performance, all GND terminals are must be connected to PCB ground plane of substrate, and through - holes for GND should be placed the IC near. -9- NJG1681MD7  RECOMMENDED FOOTPRINT PATTERN (EQFN14-D7 PACKAGE Reference) :Land :Mask (Open area) *Metal mask thickness : 100μm PKG: 1.6mm x 1.6mm Pin pitch: 0.4mm :Resist(Open area) Detail A - 10 - NJG1681MD7  PACKAGE OUTLINE (EQFN14-D7) Units Board Terminal treat Molding material Weight : mm : Cu : SnBi : Epoxy resin : 3.4mg Exposed PAD Ground connection is required. Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material.  Do NOT eat or put into mouth.  Do NOT dispose in fire or break up this product.  Do NOT chemically make gas or powder with this product.  To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 11 - 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. This product and any technical information relating thereto are subject to complementary export controls (so-called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us. • Aerospace Equipment • Equipment Used in the Deep Sea • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.) • Life Maintenance Medical Equipment • Fire Alarms / Intruder Detectors • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.) • Various Safety Devices • Traffic control system • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. Anti-radiation design is not implemented in the products described in this document. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/