MBRD20100CT
Technical Data
Data Sheet N0068, Rev. A
MBRD20100CT SCHOTTKY RECTIFIER
Features
150℃ TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
“-A” is an AEC-Q101 qualified device
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DPAK
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
Condition
Max.
Units
-
100
V
10(peg leg)
20(peg device)
A
120
A
Average Rectified Forward Current
IF (AV)
50% duty cycle @TC =105°C,
rectangular wave form
Peak One Cycle Non-Repetitive Surge
Current(peg leg)
IFSM
8.3 ms, half Sine pulse
Electrical Characteristics:
Characteristics
Symbol
Condition
Typ.
Max.
0.75
0.90
@ 10A, Pulse, TJ = 125 C
0.64
0.84
V
@VR = rated VR, TJ = 25 C
0.006
1.0
mA
IR2
@VR = rated VR, TJ = 125 C
1
6.0
mA
CT
@VR = 5V, TC = 25 C, fSIG = 1MHz
230
250
pF
Forward Voltage Drop
(per leg) *
VF1
@ 10A, Pulse, TJ = 25 C
VF2
Reverse Current (per leg) *
IR1
Junction Capacitance(per leg)
* Pulse width < 300 µs, duty cycle < 2%
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Units
V
MBRD20100CT
Technical Data
Data Sheet N0068, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
TJ
Tstg
-
-55 to +150
-55 to + 150
C
C
RJC
-
3.5
C/W
wt
-
0.39
g
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case(per leg)
Approximate Weight
Case Style
DPAK
Ratings and Characteristics Curves
10
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
Instantaneous Reverse Current (mA)
1000
1
TJ=125℃
0.1
0.01
0.001
TJ=25℃
0.0001
10
20
30
40
50
60
70
80
Fig.1-Typical Junction Capacitance
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.3
0.4
0.5
90
Pe r ce nt of Rate d Pe ak Re ve r s e V oltage (%)
Reverse Voltage (V)
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
0.6
0.7
0.8
0.9
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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1
100
MBRD20100CT
Technical Data
Data Sheet N0068, Rev. A
Mechanical Dimensions DPAK
SYMBOL
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
Θ
h
V
Ordering Information
Device
MBRD20100CT
MBRD20100CTTR
Package
DPAK
(Pb-Free)
DPAK
(Pb-Free)
Millimeters
Inches
Min.
Max.
2.20
2.40
0.00
0.127
0.66
0.86
0.46
0.60
6.50
6.70
5.13
5.46
4.83 REF.
6.00
6.20
2.186
2.386
9.70
10.40
2.90 REF.
1.40
1.70
1.60 REF.
0.60
1.00
1.10
1.30
0°
8°
0.00
0.30
5.35 REF.
Min.
Max.
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.024
0.256
0.264
0.202
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.381
0.409
0.144 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0.043
0.051
0°
8°
0.000
0.012
0.211 REF.
Marking Diagram
Where XXXXX is YYWWL
Shipping
MBR
D
20
100
CT
SSG
YY
WW
L
2500pcs / reel
2500pcs / reel
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
Packaging specification.
= Device Type
= Package type
= Forward Current (20A)
= Reverse Voltage (100V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Carrier Tape Specification DPAK
SYMBOL
A
B
C
d
E
F
P0
P
P1
W
Min.
Millimeters
Max.
6.80
10.40
2.60
Φ1.45
1.65
7.40
3.90
7.90
1.90
15.90
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7.00
10.60
2.80
Φ1.65
1.85
7.60
4.10
8.10
2.10
16.30
MBRD20100CT
Technical Data
Data Sheet N0068, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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