BC807-40

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features • AEC-Q101 Qualified and PPAP Capable • Halogen and Antimony Free(HAF), RoHS compliant Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage BC807 BC808 BC807 BC808 Collector Emitter Voltage Value 50 30 45 25 -VCBO -VCEO Emitter Base Voltage Unit V V -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 300 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Electrical Characteristics at Ta = 25 OC Parameter C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 100 160 250 40 - 250 400 600 - - Collector Base Cutoff Current at -VCB = 20 V -ICBO - - 100 nA Emitter Base Cutoff Current at -VEB = 5 V -IEBO - - 100 nA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA -VCE(sat) - - 0.7 V Base Emitter Voltage at -IC = 500 mA, -VCE = 1 V -VBE(on) - - 1.2 V fT 80 - - MHz Ccbo - 9 - pF DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group -16 -25 -40 at -VCE = 1 V, -IC = 500 mA Transition Frequency at -VCE = 5 V, -IC = 10 mA, f = 50 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated：13/09/2016 Rev：01 BC807 / BC808-AH Power Dissipation: Ptot (mW) 500 400 300 200 100 0 0 25 100 150 Ambient Temperature: Ta ( C) 200 O Power Derating Curve SEMTECH ELECTRONICS LTD. ® Dated：13/09/2016 Rev：01