SIT8924BA-22-33E-50.000000D 数据手册
SiT8924B
Automotive AEC-Q100 Oscillator
Features
Applications
AEC-Q100 with extended temperature range (-55°C to 125°C)
Frequencies between 1 MHz and 110 MHz accurate to
6 decimal places
Supply voltage of 1.8V or 2.25V to 3.63V
Excellent total frequency stability as low as ±20 ppm
Industry best G-sensitivity of 0.1 PPB/G
Low power consumption of 3.8 mA typical at 1.8V
Standby mode for longer battery life
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Automotive, extreme temperature and other high-rel
electronics
Infotainment systems, collision detection devices, and
in-vehicle networking
Powertrain control
Electrical Characteristics
Table 1. Electrical Characteristics[1,2]
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated.
Typical values are at 25°C and nominal supply voltage.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
110
MHz
Refer to Table 13 to 15 for a list supported frequencies
Frequency Stability and Aging
Frequency Stability
F_stab
-20
–
+20
ppm
-25
–
+25
ppm
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
supply voltage and load (15 pF ± 10%)
-30
–
+30
ppm
-50
–
+50
ppm
-40
–
+85
°C
AEC-Q100 Grade 3
-40
–
+105
°C
AEC-Q100 Grade 2
-40
–
+125
°C
AEC-Q100 Grade 1
-55
–
+125
°C
Extended cold AEC-Q100 Grade1
Operating Temperature Range
Operating Temperature
Range (ambient)
T_use
Supply Voltage and Current Consumption
Supply Voltage
Current Consumption
OE Disable Current
Standby Current
Vdd
Idd
I_od
I_std
1.62
1.8
1.98
V
2.25
–
3.63
V
All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V
and 3.3V are supported
–
4.0
4.8
mA
No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
–
4.5
mA
Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state
–
–
4.3
mA
Vdd = 1.8V, OE = Low, Output in high Z state
–
2.6
–
µA
Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down
–
1.4
–
µA
Vdd = 2.5V, ST = Low, Output is weakly pulled down
–
0.6
–
µA
Vdd = 1.8V, ST = Low, Output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
Output High Voltage
Output Low Voltage
Rev 1.7
DC
Tr, Tf
All Vdd levels
45
–
55
%
–
1.5
3
ns
Vdd = 2.25V - 3.63V, 20% - 80%
–
1.3
2.5
ns
Vdd = 1.8V, 20% - 80%
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
VOH
VOL
May 22, 2019
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SiT8924B Automotive AEC-Q100 Oscillator
Table 1. Electrical Characteristics[1,2] (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Input Characteristics
Input High Voltage
VIH
70%
–
–
Vdd
Input Low Voltage
VIL
Input Pull-up Impedance
Z_in
–
–
30%
Vdd
Pin 1, OE or ST
–
100
–
kΩ
Pin 1, OE logic high or logic low, or ST logic high
2
–
–
MΩ
Pin 1, ST logic low
Pin 1, OE or ST
Startup and Resume Timing
Startup Time
T_start
–
–
5.5
ms
Measured from the time Vdd reaches its rated minimum value
T_oe
–
–
130
ns
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
T_resume
–
–
5
ms
Measured from the time ST pin crosses 50% threshold
RMS Period Jitter
T_jitt
–
1.6
2.5
ps
f = 75 MHz, 2.25V to 3.63V
–
1.9
3.0
ps
f = 75 MHz, 1.8V
RMS Phase Jitter (random)
T_phj
–
0.5
–
ps
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
–
1.3
–
ps
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Enable/Disable Time
Resume Time
Jitter
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristic table is specified for the nominal value of the highest voltage option for that parameter and
at 25°C temperature.
Table 2. Pin Description
Pin
Symbol
Output Enable
1
OE/ ST /NC
Top View
Functionality
Standby
No Connect
H[3]: specified frequency output
L: output is high impedance. Only output driver is disabled.
H[3]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode.
Supply current reduces to I_std.
Any voltage between 0 and Vdd or Open[3]: Specified frequency
output. Pin 1 has no function.
OE/ST/NC
1
4
VDD
GND
2
3
OUT
[4]
2
GND
Power
Electrical ground
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[4]
Figure 1. Pin Assignments
Notes:
3. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.7
Page 2 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Min.
Max.
Unit
Storage Temperature
Parameter
-65
150
°C
Vdd
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Junction Temperature[5]
–
150
°C
θJA, 4 Layer Board
θJA, 2 Layer Board
θJC, Bottom
(°C/W)
(°C/W)
(°C/W)
7050
142
273
30
5032
97
199
24
3225
109
212
27
2520
117
222
26
2016
152
252
36
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration[6]
Package
Note:
6. Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table.
Table 5. Maximum Operating Junction Temperature[7]
Max Operating Temperature (ambient)
Maximum Operating Junction Temperature
85°C
95°C
105°C
115°C
125°C
135°C
Note:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
Rev 1.7
Page 3 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Test Circuit and Waveform
Vdd
Vout
4
3
Test
Point
tr
tf
80% Vdd
Power
Supply
0.1µF
1
15pF
(including probe
and fixture
capacitance)
2
50%
20% Vdd
High Pulse
(TH)
Low Pulse
(TL)
Period
Vdd
1kΩ
OE/NC Function
Figure 3. Waveform[8]
Figure 2. Test Circuit[8]
Note:
8. Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
T_start
Pin 4 Voltage
No Glitch
during start up
T_resume
ST Voltage
CLK Output
CLK Output
HZ
HZ
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST Mode)[9]
Figure 5. Standby Resume Timing ( ST Mode Only)
Vdd
Vdd
50% Vdd
OE Voltage
50% Vdd
T_oe
OE Voltage
T_oe
CLK Output
CLK Output
HZ
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
9. SiT8924 has “no runt” pulses and “no glitch” output during startup or resume.
Rev 1.7
Page 4 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Performance Plots[10]
1.8 V
2.5 V
2.8 V
3V
3.3 V
6.0
DUT1
DUT2
DUT3
DUT4
DUT5
DUT6
DUT7
DUT8
DUT9
DUT10
DUT11
DUT12
DUT13
DUT14
DUT15
DUT16
DUT17
DUT18
DUT19
DUT20
25
5.5
20
Frequency (ppm)
Idd (mA)
5.0
4.5
4.0
3.5
15
10
5
0
-5
-10
-15
-20
3.0
0
20
40
60
80
-25
100
-55
-35
-15
Frequency (MHz)
2.5 V
2.8 V
3.0 V
45
65
85
105
125
Figure 9. Frequency vs Temperature
1.8 V
3.3 V
2.5 V
2.8 V
3.0 V
3.3 V
55
4.0
54
3.5
53
3.0
Duty cycle (%)
RMS period jitter (ps)
25
Temperature (°C)
Figure 8. Idd vs Frequency
1.8 V
5
2.5
2.0
1.5
1.0
52
51
50
49
48
47
0.5
46
0.0
0
20
40
60
80
45
100
0
20
40
Frequency (MHz)
Figure 10. RMS Period Jitter vs Frequency
2.5 V
2.8 V
3.0 V
3.3 V
2.5
2.5
2.0
2.0
1.5
1.0
100
1.8 V
2.5 V
0
20
2.8 V
3.0 V
3.3 V
1.5
1.0
0.5
0.5
0.0
0.0
-40
-20
0
20
40
60
80
100
-40
120
Temperature (°C)
Figure 12. 20%-80% Rise Time vs Temperature
Rev 1.7
80
Figure 11. Duty Cycle vs Frequency
Fall time (ns)
Rise time (ns)
1.8 V
60
Frequency (MHz)
-20
40
60
80
100
120
Temperature (°C)
Figure 13. 20%-80% Fall Time vs Temperature
Page 5 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Performance Plots[10]
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
1.8 V
2.5 V
3.0 V
2.8 V
3.3 V
1.0
2.0
1.9
0.9
1.8
0.8
1.6
IPJ (ps)
IPJ (ps)
1.7
1.5
1.4
1.3
0.7
0.6
0.5
1.2
0.4
1.1
1.0
10
20
30
40
50
60
70
80
90
100
110
0.3
10
Frequency (MHz)
20
30
40
50
60
70
80
90
100
110
Frequency (MHz)
Figure 14. RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency[11]
Figure 15. RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency[11]
Notes:
10. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz.
Rev 1.7
Page 6 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Programmable Drive Strength
The SiT8924 includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the
clock rise/fall time for specific applications. Benefits from
the programmable drive strength feature are:
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time.
Improves the downstream clock receiver’s (RX) jitter by
decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates.
The SiT8924 can support up to 60 pF in maximum
capacitive loads with drive strength settings. Refer to the
Rise/Tall Time Tables (Table 7 to Table 11) to determine
the proper drive strength for the desired combination of
output load vs. rise/fall time.
SiT8924 Drive Strength Selection
Tables 7 through 11 define the rise/fall time for a given
capacitive load and supply voltage.
1. Select the table that matches the SiT8924 nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the
application requirement (5 pF to 60 pF)
For more detailed information about rise/fall time control
and drive strength selection, see the SiTime Application
Notes section.
3. Under the capacitive load column, select the desired
rise/fall times.
EMI Reduction by Slowing Rise/Fall Time
Figure 16 shows the harmonic power reduction as the
rise/fall times are increased (slowed down). The rise/fall
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a square wave. For
the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show
that the 11th clock harmonic can be reduced by 35 dB if
the rise/fall edge is increased from 5% of the period to
45% of the period.
4. The left-most column represents the part number
code for the corresponding drive strength.
5. Add the drive strength code to the part number for
ordering purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 7
through 11, the maximum frequency the oscillator can
operate with guaranteed full swing of the output voltage
over temperature can be calculated as follows:
Max Frequency =
1
5 x Trf_20/80
where Trf_20/80 is the typical value for 20%-80% rise/fall
time.
Example 1
Calculate fMAX for the following condition:
Figure 16. Harmonic EMI reduction as a Function
of Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up
the rise/fall time of the input clock. Some chipsets may
also require faster rise/fall time in order to reduce their
sensitivity to this type of jitter. Refer to the Rise/Fall Time
Tables (Table 7 to Table 11) to determine the proper drive
strength.
Vdd = 1.8V (Table 7)
Capacitive Load: 30 pF
Desired Tr/f time = 3 ns
(rise/fall time part number code = E)
Part number for the above example:
SiT8924BIE12-18E-66.666660
Drive strength code is inserted here. Default setting is “-”
High Output Load Capability
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strength, the rise/fall time becomes slower as the
output load increases. As an example, for a 3.3V SiT8924
device with default drive strength setting, the typical
rise/fall time is 1 ns for 15 pF output load. The typical
rise/fall time slows down to 2.6 ns when the output load
increases to 45 pF. One can choose to speed up the rise/fall
time to 1.83 ns by then increasing the drive strength setting
on the SiT8924.
Rev 1.7
Page 7 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD
Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
L
A
5 pF
6.16
3.19
15 pF
11.61
6.35
30 pF
22.00
11.00
45 pF
31.27
16.01
60 pF
39.91
21.52
Drive Strength \ CLOAD
L
A
5 pF
4.13
2.11
15 pF
8.25
4.27
30 pF
12.82
7.64
45 pF
21.45
11.20
60 pF
27.79
14.49
R
B
T
E
U
F or "‐": default
2.11
1.65
0.93
0.78
0.70
0.65
4.31
3.23
1.91
1.66
1.48
1.30
7.65
5.79
3.32
2.94
2.64
2.40
10.77
8.18
4.66
4.09
3.68
3.35
14.47
11.08
6.48
5.74
5.09
4.56
R
B
T
E or "‐": default
U
F
1.45
1.09
0.62
0.54
0.43
0.34
2.81
2.20
1.28
1.00
0.96
0.88
5.16
3.88
2.27
2.01
1.81
1.64
7.65
5.86
3.51
3.10
2.79
2.54
9.88
7.57
4.45
4.01
3.65
3.32
Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD
Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
3.77
7.54
12.28
19.57
25.27
L
3.60
7.21
11.97
18.74
24.30
A
R
B
1.94
1.29
0.97
3.90
2.57
2.00
7.03
4.72
3.54
10.24
7.01
5.43
13.34
9.06
6.93
1.84
1.22
0.89
3.71
2.46
1.92
6.72
4.54
3.39
9.86
6.76
5.20
12.68
8.62
6.64
T
0.55
1.12
2.08
3.22
4.08
E or "‐": default
U
F
0.44
0.34
0.29
1.00
0.88
0.81
1.83
1.64
1.48
2.82
2.52
2.29
3.67
3.30
2.99
A
R
B
T or "‐": default
E
U
F
0.51
0.38
0.30
1.00
0.92
0.83
1.97
1.72
1.55
3.07
2.71
2.40
3.90
3.51
3.13
0.27
0.76
1.39
2.16
2.85
Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
3.39
6.88
11.63
17.56
23.59
A
R
B
1.74
1.16
0.81
3.50
2.33
1.82
6.38
4.29
3.22
8.98
6.04
4.52
12.19
8.34
6.33
T or "‐": default
E
U
F
0.46
0.33
0.28
0.25
1.00
0.87
0.79
0.72
1.86
1.64
1.46
1.31
2.60
2.30
2.05
1.83
3.84
3.35
2.93
2.61
Rev 1.7
Page 8 of 19
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SiT8924B Automotive AEC-Q100 Oscillator
Pin 1 Configuration Options
(OE, ST , or NC)
Pin 1 of the SiT8924 can be factory-programmed to
support three modes: Output enable (OE), standby ST
̅ ̅̅
or No Connect (NC). These modes can also be programmed
with the Time Machine II using Field Programmable
Oscillators.
In addition, the SiT8924 supports “no runt” pulses and “no
glitch” output during startup or when the device output
driver is enabled as shown in the waveform captures in
Figure 17 and Figure 18.
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only
disables the output driver and puts it in Hi-Z mode. The
core of the device continues to operate normally. Power
consumption is reduced due to the inactivity of the output.
When the OE pin is pulled High, the output is typically
enabled in