NSi8140/NSi8141/NSi8142: High Reliabilit
y Quad-Channel Digital Isolators
NOVOSENSE
Datasheet (EN) 1.4
Product Overview
The NSi814x devices are high reliability quad-channel
digital isolators. The NSi814x device is safety certified by
UL1577 support several insulation withstand voltages
(3.75kVrms, 5kVrms), while providing high electromagnetic
immunity and low emissions at low power consumption.
The data rate of the NSi814x is up to 150Mbps, and the
common-mode transient immunity (CMTI) is up to
150kV/us. The NSi814x device provides digital channel
direction configuration and the default output level
configuration when the input power is lost. Wide supply
voltage of the NSi814x device support to connect with
most digital interface directly, easy to do the level shift.
High system level EMC performance enhance reliability
and stability of use. AEC-Q100 (Grade 1) option is provided
for all devices.
Key Features
Up to 5000Vrms Insulation voltage
Date rate: DC to 150Mbps
Power supply voltage: 2.5V to 5.5V
AEC-Q100 Grade 1 available for all devices
High CMTI: 150kV/us
Chip level ESD: HBM: ±6kV
Safety Regulatory Approvals
UL recognition: up to 5000Vrms for 1 minute per UL1577
CQC certification per GB4943.1-2011
CSA component notice 5A
DIN VDE V 0884-11:2017-01
Applications
Industrial automation system
Isolated SPI, RS232, RS485
General-purpose multichannel isolation
Motor control
Functional Block Diagrams
High system level EMC performance:
Enhanced system level ESD, EFT, Surge immunity
Default output high level or low level option
Isolation barrier life: >60 years
Low power consumption: 1.5mA/ch (1 Mbps)
Low propagation delay: 400
Ⅱ
Material Group
3.2. DIN VDE V 0884-11(VDE V 0884-11):2017-01 INSULATION CHARATERISTICS
Description
Test Condition
Symbol
Value
NB-SOIC16
Unit
WB-SOIC16
Installation Classification per DIN VDE
0110
For Rated Mains Voltage ≤ 150Vrms
Ⅰto Ⅳ
Ⅰto Ⅳ
For Rated Mains Voltage ≤ 300Vrms
Ⅰto Ⅲ
Ⅰto Ⅳ
Copyright © 2019, NOVOSENSE
Page 12
NSi8140/NSi8141/NSi8142
For Rated Mains Voltage ≤ 400Vrms
Ⅰto Ⅲ
Climatic Classification
10/105/2
1
Pollution Degree per DIN VDE 0110,
2
Ⅰto Ⅳ
10/105/2
1
2
Table 1
Maximum repetitive peak isolation
voltage
Maximum working isolation voltage
AC voltage
VIORM
565
1166
Vpeak
VIOWM
400
824
VRMS
565
1166
Vpeak
V pd (m)
847
1749
Vpeak
DC voltage
Input to Output Test Voltage, Method
B1
V IORM × 1. 5 = V pd (m) , 100%
production test,
t ini = t m = 1 sec, partial
discharge < 5 pC
Input to Output Test Voltage, Method
A
After Environmental Tests Subgroup 1
V IORM × 1.2 = V pd (m) , t ini = 60
sec, t m = 10 sec, partial
discharge < 5 pC
V pd (m)
678
1399
Vpeak
After Input and /or Safety Test
Subgroup 2 and Subgroup 3
V IORM × 1.2= V pd (m) , t ini = 60
sec, t m = 10 sec, partial
discharge < 5 pC
V pd (m)
678
1399
Vpeak
t = 60 sec
VIOTM
5300
7000
Vpeak
Test method per
IEC60065,1.2/50us
waveform,
VTEST=VIOSM×1.3
VIOSM
5384
5384
Vpeak
VIO =500V
RIO
>109
>109
Ω
f = 1MHz
CIO
0.6
0.6
pF
Input capacitance
CI
2
2
pF
Total Power Dissipation at 25℃
Ps
1499
W
Maximum transient isolation voltage
Maximum Surge Isolation Voltage
Isolation resistance
Isolation capacitance
θJA = 140 °C/W, V I = 5.5 V, T
J = 150 °C, T A = 25 °C
Safety input, output, or supply current
160
Is
θJA = 84 °C/W, V I = 5.5 V, T J
= 150 °C, T A = 25 °C
Case Temperature
Copyright © 2019, NOVOSENSE
mA
Ts
150
237
mA
150
℃
Page 13
Saftey Limiting Current
(mA)
NSi8140/NSi8141/NSi8142
180
160
140
120
100
80
60
40
20
0
0
50
100
150
200
Case Temperature (℃)
Saftey Limiting Current
(mA)
Figure 3.1 NSi8140N/NSi8141N/NSi8142N Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
250
200
150
100
50
0
0
50
100
150
200
Case Temperature (℃)
Figure 3.2 NSi8140W/NSi8141W/NSi8142W Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
3.3. REGULATORY INFORMATION
The NSi8140N/NSi8141N/NSi8142N are approved or pending approval by the organizations listed in table.
CUL
UL 1577 Component
Recognition Program1
Single Protection, 3750Vrms
Isolation voltage
Approved under CSA Component
Acceptance Notice 5A
CQC
DIN VDE V 088411(VDE V 088411):2017-012
Certified by CQC11471543-2012
Single Protection, 3750Vrms Isolation
voltage
Basic Insulation
565Vpeak,
VIOSM=5384Vpeak
Basic insulation at
400Vrms (565Vpeak)
File (E500602)
File (5024579-48800001)
File (E500602)
1
VDE
GB4943.1-2011
File (pending)
In accordance with UL 1577, each NSi8140N/NSi8141N/NSi8142N is proof tested by applying an insulation test voltage ≥ 4500 V rms for 1 sec.
2
In accordance with DIN VDE V 0884-11, each NSi8140N/NSi8141N/NSi8142N is proof tested by applying an insulation test voltage ≥ 847 V peak for 1 sec
(partial discharge detection limit = 5 pC). The * marking branded on the component designates DIN VDE V 0884-11 approval.
The NSi8140W/NSi8141W/NSi8142W are approved or pending approval by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program1
Copyright © 2019, NOVOSENSE
VDE
Approved under CSA
Component Acceptance Notice
5A
DIN VDE V 088411(VDE V 088411):2017-012
CQC
Certified by CQC11471543-2012
GB4943.1-2011
Page 14
NSi8140/NSi8141/NSi8142
Single Protection, 5000Vrms Isolation
voltage
Single Protection, 5000Vrms
Isolation voltage
File (E500602)
1
Basic Insulation
1166Vpeak,
VIOSM=5384Vpeak
File (E500602)
File (5024579-48800001)
Basic insulation at
824VRMS (1166Vpeak)
Reinforced insulation at
400VRMS (565Vpeak)
File (pending)
In accordance with UL 1577, each NSi8140W/NSi8141W/NSi8142W is proof tested by applying an insulation test voltage ≥ 6000 V rms for 1 sec.
2
In accordance with DIN VDE V 0884-11, each NSi8140W/NSi8141W/NSi8142W is proof tested by applying an insulation test voltage ≥ 1749 V peak for 1 sec
(partial discharge detection limit = 5 pC). The * marking branded on the component designates DIN VDE V 0884-11 approval.
4.0
FUNCTION DESCRIPTION
The NSi814x is a Quad-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF
carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and
demodulated at the Receiver side.
The NSi814x devices are high reliability quad-channel digital isolator with AEC-Q100 qualified. The NSi814x device is safety certified by
UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low
emissions at low power consumption. The data rate of the NSi814x is up to 150Mbps, and the common-mode transient immunity (CMTI)
is up to 150kV/us. The NSi814x device provides digital channel direction configuration and the default output level configuration when
the input power is lost. Wide supply voltage of the NSi814x device support to connect with most digital interface directly, easy to do the
level shift. High system level EMC performance enhance reliability and stability of use.
The NSi814x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 4.1, which helps for diagnosis
when power is missing at the transmitter side. The output B follows the same status with the input A within 60us after powering up.
Isolation
barrier
VIN
TX signal
cinditioning
PWM
RX signal
cinditioning
envelope
detection
VOUT
EN
OSC
Figure 4.1 Simplified Channel Diagram
Table 4.1 Output status vs. power status
Input
ENX
VDD1
status
VDD2
status
Output
Comment
H
H or NC
Ready
Ready
H
Normal operation.
L
H or NC
Ready
Ready
L
X
L
Ready
Ready
Z
Output Disabled, the output is high impedance
X
H or NC
Unready
Ready
L
H
The output follows the same status with the input within
60us after input side VDD1 is powered on.
X
L
Unready
Ready
Z
Output Disabled, the output is high impedance
X
X
Ready
Unready
X
The output follows the same status with the input within
60us after output side VDD2 is powered on.
Copyright © 2019, NOVOSENSE
Page 15
NSi8140/NSi8141/NSi8142
5.0
APPLICATION NOTE
5.1. PCB LAYOUT
The NSi814x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as
possible to the package. Figure 5.1 show the recommended schematic diagram , Figure 5.2 to Figure 5.3 show the recommended PCB
layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design,
the user may also include resistors (50–300 Ω ) in series with the inputs and outputs if the system is excessively noisy. The series resistors
also improve the system reliability such as latch-up immunity.
The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line
effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
VDD1
VDD2
1 VDD1
VDD2 16
2 GND1
GND2 15
100nF
100nF
A2
14
B1
B2
13
C1
C2
12
D1
D2
11
3
A1
4
5
6
50R
50R
7 EN1
8 GND1
EN2 10
GND2 9
Figure5.1 Recommended schematic diagram
Figure5.2 Recommended PCB Layout — Top Layer
Figure5.3 Recommended PCB Layout — Bottom Layer
5.2. HIGH SPEED PERFORMANCE
Figure 5.4 shows the eye diagram of NSi814x at 200Mbps data rate output. The result shows a typical measurement on the NSi814x
with 350ps p-p jitter.
Copyright © 2019, NOVOSENSE
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NSi8140/NSi8141/NSi8142
Figure5.4 NSi814x Eye Diagram
5.3. TYPICAL SUPPLY CURRENT EQUATIONS
The typical supply current of NSi814x can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA,
f is data rate measured in Mbps, CL is the capacitive load measured in pF
NSi8140:
IDD1 = 0.19 *a1+1.45*b1+0.82*c1.
IDD2 = 1.36+ VDD1*f* CL *c1*10-9
When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of
switch signal input at side 1.
NSi8141:
IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9
IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9
When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel
number of high input at side 2, c2 is the channel number of switch signal input at side 2.
NSi8142:
IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9
IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9
When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel
number of high input at side 2, c2 is the channel number of switch signal input at side 2.
Copyright © 2019, NOVOSENSE
Page 17
NSi8140/NSi8141/NSi8142
6.0
PACKAGE INFORMATION
VDD1 1
16 VDD2
VDD1 1
16 VDD2
VDD1 1
16 VDD2
GND1 2
15 GND2
GND1 2
15 GND2
GND1 2
15 GND2
INA 3
14 OUTA
INA 3
14 OUTA
INA 3
14 OUTA
INB 4
13 OUTB
INB 4
13 OUTB
INB 4
13 OUTB
INC 5
12 OUTC
INC 5
12 OUTC
OUTC 5
12 INC
IND 6
11 OUTD
OUTD 6
11 IND
OUTD 6
11 IND
EN1 7
10 EN2
EN1 7
10 EN2
10 EN2
NC 7
GND1 8
NSi8140 9 GND2
GND1 8
Figure 6.1 NSi8140N Package
NSi8141 9 GND2
Figure 6.2 NSi8141N Package
GND1 8
NSi8142 9 GND2
Figure 6.3 NSi8142N Package
Figure 6.4 NB SOIC16 Package Shape and Dimension in millimeters (inches)
Table6.1 NSi8140N/ NSi8141N/ NSi8142N Pin Configuration and Description
NSi8140N
PIN NO.
NSi8141N
PIN NO.
NSi8142N
PIN NO.
SYMBOL
FUNCTION
1
1
1
VDD1
Power Supply for Isolator Side 1
2
2
2
GND1
Ground 1, the ground reference for Isolator Side 1
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NSi8140/NSi8141/NSi8142
3
3
3
INA
Logic Input A
4
4
4
INB
Logic Input B
5
5
12
INC
Logic Input C
6
11
11
IND
Logic Input D
7
7
7
NC/ EN1
No Connection. or
Output Enable 1. Active high logic input. When EN1 is high or NC,
the output of Side 1 are enabled. When EN1 is low, the output of
Side 1 are disabled to high impedance state.
8
8
8
GND1
Ground 1, the ground reference for Isolator Side 1
9
9
9
GND2
Ground 2, the ground reference for Isolator Side 2
10
10
10
EN2
Output Enable 2. Active high logic input. When EN2 is high or NC,
the output of Side 2 are enabled. When EN2 is low, the output of
Side 2 are disabled to high impedance state.
11
6
6
OUTD
Logic Output D
12
12
5
OUTC
Logic Output C
13
13
13
OUTB
Logic Output B
14
14
14
OUTA
Logic Output A
15
15
15
GND2
Ground 2, the ground reference for Isolator Side 2
16
16
16
VDD2
Power Supply for Isolator Side 2
VDD1 1
16 VDD 2
GND 1 2
15 GND 2
VDD1 1
GND1 2
16 VDD2
VDD1 1
16 VDD 2
15 GND2
GND 1 2
15 GND 2
14 OUTA
13 OUTB
INA 3
14 OUTA
INA 3
14 OUTA
INA 3
INB 4
13 OUTB
INB 4
13 OUTB
INB 4
INC 5
12 OUTC
INC 5
12 OUTC
OUTC 5
12 INC
IND 6
11 OUTD
OUTD 6
11 IND
OUTD 6
11 IND
EN1 7
10 EN2
EN 1 7
10 EN 2
10 EN2
NC 7
GND 1 8
NSi8140
9 GND2
Figure 6.5 NSi8140W Package
Copyright © 2019, NOVOSENSE
GND1 8
NSi8141
9 GND 2
Figure 6.6 NSi8141W Package
GND1 8
NSi8142
9 GND2
Figure 6.7 NSi8142W Package
Page 19
NSi8140/NSi8141/NSi8142
Figure 6.8 WB SOIC16 Package Shape and Dimension in millimeters and (inches)
Table 6.2 NSi8140W/ NSi8141W/ NSi8142W Pin Configuration and Description
NSi8140W
PIN NO.
NSi8141W
PIN NO.
NSi8142W
PIN NO.
SYMBOL
FUNCTION
1
1
1
VDD1
Power Supply for Isolator Side 1
2
2
2
GND1
Ground 1, the ground reference for Isolator Side 1
3
3
3
INA
Logic Input A
4
4
4
INB
Logic Input B
5
5
12
INC
Logic Input C
6
11
11
IND
Logic Input D
7
7
7
NC/ EN1
No Connection. or
Output Enable 1. Active high logic input. When EN1 is high or NC,
the output of Side 1 are enabled. When EN1 is low, the output of
Side 1 are disabled to high impedance state.
8
8
8
GND1
Ground 1, the ground reference for Isolator Side 1
9
9
9
GND2
Ground 2, the ground reference for Isolator Side 2
10
10
10
EN2
Output Enable 2. Active high logic input. When EN2 is high or NC,
the output of Side 2 are enabled. When EN2 is low, the output of
Side 2 are disabled to high impedance state.
11
6
6
OUTD
Logic Output D
Copyright © 2019, NOVOSENSE
Page 20
NSi8140/NSi8141/NSi8142
7.0
12
12
5
OUTC
Logic Output C
13
13
13
OUTB
Logic Output B
14
14
14
OUTA
Logic Output A
15
15
15
GND2
Ground 2, the ground reference for Isolator Side 2
16
16
16
VDD2
Power Supply for Isolator Side 2
ORDER INFORMATION
Part No.
Isolati
on
Rating
(kV)
Numb
er of
side 1
inputs
Numb
er of
side 2
inputs
Max Data
Rate
(Mbps)
Default
Output
State
MSL
level
Temperature
Auto
moti
ve
Package
Qty
Package
NSi8140N0
3.75
4
0
150
Low
1
-40 to 125℃
NO
2500
NB SOIC16
NSi8140N1
3.75
4
0
150
High
1
-40 to 125℃
NO
2500
NB SOIC16
NSi8141N0
3.75
3
1
150
Low
1
-40 to 125℃
NO
2500
NB SOIC16
NSi8141N1
3.75
3
1
150
High
1
-40 to 125℃
NO
2500
NB SOIC16
NSi8142N0
3.75
2
2
150
Low
1
-40 to 125℃
NO
2500
NB SOIC16
NSi8142N1
3.75
2
2
150
High
1
-40 to 125℃
NO
2500
NB SOIC16
NSi8140W0
5
4
0
150
Low
2
-40 to 125℃
NO
1000
WB SOIC16
NSi8140W1
5
4
0
150
High
2
-40 to 125℃
NO
1000
WB SOIC16
NSi8141W0
5
3
1
150
Low
2
-40 to 125℃
NO
1000
WB SOIC16
NSi8141W1
5
3
1
150
High
2
-40 to 125℃
NO
1000
WB SOIC16
NSi8142W0
5
2
2
150
Low
2
-40 to 125℃
NO
1000
WB SOIC16
NSi8142W1
5
2
2
150
High
2
-40 to 125℃
NO
1000
WB SOIC16
NSi8140W0Q
5
4
0
150
Low
2
-40 to 125℃
YES
1000
WB SOIC16
NSi8140W1Q
5
4
0
150
High
1
-40 to 125℃
YES
1000
WB SOIC16
NSi8141W0Q
5
3
1
150
Low
1
-40 to 125℃
YES
1000
WB SOIC16
NSi8141W1Q
5
3
1
150
High
1
-40 to 125℃
YES
1000
WB SOIC16
NSi8142W0Q
5
2
2
150
Low
1
-40 to 125℃
YES
1000
WB SOIC16
NSi8142W1Q
5
2
2
150
High
1
YES
1000
WB SOIC16
-40 to 125℃
NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard
classifications and peak solder temperatures.
All devices are AEC-Q100 qualified.
Part Number Rule:
Copyright © 2019, NOVOSENSE
Page 21
NSi8140/NSi8141/NSi8142
NSi(81)(4)(1)(N)(1)(Q)
Series Number
Total Channel Amount:
N=N Channels N=1,2,4…
N=0: I2C Part
Reverse Channel Amount:
N=N Channels N=0,1,2…
8.0
Q = Automotive version
Fail-Safe Output State:
0 = Logic Low
1 = Logic High
Package Type:
N= NB SOIC16
W= WB SOIC16
TAPE AND REEL INFORMATION
Copyright © 2019, NOVOSENSE
Page 22
NSi8140/NSi8141/NSi8142
Figure 8.1 Tape and Reel Information of WB SOIC16
Copyright © 2019, NOVOSENSE
Page 23
NSi8140/NSi8141/NSi8142
Figure 8.2 Tape and Reel Information of NB SOIC16
9.0
REVISION HISTORY
Revision
1.0
1.1
1.2
1.3
1.4
Description
1.5
Change NSi8140 IDD1(Q0) MAX value
Add maximum operation current spec.
Change to ordering information
Change Certification Information
Add Thermal characteristics, MSL level,Recommended schematic
diagram,Simplified Channel Diagram;
change Package Shape and Dimension in millimeters and (inches)
add recommended operation recommEnded operating conditions
Copyright © 2019, NOVOSENSE
Date
2017/11/15
2018/10/12
2018/12/20
2019/06/17
2020/2/11
2020/4/17
Page 24