BLP0427M9S20;
BLP0427M9S20G
Power LDMOS transistor
Rev. 2 — 16 July 2021
Product data sheet
1. Product profile
1.1 General description
20 W plastic LDMOS power transistor for general purpose applications at frequencies
from 400 MHz to 2700 MHz.
Table 1.
Application performance (multiple frequencies)
Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on
gull wing lead device.
f
IDq
VDS
PL(AV)
PL(1dB)
Gp
D
(MHz)
(mA)
(V)
(dBm)
(dBm)
(dB)
(%)
pulsed
960 to 1215
100
28
-
43
17
>55
1-carrier
1805 to 1880
180
28
35
-
19
21
CW
30 to 512
150
28
-
43
19
>50
Test signal
Table 2.
Application performance
Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq = 100 mA; tp = 300 s; = 10 %; in a
class-AB demo board, tested on straight lead device.
Test signal
pulsed RF
f
PL
Gp
PL(1dB)
D
RLin
(MHz)
(dBm)
(dB)
(dBm)
(%)
(dB)
1200 to 1400
43
19
43
63
9
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
Radars & avionics
Communications
Broadcast transmitter applications
Industrial, scientific and medical applications
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLP0427M9S20 (SOT1482-1)
1
drain
2
gate
3
source
2
[1]
1
3
2
1
3
sym112
BLP0427M9S20G (SOT1483-1)
1
drain
2
gate
3
source
2
[1]
1
3
2
3
1
[1]
sym112
Connected to flange.
3. Ordering information
Table 4.
Ordering information
Package name
Orderable part number
12NC
Packing description
Min. orderable
quantity (pieces)
SOT1482-1
BLP0427M9S20Z
9349 601 09515 TR13; 500-fold; 24 mm; dry pack
500
BLP0427M9S20XY
9349 601 09538 TR7; 100-fold; 24 mm; dry pack
100
SOT1483-1
BLP0427M9S20GZ
9349 601 08515 TR13; 500-fold; 24 mm; dry pack
500
BLP0427M9S20GXY
9349 601 08538 TR7; 100-fold; 24 mm; dry pack
100
4. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
5
+13
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
5. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Rth(j-c)
Conditions
thermal resistance from junction to case Tcase = 80 C; PL = 3 W
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
Typ
Unit
1.1
K/W
© Ampleon Netherlands B.V. 2021. All rights reserved.
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BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
6. Characteristics
Table 7.
DC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.3 mA
Typ
Max
Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 30 mA
1.5
2.0
-
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 180 mA
1.6
2.1
2.6
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V
-
6
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 30 mA
-
300
-
mS
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 1.05 A
-
500
-
m
Table 8.
RF characteristics
A derivative functional RF test is performed in production. The performance as mentioned below is
verified by design and characterization in a class AB production board.
Test signal: pulsed CW; = 10%; tp = 100 s; VDS = 28 V; IDq = 180 mA; Tcase = 25 C;
f = 1842.5 MHz.
Symbol Parameter
Conditions
Min Typ
Max Unit
Gp
power gain
PL(AV) = 35 dBm
17
19
-
dB
D
drain efficiency
PL(AV) = 35 dBm
18
22
-
%
RLin
input return loss
PL(AV) = 35 dBm
-
10
6
dB
PL(1dB)
output power at 1 dB gain compression
-
42.5 -
dBm
PL(3dB)
output power at 3 dB gain compression
-
43
dBm
-
7. Test information
7.1 Ruggedness in Doherty operation
The BLP0427M9S20 and BLP0427M9S20G are capable of withstanding a load mismatch
corresponding to a VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; PL = 20 W (CW); f = 728 MHz and 1805 MHz on development board.
7.2 Impedance information
Table 9.
Typical impedance of BLP0427M9S20G
Measured load-pull data; IDq = 180 mA; VDS = 28 V.
f
ZS [1]
ZL [1]
PL [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
740
0.5 + j0.1
10.6 j1.0
37
55.1
22.8
880
0.6 j1.4
3.8 + j2.0
49
70.9
22.8
1810
1.6 j5.5
3.4 j1.0
43
62.2
19.0
1840
1.3 j5.8
3.0 j1.2
43
62.7
19.1
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
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BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Table 9.
Typical impedance of BLP0427M9S20G …continued
Measured load-pull data; IDq = 180 mA; VDS = 28 V.
f
ZS [1]
ZL [1]
PL [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
1880
1.3 j6.2
2.6 j1.5
42
61.2
18.7
2110
5.3 j9.6
2.6 j2.5
41
58.2
17.7
2170
6.2 j8.1
2.6 j2.5
41
60.4
18.2
Maximum drain efficiency load
740
0.5 + j0.1
6.0 + j10.0
20
74.1
24.8
880
0.6 j1.4
3.7 + j5.9
26
82.7
24.7
1810
1.6 j5.5
1.9 + j0.2
31
70.9
20.9
1840
1.3 j5.8
1.7 + j0.0
29
69.8
21.3
1880
1.3 j6.2
1.6 j0.2
28
69.8
21.3
2110
5.3 j9.6
1.7 j1.5
32
65.6
19.5
2170
6.2 j8.1
1.6 j1.7
30
65.9
20.2
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
Table 10. Typical impedance of BLP0427M9S20
Measured load-pull data; IDq = 180 mA; VDS = 28 V.
f
ZS [1]
ZL [1]
PL [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
740
0.6 + j0.6
10.6 j1.0
39
56.8
22.7
880
0.6 j0.7
4.0 + j1.6
51
70.9
22.1
1810
1.8 j5.4
3.0 j1.2
44
60.9
19.1
1840
1.6 j5.8
3.0 j1.2
44
62.6
19.6
1880
1.8 j6.1
2.9 j1.6
44
60.9
19.1
2110
7.3 j8.2
2.6 j2.5
41
57.7
17.8
2170
8.7 j6.8
2.6 j2.5
43
62.1
18.7
Maximum drain efficiency load
740
0.6 + j0.6
6.0 + j10.0
22
77.0
24.6
880
0.6 j0.7
3.7 + j5.9
26
85.3
24.4
1810
1.8 j5.4
1.9 + j0.0
33
69.4
20.9
1840
1.6 j5.8
1.9 + j0.0
31
69.4
21.7
1880
1.8 j6.1
1.8 j0.2
32
70.7
21.6
2110
7.3 j8.2
1.5 j1.4
30
65.3
19.9
2170
8.7 j6.8
1.4 j1.6
29
69.3
21.3
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
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BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
76.2 mm
C6
C1
C7
C8
C10
C9
C2
40 mm
R1
C11
C12
C13
C3
C4
C5
%/30 6* 700MHz
Rogers 4350 20mil
amp00
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.508 mm.
See Table 11 for a list of components.
Fig 2.
Component layout for test circuit at 740 MHz
Table 11. List of components
See Figure 2 for component layout.
Component
Description
C1, C7, C8, C9
multilayer ceramic chip capacitor
10 F, 50 V
Murata
C2, C3, C10, C11
multilayer ceramic chip capacitor
36 pF
ATC 600F
C4, C5
multilayer ceramic chip capacitor
15 pF
ATC 600F
C6
electrolytic capacitor
2200 F, 50 V
C12
multilayer ceramic chip capacitor
5.6 pF
ATC 600F
C13
multilayer ceramic chip capacitor
0.2 pF
ATC 600F
R1
resistor
5.1
SMD 0805
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
Value
Remarks
© Ampleon Netherlands B.V. 2021. All rights reserved.
5 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
76.2 mm
C8
C1 C2
C3
C9
C10
C4
C11
C5 R1
C6
40 mm
C12
C13
C14
C15 %/30 6* 1800MHz
C16
Rogers 4350 20mil
C7
amp00
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.508 mm.
See Table 12 for a list of components.
Fig 3.
Component layout for test circuit at 1800 MHz
Table 12. List of components
See Figure 3 for component layout.
Component
Description
Value
Remarks
C1, C9, C10
multilayer ceramic chip capacitor
10 F, 50 V
Murata
C2, C3, C11, C13
multilayer ceramic chip capacitor
12 pF
ATC 600F
C4, C5
multilayer ceramic chip capacitor
0.8 pF
ATC 600F
C6
multilayer ceramic chip capacitor
6.2 pF
ATC 600F
C7
multilayer ceramic chip capacitor
2 pF
ATC 600F
C8
electrolytic capacitor
2200 F, 50 V
C12, C15
multilayer ceramic chip capacitor
0.3 pF
ATC 600F
C14
multilayer ceramic chip capacitor
2.2 pF
ATC 600F
C16
multilayer ceramic chip capacitor
0.3 pF
ATC 600F
R1
resistor
5.1
SMD 0805
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
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6 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
76.2 mm
C6
C1 C2
C3
C7 C8
R1
C4
40 mm
C5
C9
C10
C11
C12 %/30 6* 2100MHz
Rogers 4350 20mil
DPS
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.508 mm.
See Table 13 for a list of components.
Fig 4.
Component layout for test circuit at 2100 MHz
Table 13. List of components
See Figure 4 for component layout.
Component
Description
Value
Remarks
C1, C8
multilayer ceramic chip capacitor
10 F, 50 V
Murata
C2, C7, C10
multilayer ceramic chip capacitor
12 pF
ATC 600F
C3
multilayer ceramic chip capacitor
62 pF
ATC 600F
C4
multilayer ceramic chip capacitor
5.6 pF
ATC 600F
C5
multilayer ceramic chip capacitor
0.5 pF
ATC 600F
C6
electrolytic capacitor
2200 F, 50 V
C9
multilayer ceramic chip capacitor
2.2 pF
ATC 600F
C11
multilayer ceramic chip capacitor
1.2 pF
ATC 600F
C12
multilayer ceramic chip capacitor
1.8 pF
ATC 600F
R1
resistor
5.1
SMD 0805
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
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7 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
7.4 Graphical data
7.4.1 CW
amp00289
27
80
Gp
(dB)
(1)
(2)
ηD
(%)
60
21
(1)
(2)
40
19
60
(1)
(2)
Gp
23
80
Gp
(dB)
ηD
(%)
25
amp00290
23
Gp
40
(1)
(2)
21
20
17
20
ηD
ηD
19
0
0
5
10
15
20
25
30
35
PL (W)
15
40
0
0
VDS = 28 V; IDq = 180 mA.
5
10
20
25
30
35
PL (W)
40
VDS = 28 V; IDq = 180 mA.
(1) f = 728 MHz
(1) f = 1805 MHz
(2) f = 768 MHz
(2) f = 1880 MHz
Fig 5.
15
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Power gain and drain efficiency as function of
output power; typical values
amp00291
22
80
Gp
(dB)
ηD
(%)
20
60
(1)
(2)
Gp
18
40
(1)
(2)
16
20
ηD
14
0
0
5
10
15
20
25
30
35
PL (W)
40
VDS = 28 V; IDq = 180 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 7.
Power gain and drain efficiency as function of output power; typical values
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
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8 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
7.4.2 Pulsed CW
amp00292
27
Gp
(dB)
80
(1)
(2)
25
amp00293
23
80
Gp
(dB)
ηD
(%)
ηD
(%)
60
21
40
19
(1)
(2)
60
Gp
Gp
23
(1)
(2)
40
(1)
(2)
21
20
17
20
ηD
ηD
19
0
0
5
10
15
20
25
30
35
PL (W)
15
40
0
0
VDS = 28 V; IDq = 180 mA.
5
10
20
25
30
35
PL (W)
40
VDS = 28 V; IDq = 180 mA.
(1) f = 728 MHz
(1) f = 1805 MHz
(2) f = 768 MHz
(2) f = 1880 MHz
Fig 8.
15
Power gain and drain efficiency as function of
output power; typical values
Fig 9.
Power gain and drain efficiency as function of
output power; typical values
amp00294
22
80
Gp
(dB)
ηD
(%)
(1)
(2)
20
60
Gp
18
40
(1)
(2)
16
20
ηD
14
0
0
5
10
15
20
25
30
35
PL (W)
40
VDS = 28 V; IDq = 180 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 10. Power gain and drain efficiency as function of output power; typical values
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
9 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
7.4.3 1-Carrier W-CDMA
amp00295
26
80
Gp
(dB)
amp00296
22
ηD
(%)
(1)
(2)
24
60
20
Gp
(1)
(2)
60
(1)
(2)
40
Gp
(1)
(2)
22
20
40
18
20
16
20
ηD
ηD
18
0
0
80
Gp
(dB)
ηD
(%)
1
2
3
4
5
6
7
PL (W)
14
8
0
0
VDS = 28 V; IDq = 180 mA.
1
2
3
4
5
6
7
PL (W)
8
VDS = 28 V; IDq = 180 mA.
(1) f = 728 MHz
(1) f = 1805 MHz
(2) f = 768 MHz
(2) f = 1880 MHz
Fig 11. Power gain and drain efficiency as function of
output power; typical values
Fig 12. Power gain and drain efficiency as function of
output power; typical values
amp00297
22
80
Gp
(dB)
ηD
(%)
20
60
Gp
(1)
(2)
18
40
(1)
(2)
16
20
ηD
14
0
0
1
2
3
4
5
6
7
PL (W)
8
VDS = 28 V; IDq = 180 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 13. Power gain and drain efficiency as function of output power; typical values
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
10 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
amp00298
-50
ACPR5M
(dBc)
amp00299
-30
ACPR5M
(dBc)
-54
-36
(2)
-58
(2)
-62
(1)
-42
(1)
-48
-66
-54
-70
-60
0
2
4
6
8
PL (W)
10
0
VDS = 28 V; IDq = 180 mA.
2
4
6
8
PL (W)
10
VDS = 28 V; IDq = 180 mA.
(1) f = 728 MHz
(1) f = 1805 MHz
(2) f = 768 MHz
(2) f = 1880 MHz
Fig 14. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 15. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
amp00300
-30
ACPR5M
(dBc)
-36
(2)
-42
(1)
-48
-54
-60
0
2
4
6
8
PL (W)
10
VDS = 28 V; IDq = 180 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 16. Adjacent channel power ratio (5 MHz) as a function of output power; typical values
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
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11 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
8. Package outline
SOT1482-1
0.24 B 0.025
L 0.25 A
L 0.2 B
B
6.1 (#1)
11.16 B0.1
1.57
1.78 B0.1 (#4)
0.5 B0.1
5.92
4.95 (#2)
#6
(1.2)
#6
PIN 1
(1)
1.04
10.67 B0.1 (#4)
A
2.03
#6
9.65 (#1)
(0.2)
3.8 min. 4.5 max.
Compound allowed
Flash/bleed allowed
hatched area (2x)
Exposed Heatsink
7.4 min. 8.7 max.
Package outline drawing:
units in mm.
Tolerances unless otherwise stated:
Revision:
Angle: B 1° Revision date:
Dimension: B 0.05
SOT1482-1
Third angle projection
6
1/4/2017
Sheet 1 of 2
Fig 17. Package outline SOT1482-1 (sheet 1 of 2)
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
12 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
SOT1482-1
Drawing Notes
Description
Items
Dimensions are excluding mold protrusion. The mold protrusion is maximum 0.15 mm per side. See also detail B.
(1)
In the dambar area max. protrusion is 0.55 mm. max. in length and 0.3 mm. max. in width (4x). See also detail B.
(2)
The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.
(3)
The leads and exposed heatsink are plated with matte Tin (Sn).
Dimensions (Heatsink ears) 10,67 and 1,78 do not include mouldprotrusion. Overall Max. dimensions incl. mould
(4)
protrusions is 10.92 mm. (max.) and 2.03 mm. (max.)
(5)
Lead coplanarity over the leads is 0,1 mm. maximum.
(6)
Surfaces may remain unplated (not solderable surfaces)
x.)
(0.3 ma
B
DETAIL B
SCALE 50 : 1
5
(0.
5m
)
ax .
Lead Dambar protrusion (#2)
)
ax. (#1
0.15 m
Package outline drawing:
units in mm.
Tolerances unless otherwise stated:
Revision:
Angle: B 1° Revision date:
Dimension: B 0.05
SOT1482-1
Third angle projection
6
1/4/2017
Sheet 2 of 2
Fig 18. Package outline SOT1482-1 (sheet 2 of 2)
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
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BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
SOT1483-1
0.24 B0.025
1.78 B0.10 (#4)
L 0.25 A
L 0.2 B
5.92
6.10 (#1)
B
8.13 B0.10
4.95 (#2)
1.57
0.50 B0.10
#5
#5
A
PIN 1
2.03
Gage Plane
(2.08)
DETAIL A
SCALE 25 : 1
#5
10.67 B0.10 (#4)
(0.20)
3.8 min. 4.5 max.
Compound allowed
0.43 - 0.63
9.65 (#1)
Seating Plane
A
0.25
0.00 - 0.10
2` - 8`
Flash/bleed allowed
hatched area (2x)
Exposed Heatsink
7.4 min. 8.7 max.
Package outline drawing:
units in mm.
Tolerances unless otherwise stated:
Revision:
Angle: B 1° Revision date:
Dimension: B 0.05
SOT1483-1
Third angle projection
7
2/21/2017
Sheet 1 of 2
Fig 19. Package outline SOT1483-1 (sheet 1 of 2)
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
14 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
SOT1483-1
Drawing Notes
Description
Items
Dimensions are excluding mold protrusion. The mold protrusion is maximum 0.15 mm per side. See also detail B.
(1)
In the dambar area max. protrusion is 0.55mm max. in lenght and 0.3 mm max. in width (4x) See also detail B.
(2)
The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.
(3)
The leads and exposed heatsink are plated with matte Tin (Sn).
Dimensions (Heatsink ears) 10,67 and 1,78 do not include mouldprotrusion. Overall Max. dimensions incl. mould
(4)
protrusions is 10,92 mm. (max.) and 2,03 mm. (max.).
(5)
Surfaces may remain unplated (not solderable surfaces).
DETAIL B
SCALE 50 : 1
x.)
(0.3 ma
B
5
(0.
5m
)
ax .
Lead Dambar protrusion (#2)
Package outline drawing:
units in mm.
)
ax. (#1
0.15 m
Tolerances unless otherwise stated:
Revision:
Angle: B 1° Revision date:
Dimension: B 0.05
SOT1483-1
Third angle projection
7
2/21/2017
Sheet 2 of 2
Fig 20. Package outline SOT1483-1 (sheet 2 of 2)
BLP0427M9S20_0427M9S20G
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Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
15 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 14.
ESD sensitivity
ESD model
Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
C2A [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
2 [2]
[1]
CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2]
HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
Table 15.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
SMD
Surface Mounted Device
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 16.
Revision history
Document ID
Release date Data sheet status Change notice Supersedes
BLP0427M9S20_0427M9S20G v.2 20210716
Modifications:
•
Product data sheet -
BLP0427M9S20_0427M9S20G
v.1
Table 4 on page 2: updated table with orderable part numbers
BLP0427M9S20_0427M9S20G v.1 20180116
Product data sheet -
BLP0427M9S20_0427M9S20G
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 16 July 2021
-
© Ampleon Netherlands B.V. 2021. All rights reserved.
16 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Maturity — The information in this document can only be regarded as final
once the relevant product(s) has passed the Release Gate in Ampleon's
release process. Prior to such release this document should be regarded as a
draft version.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
BLP0427M9S20_0427M9S20G
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
17 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLP0427M9S20_0427M9S20G
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 16 July 2021
© Ampleon Netherlands B.V. 2021. All rights reserved.
18 of 19
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in Doherty operation . . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Handling information. . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2021.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 16 July 2021
Document identifier: BLP0427M9S20_0427M9S20G
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