BC816-25HVL

BC816H series 80 V, 500 mA NPN general-purpose transistors Rev. 1 — 26 March 2020 Product data sheet 1. General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement: Nexperia JEDEC BC816-16H SOT23 TO-236AB BC806-16H BC816-25H SOT23 TO-236AB BC806-25H 2. Features and benefits • • • • • High current High voltage Two current gain selections High-temperature applications up to 175 °C AEC-Q101 qualified 3. Applications • • General-purpose switching and amplification 48 V automotive board net 4. Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; Tamb = 25 °C - - 80 V IC collector current Tamb = 25 °C - - 500 mA ICM peak collector current single pulse; tp ≤ 1 ms; Tamb = 25 °C - - 1 A hFE DC current gain [1] 100 - 250 [1] 160 - 400 BC816-16H BC816-25H [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 VCE = 1 V; IC = 100 mA Tamb = 25 °C BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 5. Pinning information Table 3. Pinning Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 C B E 1 2 sym123 TO-236AB (SOT23) 6. Ordering information Table 4. Ordering information Type number Package BC816-16H Name Description Version TO-236AB plastic, surface-mounted package; 3 leads SOT23 BC816-25H 7. Marking Table 5. Marking Type number Marking code [1] BC816-16H QQ% BC816-25H QR% [1] % = placeholder for manufacturing site code BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 2 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter; Tamb = 25 °C - 80 V VCEO collector-emitter voltage open base; Tamb = 25 °C - 80 V VEBO emitter-base voltage open collector; Tamb = 25 °C - 7 V IC collector current Tamb = 25 °C - 500 mA ICM peak collector current single pulse; tp ≤ 1 ms; Tamb = 25 °C - 1 A IBM peak base current single pulse; tp ≤ 1 ms; Tamb = 25 °C - 200 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW [2] - 415 mW Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm . aaa-030916 500 Ptot (mW) (1) 400 (2) 300 200 100 0 -75 25 125 Tamb (°C) 225 2 (1) FR4 PCB; 1 cm mounting pad for collector (2) FR4 PCB; standard footprint Fig. 1. Power derating curves for SOT23 BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 3 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 9. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-a) [1] [2] Conditions thermal resistance from junction to ambient in free air; Tamb = 25 °C Min Typ Max Unit [1] - - 500 K/W [2] - - 363 K/W Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm . aaa-028112 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 -5 10 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; single-sided copper; tin-plated and standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-028113 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm Fig. 3. 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 4 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 10. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0 A; Tamb = 25 °C 80 - V V(BR)CEO collector-emitter breakdown voltage IC = 2 mA; IE = 0 A; Tamb = 25 °C 80 - V V(BR)EBO emitter-base breakdown voltage IE = 100 µA; IC = 0 A; Tamb = 25 °C 7 - V ICBO collector-base cut-off current VCB = 64 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 64 V; IE = 0 A; Tj = 150 °C - - 5 μA IEBO emitter-base cut-off current VEB = 5.6 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain Max Unit BC816-16H VCE = 1 V; IC = 100 mA; Tamb = 25 °C [1] 100 - 250 BC816-25H VCE = 1 V; IC = 100 mA; Tamb = 25 °C [1] 160 - 400 VCE = 2 V; IC = 500 mA; Tamb = 25 °C [1] 30 - - collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; Tamb = 25 °C [1] - - 150 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1] - - 400 mV VBE base-emitter voltage VCE = 1 V; IC = 500 mA; Tamb = 25 °C [1] - - 1.2 V fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C 100 - - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 °C - 2 - pF Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz; Tamb = 25 °C - 42 - pF VCEsat [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 5 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors aaa-030819 400 aaa-030820 300 (1) hFE hFE 300 (2) (3) 200 200 (4) (1) (5) (2) (6) (3) 100 100 (7) 0 10-1 (8) 1 10 102 IC (A) VCE = 1 V (1) Tamb = 175 °C (2) Tamb = 150 °C (3) Tamb = 125 °C (4) Tamb = 100 °C (5) Tamb = 85 °C (6) Tamb = 25 °C (7) Tamb = -40 °C (8) Tamb = -55 °C Fig. 4. 0 10-1 103 1 10 102 IC (mA) 103 Tamb = 25 °C (1) VCE = 5 V (2) VCE = 2 V (3) VCE = 1 V Fig. 5. BC816-16H: DC current gain as a function of collector current; typical values BC816-16H: DC current gain as a function of collector current; typical values aaa-030821 1.2 aaa-030822 1.0 VBE (V) VBE (V) (1) 0.9 (2) (3) 0.8 (1) (2) 0.8 (3) (4) 0.4 (5) (6) (7) (8) 0.7 0.6 0 10-1 1 10 102 IC (mA) VCE = 5 V (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C Fig. 6. 0.5 10-1 103 1 10 102 IC (mA) 103 Tamb = 25 °C (1) VCE = 1 V (2) VCE = 2 V (3) VCE = 5 V Fig. 7. BC816-16H: Base-emitter voltage as a function of collector current; typical values BC816-16H: Base-emitter voltage as a function of collector current; typical values BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 6 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors aaa-030823 1.2 aaa-030824 1.0 (1) VBEsat (V) VBEsat (V) (2) 0.9 (3) (1) 0.8 (2) (4) 0.8 (3) (4) 0.7 0.4 (5) (6) 0.6 0 10-1 1 102 10 IC (mA) 1 10 102 IC (mA) 103 Tamb = 25 °C (1) IC/IB = 10 (2) IC/IB = 20 (3) IC/IB = 50 (4) IC/IB = 100 IC/IB = 10 (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 100 °C (5) Tamb = 150 °C (6) Tamb = 175 °C Fig. 8. 0.5 10-1 103 Fig. 9. BC816-16H: Base-emitter saturation voltage as a function of collector current; typical values BC816-16H: Base-emitter saturation voltage as a function of collector current; typical values aaa-030243 10 VCEsat (V) aaa-030825 1 VCEsat (V) 1 (1) 10-1 (2) (1) 10-1 (2) (3) (3) (4) 10-2 10-1 1 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C 10 102 IC (mA) 103 10-2 10-1 1 10 102 IC (mA) 103 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 20 (4) IC/IB = 10 Fig. 10. BC816-16H: Collector-emitter saturation voltage as a function of collector current; typical values Fig. 11. BC816-16H: Collector-emitter saturation voltage as a function of collector current; typical values BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 7 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors aaa-030242 1 IB (mA) = 70 IC (A) 63 56 49 42 0.8 fT (MHz) 35 28 102 21 0.6 aaa-030826 103 14 7 0.4 10 0.2 0 0 1 2 3 4 VCE (V) 1 10-1 5 Tamb = 25 °C Fig. 12. BC816-16H: Collector current as a function of collector-emitter voltage; typical values aaa-030827 10.0 Cc (pF) 1 10 102 IC (mA) 103 f = 100 MHz; VCE = 5 V Tamb = 25 °C Fig. 13. BC816-16H: Transition frequency as a function of collector current; typical values aaa-030828 60 Ce (pF) 7.5 50 5 40 2.5 30 0 0 20 f = 1 MHz Tamb = 25 °C 40 60 VCB (V) 80 20 0 2 4 6 VEB (V) 8 f = 1 MHz Tamb = 25 °C Fig. 14. BC816-16H: Collector capacitance as a function Fig. 15. BC816-16H: Emitter capacitance as a function of collector-base voltage; typical values of emitter-base voltage; typical values BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 8 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors aaa-030829 800 hFE aaa-030830 400 hFE (1) (1) 600 (3) (5) 300 (2) (2) (4) 400 200 (6) (7) 200 0 10-1 (3) 100 (8) 1 10 102 IC (mA) 0 10-1 103 VCE = 1 V (1) Tamb = 175 °C (2) Tamb = 150 °C (3) Tamb = 125 °C (4) Tamb = 100 °C (5) Tamb = 85 °C (6) Tamb = 25 °C (7) Tamb = -40 °C (8) Tamb = -55 °C 1 10 102 IC (mA) 103 Tamb = 25 °C (1) VCE = 5 V (2) VCE = 2 V (3) VCE = 1 V Fig. 17. BC816-25H: DC current gain as a function of collector current; typical values Fig. 16. BC816-25H: DC current gain as a function of collector current; typical values aaa-030831 1.2 aaa-030832 1.0 VBE (V) VBE (V) (1) 0.9 (2) (3) 0.8 (1) (2) 0.8 (3) (4) 0.4 (5) (6) (7) (8) 0.7 0.6 0 10-1 1 10 102 IC (mA) 103 VCE = 5 V (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 85 °C (5) Tamb = 100 °C (6) Tamb = 125 °C (7) Tamb = 150 °C (8) Tamb = 175 °C 0.5 10-1 1 10 102 IC (mA) 103 Tamb = 25 °C (1) VCE = 1 V (2) VCE = 2 V (3) VCE = 5 V Fig. 19. BC816-25H: Base-emitter voltage as a function of collector current; typical values Fig. 18. BC816-25H: Base-emitter voltage as a function of collector current; typical values BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 9 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors aaa-030833 1.2 aaa-030834 (1) 1.0 VBEsat (V) VBEsat (V) (2) 0.9 (3) (1) 0.8 (2) (4) 0.8 (3) (4) 0.4 (5) 0.7 (6) 0.6 0 10-1 1 102 10 IC (mA) 103 0.5 10-1 1 10 102 IC (mA) 103 Tamb = 25 °C (1) IC/IB = 10 (2) IC/IB = 20 (3) IC/IB = 50 (4) IC/IB = 100 IC/IB = 10 (1) Tamb = -55 °C (2) Tamb = -40 °C (3) Tamb = 25 °C (4) Tamb = 100 °C (5) Tamb = 150 °C (6) Tamb = 175 °C Fig. 21. BC816-25H: Base-emitter saturation voltage as a function of collector current; typical values Fig. 20. BC816-25H: Base-emitter saturation voltage as a function of collector current; typical values aaa-030247 10 aaa-030835 1 (1) (2) VCEsat (V) (3) VCEsat (V) (4) 1 10-1 (1) 10-1 (2) (3) 10-2 10-1 1 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C 10 102 IC (mA) 103 10-2 10-1 1 10 102 IC (mA) 103 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 20 (4) IC/IB = 10 Fig. 22. BC816-25H: Collector-emitter saturation voltage as a function of collector current; typical values Fig. 23. BC816-25H: Collector-emitter saturation voltage as a function of collector current; typical values BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 10 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors aaa-030246 1 IB (mA) = 65 IC (A) 58.5 52.0 45.5 39.0 0.8 0.6 fT (MHz) 32.5 26.0 aaa-030836 103 102 19.5 13.0 6.5 0.4 10 0.2 0 0 1 2 3 4 VCE (V) 1 10-1 5 Tamb = 25 °C Fig. 24. BC816-25H: Collector current as a function of collector-emitter voltage; typical values aaa-030837 10.0 Cc (pF) 1 10 102 IC (mA) 103 f = 100 MHz; VCE = 5 V Tamb = 25 °C Fig. 25. BC816-25H: Transition frequency as a function of collector current; typical values aaa-030838 60 Ce (pF) 7.5 50 5 40 2.5 30 0 0 20 40 60 VCB (V) 80 f = 1 MHz Tamb = 25 °C 20 0 2 4 6 VEB (V) 8 f = 1 MHz Tamb = 25 °C Fig. 26. BC816-25H: Collector capacitance as a function Fig. 27. BC816-25H: Emitter capacitance as a function of collector-base voltage; typical values of emitter-base voltage; typical values 11. Test information 11.1. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 11 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 12. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 18-03-12 Fig. 28. Package outline SOT23 (TO-236AB) BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 12 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot23_fr Fig. 29. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot23_fw Fig. 30. Wave soldering footprint for SOT23 (TO-236AB) BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 13 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors 14. Revision history Table 9. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BC816H_SER v.1 Product data sheet - - BC816H_SER Product data sheet 20200326 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 14 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. 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Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 15 / 16 BC816H series Nexperia 80 V, 500 mA NPN general-purpose transistors Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information........................................................ 11 11.1. Quality information................................................... 11 12. Package outline........................................................ 12 13. Soldering................................................................... 13 14. Revision history........................................................14 15. Legal information......................................................15 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 March 2020 BC816H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 March 2020 © Nexperia B.V. 2020. All rights reserved 16 / 16