MMBT3904T 1N

SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Emitter-Base Voltage VEBO 6 V IC Collector Current 200 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA hFE(1) VCE=1V, IC=0.1mA 40 hFE(2) VCE=1V, IC=1mA 70 hFE(3) VCE=1V, IC=10mA 100 hFE(4) VCE=1V, IC=50mA 60 DC current gain Collector-emitter saturation voltage VCE(sat) Collector-emitter saturation voltage VBE(sat) Transition frequency fT 300 IC=10mA, IB=1mA 0.2 V IC=50mA, IB=5mA 0.3 V 0.85 V 0.95 V IC=10mA, IB=1mA 0.65 IC=50mA, IB=5mA VCE=20V,IC=10mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF Base input capacitance Cib VEB=0.5V, IC=0, f=1MHz 8 pF Delay time td 35 ns Rise time tr 35 ns Storage time ts VCC=3V, IC=10mA, IB1= IB2=1mA 200 ns Fall time tf VCC=3V, IC=10mA, IB1= IB2=1mA 50 ns Page 1 of 1 VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 3/11/2013 Page 2 of 2 3/11/2013