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MSULC0524P
Semiconductor
Compiance
Features
■
60Watts peak pulse power (tp = 8/20μs)
■
Bidirectional configurations
■
Solid-state silicon-avalanche technology
■
Low clamping voltage
■
Low leakage current
■
Low capacitance (Cj=0.2pF typ. I/O to I/O)
■
IEC 61000-4-2 ±20kV contact ±25kV air
■
IEC 61000-4-4 (EFT) 40A (5/50ns)
■
IEC 61000-4-5 (Lightning) 4A (8/20μs)
Mechanical Data
DFN2510-10
■
Molding compound flammability rating: UL
94V-0
■
Packaging: Tape and Reel
■
RoHS/WEEE Compliant
Applications
■
USB3.0, USB2.0,Ethernet
■
HDMI 2.0, Displayport 1.3,eSATA
■
Unified Display interface
■
Digital Visual Interface
■
High speed serial interface
Schematic & PIN Configuration
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MSULC0524P
Semiconductor
Compiance
Electrical Characteristics
Parameter
Symbol
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Conditions
Min
Typical
VRWM
Max
Units
5.0
V
6.0
VBR
IT=1mA
Reverse Leakage Current
IR
VRWM=5V,T=25℃
1
µA
Peak Pulse Current
IPP
tp =8/20µs
4
A
Clamping Voltage
VC
IPP=4A,tp=8/20µs
15
V
Junction Capacitance
Cj
V
VR = 0V, f = 1MHz
I/O to I/O
0.2
0.3
VR = 0V, f = 1MHz
I/O to GND
0.4
0.55
pF
Electrical Parameters (TA = 25°C unless otherwise noted)
Parameter
IPP
MaximumReversePeak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
I
IPP
WorkingPeak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VC VBR
VRWM
IT
IR
I
IT R
VRWM
VBR VC
V
Breakdown Voltage @ IT
Test Current
IPP
Note:.8/20µs pulse waveform.
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MSULC0524P
Semiconductor
Compiance
Typical Characteristic Curves
Fig.1 Peak Pulse Power Rating Curve
Fig.2 Pulse Derating Curve
% of Rated Power (PPP) or IPP
Peak Pulse Power –PPP(KW)
10
1
60W
0.1
0.01
0.1
1
10
100
Pulse Duration tp (μs)
1000
Fig.3 Pulse Waveform-8/20μs
120
60
40
20
0
0
25
50
75
100
125
Ambient Temperature—TA(℃)
100%IPP , 8μS
150
100%
90%
30ns
80
50%IPP, 20μS
-t
e
60
Percent of IPP
Percent of IPP
80
Fig.4 Pulse Waveform-ESD(IEC61000-4-2)
100
40
20
0
110
100
60ns
10%
0
5
10
15
Time (μs)
20
25
30
0
tr 0.7 to 1ns
30
60
Time (ns)
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MSULC0524P
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Symbol
Dimensions in millimeters
Min
Nom
Max
A
0.45
0.50
0.55
A1
-
0.02
0.05
A3
0.10
0.15
0.20
D
2.45
2.50
2.55
E
0.95
1.00
1.05
D1
0.35
0.40
0.45
b
0.15
0.20
0.25
e
L
0.50BSC
0.35
0.40
0.45
REEL SPECIFICATION
P/N
MSULC0524P
PKG
DFN2510P10
QTY
3000
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MSULC0524P
Semiconductor
Compiance
Attention
■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
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or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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without the prior written permission of MSKSEMI Semiconductor.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the
MSKSEMI Semiconductor productthat you intend to use.
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