AZ5325-01F

AZ5325-01F TVS/ESD Protection Diode DESCRIPTION FEATURES The AZ5325-01F is a low-capacitance Transient — Transient protection for high-speed data lines IEC 61000-4-2 (ESD) ±15kV (Air) ±8kV (Contact) IEC 61000-4-4 (EFT) 40A (5/50 ns) Cable Discharge Event (CDE) Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD) protection for data, control or power lines. With typical capacitance of 8pF only, The AZ5325-01F is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very fast charged device model (CDM) ESD and cable discharge — Package optimized for high-speed lines — Ultra-small package (1.0mm0.6mm0.4mm) — Protects one data, control or power line —Low capacitance event (CDE), etc. — Low leakage current — Low clamping voltage The AZ5325-01F is uses ultra-small DFN1006 — Each I/O pin can withstand over 1000 ESD strikes for ±8kV contact discharge package. The AZ5325-01F is device can protect one data line. It offers system designers flexibility MACHANICAL DATA to protect single data line where space is a premium concern. —DFN1006 package — Flammability Rating: UL 94V-0 — Packaging: Tape and Reel — High temperature soldering guaranted:260℃/10s — Reel size: 7 inch ORDERING INFORMATION APPLICATIONS —Package: DFN1006 — Material: RoHS compliant, Halogen free — Packing: Tape & Reel — Quantity per reel: 10,000pcs —Portable Electronics — Desktops, Servers and Notebooks —Cellular Phones —MP3 Ports —Digital Ports — Subscriber Identity Module (SIM) card CIRCUIT DIAGRAM PIN CONFIGURATION 1/4 AZ5325-01F TVS/ESD Protection Diode ABSOLUTE MAXIMUM RATING Value Units 100 W Operating Temperature -55/+125 C Storage Temperature -55/+150 C Symbol PPP Tj TSTG Parameter Peak Pulse Power (8/20μs) ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol Parameter VRWM Reverse Stand-Off Voltage VBR Reverse Breakdown voltage Test Condition IT=1mA Min Typ Max Units 5.0 V 6.0 V IR Reverse leakage current. VRWM=5V 1 µA IPP Peak Pulse Current tP=8/20us 5 A VC Clamping Voltage IPP=1A, tP=8/20us 9.5 CJ Junction Capacitance IPP=5A, tP=8/20us 13 15 VR=0V,f=1MHz 8 15 2/4 V pF AZ5325-01F TVS/ESD Protection Diode ELECTRICAL CHARACTERISTICS CURVE 3/4 AZ5325-01F TVS/ESD Protection Diode DFN1006 PACKAGE OUTLINE DIMENSIONS Symbol Dimensions In Millimeters Minimum Maximum A 0.450 0.550 A1 0.000 0.050 b 0.45 0.55 C 0.12 0.18 D 0.950 1.050 e 0.65BSC E 0.550 0.650 L 0.200 0.300 L1 h 0.05REF 0.07 4/4 0.17