PMV37ENER

PMV37ENE 60 V, N-channel Trench MOSFET 29 November 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 3.5 A - 37 49 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 3.5 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package PMV37ENE Name Description Version SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PMV37ENE %3M [1] % = placeholder for manufacturing site code PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 2 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 3.5 A VGS = 10 V; Tamb = 100 °C [1] - 2.5 A - 14 A [2] - 710 mW [1] - 1.3 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 8.3 W Tj junction temperature Tsp = 25 °C -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C - 1.3 A Source-drain diode IS [1] [2] source current Tamb = 25 °C [1] 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-026120 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-026121 120 25 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMV37ENE Product data sheet 0 -75 225 Fig. 2. 125 Tj (°C) 225 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 November 2021 25 © Nexperia B.V. 2021. All rights reserved 3 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET aaa-029983 102 ID (A) Limit RDSon = VDS/ID tp = 10 µs 10 100 µs 1 1 ms DC; Tsp = 25 °C 10-1 10-2 10-1 Fig. 3. 10 ms DC; Tamb = 25 °C; 6 cm2 100 ms 1 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 4 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions thermal resistance from junction to solder point Min Typ Max Unit [1] - 175 210 K/W [2] - 95 115 K/W - 13 18 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-029752 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-029753 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 0.5 0.25 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 5 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.3 1.7 2.7 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 10 V; ID = 3.5 A; Tj = 25 °C - 37 49 mΩ VGS = 10 V; ID = 3.5 A; Tj = 175 °C - 80 106 mΩ RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C - 45 64 mΩ gfs forward transconductance VDS = 10 V; ID = 3.5 A; Tj = 25 °C - 18.2 - S RG gate resistance f = 1 MHz - 2 - Ω VDS = 30 V; ID = 3.5 A; VGS = 10 V; Tj = 25 °C - 8.8 13 nC - 1.1 - nC - 1.8 - nC - 450 - pF - 49 - pF - 30 - pF - 5 - ns - 7 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 13 - ns tf fall time - 4 - ns - 0.8 1.2 V VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 30 V; ID = 3.5 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMV37ENE Product data sheet IS = 1.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 6 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET aaa-022662 16 aaa-022663 10-3 3.2 V ID (A) ID (A) 12 10 V 4.5 V 3.4 V min 10-4 3.0 V typ max 8 2.8 V 10-5 4 VGS = 2.5 V 0 Fig. 6. 0 1 2 3 4 VDS (V) 10-6 5 0 1 2 VGS (V) 3 Tj = 25 °C Tj = 25 °C; VDS = 10 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-022664 180 RDSon (mΩ) 150 2.5 V 2.8 V 3V aaa-029371 200 3.2 V RDSon (mΩ) 150 120 90 3.4 V 60 4.5 V Tj = 175 °C 50 Tj = 25 °C VGS = 10 V 30 0 100 0 4 8 12 ID (A) 0 16 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 VGS (V) 10 ID = 3.1 A Drain-source on-state resistance as a function of drain current; typical values PMV37ENE 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 7 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET aaa-029372 15 aaa-029373 3 ID (A) a 10 2 5 1 Tj = 175 °C 0 0 1 Tj = 25 °C 2 3 VGS (V) 0 -60 4 0 60 120 Tj (°C) 180 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-029374 4 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-022669 103 Ciss VGS(th) (V) C (pF) 3 102 Coss max 2 Crss 10 typ 1 0 -60 min 0 60 120 Tj (°C) 1 10-1 180 ID = 250µA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV37ENE 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 8 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET aaa-022670 10 VGS (V) VDS 8 ID 6 VGS(pl) 4 VGS(th) VGS 2 0 QGS2 QGS1 0 2 4 6 QG (nC) QGS 8 QGD QG(tot) VDS = 30 V; ID = 4 A 003aaa508 Fig. 15. Gate charge waveform definitions Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-029375 4 IS (A) 3 2 Tj = 175 °C Tj = 25 °C 1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 9 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 10 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 HE 1.9 0.95 Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version References IEC SOT23 JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline SOT23 PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 11 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for SOT23 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for SOT23 PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 12 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV37ENE v.1 Product data sheet - - PMV37ENE Product data sheet 20211129 All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 13 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 14 / 15 PMV37ENE Nexperia 60 V, N-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2021. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 29 November 2021 PMV37ENE Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2021 © Nexperia B.V. 2021. All rights reserved 15 / 15