PSMN3R9-100YSFX

PSMN3R9-100YSF NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package 11 June 2021 Product data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • • • • • • Low Qrr for higher efficiency and lower spiking 120 A ID (max) – demonstrated continuous current rating Low QG × RDSon FOM for high efficiency switching applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56E package 3. Applications • • • • • • Synchronous rectifier in AC-DC and DC-DC Primary side switch – 48 V DC-DC BLDC motor control USB-PD adapters Full-bridge and half-bridge applications Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 100 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 120 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 294 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 - 3.3 4.3 mΩ VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 - 5.1 6.9 mΩ ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 5 18 41 nC 40 80 120 nC - - 325 mJ Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 52.6 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 95 µs; Fig. 4 [1] PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Symbol Parameter Conditions Min Typ Max Unit IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Fig. 18 - 44 - nC Simplified outline Graphic symbol Source-drain diode Qr [1] recovered charge Protected by 100% test 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain D G 1 2 3 4 mbb076 S LFPAK56E; PowerSO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package PSMN3R9-100YSF Name Description Version LFPAK56E; Power-SO8 plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch SOT1023 7. Marking Table 4. Marking codes Type number Marking code PSMN3R9-100YSF 3F9S10J 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 100 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 294 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 120 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 120 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 690 A Tstg storage temperature -55 175 °C PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 2 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Symbol Parameter Tj Tsld(M) Conditions Min Max Unit junction temperature -55 175 °C peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 120 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 690 A Avalanche ruggedness EDS(AL)S non-repetitive drainID = 52.6 A; Vsup ≤ 100 V; RGS = 50 Ω; source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 95 µs; Fig. 4 [1] - 325 mJ IAS non-repetitive avalanche Vsup = 100 V; VGS = 10 V; Tj(init) = 25 °C; current RGS = 50 Ω; Fig. 4 [1] - 52.6 A [1] Protected by 100% test 03aa16 120 Pder (%) aaa-029645 200 ID (A) 150 80 (1) 100 40 50 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Fig. 2. Product data sheet 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V (1) 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Normalized total power dissipation as a function of mounting base temperature PSMN3R9-100YSF 0 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 3 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package ID (A) aaa-029648 103 Limit RDSon = VDS / ID 102 tp = 10 µs 100 µs 10 1 10-1 1 ms 10 ms 100 ms DC 1 10 VDS (V) 102 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-029644 102 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 5 junction to mounting base - 0.45 0.51 K/W Rth(j-a) thermal resistance from Fig. 6 junction to ambient Fig. 7 - 42 - K/W - 85 - K/W PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 4 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package aaa-029647 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 0.02 single shot P δ= Fig. 5. 10-5 10-4 10-3 10-2 T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration aaa-027933 aaa-027935 Copper square 25.4 mm x 25.4 mm; 70 µm thick on FR4 board Fig. 6. T t tp 10-3 10-6 tp PCB layout for resistance from junction to ambient 70 µm thick copper on FR4 board Fig. 7. PCB layout with minimum footprint for thermal resistance from junction to ambient 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11 2 3 4 V ID = 1 mA; VDS=VGS; Tj = 175 °C - 1.65 - V Static characteristics V(BR)DSS VGS(th) ID = 1 mA; VDS=VGS; Tj = -55 °C - 3.5 - V ΔVGS(th)/ΔT gate-source threshold voltage variation with temperature 25 °C ≤ Tj ≤ 150 °C - -8.4 - mV/K IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.03 1 µA VDS = 100 V; VGS = 0 V; Tj = 125 °C - 10 100 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA IGSS gate leakage current PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 5 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 - 3.3 4.3 mΩ VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 12 - 3.9 6.1 mΩ VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 - 5.1 6.9 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 13 - 7.3 9.9 mΩ f = 1 MHz; Tj = 25 °C 0.4 0.83 1.7 Ω ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 40 80 120 nC ID = 0 A; VDS = 0 V; VGS = 10 V - 42 - nC ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 14; Fig. 15 14 23.6 33 nC - 15.3 - nC RG gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge - 8.3 - nC QGD gate-drain charge 5 18 41 nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.5 - V Ciss input capacitance 3300 5520 7730 pF Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 16 800 1335 2140 pF Crss reverse transfer capacitance 3 29 75 pF td(on) turn-on delay time - 22 - ns tr rise time - 18 - ns td(off) turn-off delay time - 46 - ns tf fall time - 26 - ns VDS = 50 V; RL = 2 Ω; VGS = 10 V; RG(ext) = 5 Ω Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.82 1 V trr reverse recovery time - 43 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Fig. 18 - 44 - nC PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 6 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package aaa-029649 300 ID (A) 250 10 V aaa-029650 12 RDSon (mΩ) 10 7V 200 8 6V 150 6 VGS = 5.5 V 100 4 5V 50 2 4.5 V 0 Fig. 8. 0 1 2 3 VDS (V) 0 4 0 4 8 12 16 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 25 A Output characteristics; drain current as a Fig. 9. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-029651 300 ID (A) 250 aaa-011501 10-1 ID (A) 10-2 200 10-3 150 10-4 100 175°C 50 0 0 1 2 3 4 10-5 Tj = 25°C 5 6 7 VGS (V) 10-6 8 VDS = 8 V Product data sheet 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5 V Fig. 10. Transfer characteristics; drain current as a function of gate-source voltage; typical values PSMN3R9-100YSF 0 Fig. 11. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 7 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package aaa-029652 20 RDSon (mΩ) 5V 5.5 V a 6V aaa-029656 2.5 16 2 12 1.5 8 1 7V 4 0.5 VGS = 10 V 0 0 40 80 120 160 ID (A) 0 -60 200 -30 0 30 60 90 120 150 Tj (°C) 180 Tj = 25 °C Fig. 12. Drain-source on-state resistance as a function of drain current; typical values VGS (V) Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature aaa-029653 10 VDS 8 ID VDS = 20 V 6 VGS(pl) 80 V 50 V 4 VGS(th) VGS 2 0 QGS2 QGS1 0 20 40 60 80 QG (nC) QGS 100 Tj = 25 °C; ID = 25 A Fig. 14. Gate-source voltage as a function of gate charge; typical values PSMN3R9-100YSF Product data sheet QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 8 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package aaa-029654 104 C (pF) Ciss Coss 103 aaa-029655 300 IS (A) 250 200 150 102 100 10 10-1 1 10 VDS (V) 175°C 50 Crss 0 102 VGS = 0 V; f = 1 MHz 0 0.2 0.4 0.6 Tj = 25°C 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a as a function of drain-source voltage; typical function of source-drain (diode forward) values voltage; typical values 003aal160 ID (A) trr ta tb 0 0.25 IRM IRM t (s) Fig. 18. Reverse recovery timing definition PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 9 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package 11. Package outline Plastic single-ended surface-mounted package (LFPAK56E); 4 leads A E SOT1023 E1 A b1 b2 (3x) c1 mounting base H D1 D L 1 2 3 4 b e A1 w A X c C θ Lp detail X 0 2.5 mm 5 mm scale Dimensions Unit y C A A1 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 4.45 5.30 nom 0.85 min 0.95 0.00 0.35 3.62 0.19 0.24 4.45 4.95 3.7 3.5 e 1.27 H L Lp 6.2 1.3 0.85 5.9 0.8 0.40 w y 0.25 0.1 θ 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version sot1023_po References IEC JEDEC JEITA European projection Issue date 13-03-05 17-07-31 SOT1023 Fig. 19. Package outline LFPAK56E; Power-SO8 (SOT1023) PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 10 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package 12. Soldering 4.7 4.2 0.25 (2×) 0.9 (3×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area sot1023_fr Fig. 20. Reflow soldering footprint for LFPAK56E; Power-SO8 (SOT1023) PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 11 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package 13. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 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The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 12 / 13 PSMN3R9-100YSF Nexperia NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Legal information......................................................12 © Nexperia B.V. 2021. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 11 June 2021 PSMN3R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 June 2021 © Nexperia B.V. 2021. All rights reserved 13 / 13