GUVA-S12SD

UV-A Sensor GUVA-S12SD Features Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current Applications Outline Diagrams and Dimensions UV Index Monitoring UV-A Lamp Monitoring Cathode Absolute Maximum Ratings Anode Parameter Symbol Min. Max. Unit Storage Temperature Tst -40 90 ℃ Operating Temperature Top -30 85 ℃ g Reverse Voltage Vr, max. 5 V Forward Current If,max. 1 ㎃ Optical Source Power Range Popt 100m W/㎠ UVA Lamp Soldering Temperature Tsol 260 ℃ within 10 sec. Max. Unit Test Conditions 1 ㎁ Vr = 0.1 V 125 ㎁ UVA Lamp, 1㎽/㎠ 21 ㎁ 1 UVI 0.1µ Remark ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠ Characteristics (at 25℃) Parameter Symbol Dark Current Id Photo Current Iph Temperature Coefficient Typ. Min. 113 101 Itc 0.08 ％/℃ UVA Lamp Responsivity R 0.14 A/W λ = 350 ㎚, Vr = 0 V Spectral Detection Range λ ㎚ 10% of R 240 370 Active area 0.076 Responsivity Curve ㎟ Photocurrent along UV Power 400 GUVA-S12SD Test Condition : Vr=0V Optical Source : 352nm UVA Lamp Photocurrent(nA)=113 × UV Power 1600 Photo current (nA) Photo current(nA) 2000 1200 800 400 0 300 200 100 0 0 3 6 9 12 UV-A Power(mW/cm2) 15 GUVA-S12SD Test Condition : Vr=0V Optical Source : Sunlight Photo current(nA)=21× UVI + 83 0 3 6 9 12 15 UV Index Caution ESD can damage the device hence please avoid ESD ESD. GNF – 722 – 11 (0) Genicom Co., Ltd. 2018-REV1.0-SJ.LEE