0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
KIRLML5203TRPBF

KIRLML5203TRPBF

  • 厂商:

    KUU(永裕泰)

  • 封装:

    SOT-23

  • 描述:

    P沟道30-V(D-S)-30V -3A 98Ω@10V,3A 1.25W 2.5V@250uA 43pF@15V P Channel 510pF@15V 9.5nC@10V +150℃@(Tj) S...

  • 数据手册
  • 价格&库存
KIRLML5203TRPBF 数据手册
KIRLML5203TRPBF P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID -30 V 98mΩ@-10V 165mΩ@-4.5V -3.0A FEATURE APPLICATION ● TrenchFET Power MOSFET ※ Load Switch for Portable Devices ● Ultra Low On-Resistance ※ DC/DC Converter ● Available in Tape and Reel Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 ID -3.0 Pulsed Diode Curren IDM -24 Power Dissipation PD 1.25 W RθJA 100 ℃/W TJ 150 TSTG -55~+150 Continuous Drain Current Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature 1/3 Unit V A ℃ KIRLML5203TRPBF MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID = -250µA -30 VGS(th) VDS =VGS, ID = -250µA -1 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea Diode forward voltage Continuous Source-Drain Diode Current RDS(on) V -2.5 V VDS =0V, VGS = ±20V ±100 nA VDS = -24V, VGS =0V -1 µA VGS = -10V, ID = -3.0A 98 mΩ VGS = -4.5V, ID = -2.5A 165 mΩ gfs VDS = -10V, ID = -3A VSD IS=1A, VGS=0V 3.1 S -0.8 IS -1.2 V -1.3 A Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb 510 pF 71 pF Crss 43 pF Total gate charge Qg 9.5 nC Gate-source charge Qgs 2.3 nC Gate-drain charge Qgd 1.6 nC 6.5 Ω 12 ns 18 ns 88 ns 52 ns Gate resistance VDS = -15V,VGS =0V, f=1MHz VDS = -15V,VGS = -10V, ID = -3A Rg f=1MHz Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDS= -15V RL=6Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω tf Body Diode Reverse Recovery Time Trr IF= -3.0A, dI/dt=100A/µs 17 ns Body Diode Reverse Recovery Charge Qrr IF= -3.0A, dI/dt=100A/µs 12 nC Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. 2/3 KIRLML5203TRPBF 3/3
KIRLML5203TRPBF 价格&库存

很抱歉,暂时无法提供与“KIRLML5203TRPBF”相匹配的价格&库存,您可以联系我们找货

免费人工找货
KIRLML5203TRPBF
    •  国内价格
    • 10+0.32126
    • 100+0.26378
    • 300+0.23506
    • 3000+0.20191
    • 6000+0.18467
    • 9000+0.17605

    库存:4794

    KIRLML5203TRPBF
      •  国内价格
      • 1+0.30430

      库存:100