BRFL12N60

BRFL12N60 Rev.F Mar.-2018 描述 / DATA SHEET Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 该器件适用于高效电源模块，主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology . 内部等效电路 引脚排列 1 2 / Equivalent Circuit / Pinning 3 PIN1：G 放大及印章代码 PIN 2：D PIN 3：S / hFE Classifications & Marking 见印章说明。See Marking Instructions. http://www.fsbrec.com 1/7 BRFL12N60 Rev.F Mar.-2018 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit VDSS 600 V Drain Current ID(Tc=25℃) 12 A Drain Current ID(Tc=100℃) 7.4 A IDM 48 A Gate-Source Voltage VGSS ±20 V Single Pulsed Avalanche Energy EAS 870 mJ Repetitive Avalanche Energy EAR 22.5 mJ Avalanche Current IAR 12 A Power Dissipation PD(Tc=25℃) 51 W TJ,TSTG -55 to 150 ℃ Drain-Source Voltage Drain Current - Pulsed Operating and Storage Temperature Range 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter 符号 Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Forward IGSS 测试条件 Test Conditions VGS=0V ID=250μA 最小值 典型值 最大值 单位 Min Typ Max Unit 600 ID = 250μA V 0.5 VDS=600V VGS=0V VDS=480V 1 μA TC=125℃ 100 μA VGS=±20V VDS=0V ±100 nA 4 V 0.65 Ω Gate Threshold Voltage VGS(th) VDS=VGS ID=250μA Static Drain-Source On-Resistance RDS(on) VGS=10V ID=6A 0.53 Forward Transconductance gFS VDS=40V ID=6A 13 Drain-Source Diode Forward Voltage VSD VGS=0V IS=12A http://www.fsbrec.com V/°C 2 S 1.4 V 2/7 BRFL12N60 Rev.F Mar.-2018 电性能参数 DATA SHEET / Electrical Characteristics(Ta=25℃) 参数 Parameter 符号 Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 测试条件 Test Conditions 最小值 典型值 最大值 单位 Min Typ Max Unit 1760 2290 pF 182 235 pF Crss 21 28 pF Turn-On Delay Time td(on) 30 70 ns Turn-On Rise Time tr 85 180 ns Turn-Off Delay Time td(off) 140 280 ns VDS=25V f=1MHz VDD=300V RG=25Ω VGS=0V ID=12A Turn-Off Fall Time tf 90 190 ns Total Gate Charge Qg 48 63 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current ID = 12A 8.5 nC 21 nC IS 12 A ISM 48 A Reverse Recovery Time trr Reverse Recovery Charge Qrr http://www.fsbrec.com VDS = 400V VGS = 10V IS = 12A VGS = 0V dIF/dt =100A/μs 420 ns 4.9 uC 3/7 BRFL12N60 Rev.F Mar.-2018 电参数曲线图 DATA SHEET / Electrical Characteristic Curve http://www.fsbrec.com 4/7 BRFL12N60 Rev.F Mar.-2018 外形尺寸图 DATA SHEET / Package Dimensions http://www.fsbrec.com 5/7 BRFL12N60 Rev.F Mar.-2018 印章说明 / DATA SHEET Marking Instructions BR 12N60 ****  说明： BR： 为公司代码 12N60：  为型号代码 ****：  为生产批号代码，随生产批号变化。  Company Code Note: BR:   12N60: ****: http://www.fsbrec.com Product Type.  Lot No. Code, code change with Lot No. 6/7 BRFL12N60 Rev.F Mar.-2018 DATA SHEET 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： Note: 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150℃, Time:60~90sec. 2、峰值温度 255±5℃，时间持续为 5±0.5sec; 2.Peak Temp.:255±5℃, Duration:5±0.5sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 包装规格 Package Type 封装形式 使用说明 Temp.:270±5℃ Time:10±1 sec / Packaging SPEC. 套管包装 TO-220FL 时间：10±1 sec. / TUBE Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 50 20 1,000 5 5,000 532×33×7.0 555×164×50 575×290×180 / Notices http://www.fsbrec.com 7/7