SI2304DS

MSV SI2304DS N-Channel Enhancement Mode Power MOSFET   Features General Description VDS = 30V, • Load Switch ID = 4.3A • DC/DC Converters RDS(ON) @VGS= 10V, TYP 32mΩ RDS(ON) @VGS= 4.5V, TYP 51mΩ  Pin Configurations SOT-23 MARKING:N48  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) *AC Drain Current (Pulse) TA=25°C 4.3 ID TA=70°C *B TA=25°C Power Dissipation Operating Temperature/ Storage Temperature  A 3.5 IDM 20 A PD 1.25 W TJ/TSTG -55~150 ℃ Symbol Maximum Unit RthJA 100 ℃/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient t ≤ 5s www.mswdz.com Page 1 of 5 MSV  SI2304DS Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID= 250μA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V -- -- 1 μA VGS(TH) VGS = VDS, IDS = 250μA 1 -- 2.5 V IGSS VGS = 20V, VDS = 0V -- -- 100 nA RDS(on) VGS = 10V, ID = 4A -- 32 42 mΩ RDS(on) VGS = 4.5V, ID = 3A -- 51 70 mΩ Diode Forward Voltage VSD ISD = 1A , VGS = 0V -- -- 1.2 V Diode Forward Current IS TA = 25°C -- -- 1 A -- 12.3 -- nC -- 1.5 -- nC Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 2.5 -- nC Turn-on Delay Time td ( on ) -- 9 -- ns Turn-on Rise Time tr VDD = 15V, RG = 3Ω -- 3 -- ns Turn-off Delay Time td( off ) ID = 4A, VGS = 10V -- 24 -- ns Turn-Off Fall Time tf -- 4 -- ns Input Capacitance Ciss -- 610 -- pF Output Capacitance Coss -- 145 -- pF Reverse Transfer Capacitance Crss -- 95 -- pF VGS = 10V, VDS = 15V, ID = 6A Dynamic VGS = 0V,VDS = 15V,f = 1.0MHz 2 A: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.mswdz.com Page 2 of 5 MSV  SI2304DS Typical Performance Characteristics（(TJ = 25 °C, unless otherwise noted)） www.mswdz.com Page 3 of 5 MSV SI2304DS www.mswdz.com Page 4 of 5 MSV  SI2304DS Package Information www.mswdz.com Page 5 of 5