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ES2J

ES2J

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    快/超快恢复二极管 电压:600V 电流:2A SMA(DO-214AC)

  • 数据手册
  • 价格&库存
ES2J 数据手册
ES2A THRU ES2J Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features DO-214AC/SMA  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.110(2.80) 0.094(2.40) 0.067 (1.70) 0.051 (1.30) 0.177(4.50) 0.157(3.99) 0.012(0.305) 0.006(0.152)  250°C/10 seconds at terminals Glass passivated chip junction 0.096(2.42) 0.078(1.98) Mechanical Data 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.208(5.30) 0.188(4.80) Case : JEDEC DO-214AC/SMA Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.0019 ounce, 0.055grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC MDD ES2A MDD ES2B MDD ES2C MDD ES2D MDD ES2E MDD ES2G MDD ES2J UNITS 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 V V V Maximum average forward rectified current at Tc=125℃ I(AV) 2.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 50 A Maximum instantaneous forward voltage at 2.0A VF Maximum DC reverse current at rated DCblocking voltage TA=25℃ 1 1.25 1.68 V 5.0 100.0 uA CJ 35 40.0 pF Typical thermal resistance (NOTE 3) RJA 60.0 ℃/W Operating junction and storage temperature range TJ,TSTG TA=125℃ Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) IR trr -55to+150 ns ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Pulse test: Pulse width 200 sec, Duty cycle 2% 4..P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. http://www.microdiode.com Rev:2024A2 Page :1 ES2A THRU ES2J Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Ratings And Characteristic Curves Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive trr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.0 300 2.5 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 100 TJ=125°C 10 TJ=75°C 1.0 TJ=25°C 0.1 0.0 25 50 75 100 125 150 175 0 20 Case Temperature (°C) 60 80 100 Fig.5 Typical Junction Capacitance 10 Junction Capacitance (pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics TJ=25°C 1.0 ES2A~ES2D ES2E/ES2G 0.1 40 % of PIV.VOLTS ES2J 0.01 TJ=25°C 100 10 TJ=25°C f = 1.0MHz Vsig = 50mVp-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 ES2A THRU ES2J Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SMA A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 5.33 2.36 1.50 330.00 50.00 178.00 62.00 13.00 1.75 5.50 4.00 4.00 2.00 0.28 12.00 18.00 E F B A Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMA REEL SIZE 7" APPROX. GROSS WEIGHT (kg) REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 2,000 4.0 4,000 183*155*183 178 382*356*392 80,000 10,000 290*290*38 330 310*310*360 80,000 11.0 15,000 335*335*38 330 350*330*360 120,000 14.5 SMA 11" 5,000 4.0 SMA 13" 7,500 4.0 CARTON SIZE (m/m) CARTON (pcs) 16.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 1.68 0.066 B 1.52 0.060 C 3.93 0.154 D 2.41 0.095 E 5.45 0.215 Unit (inch) Rev:2024A2 Page :3

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ES2J
  •  国内价格
  • 20+0.15420
  • 100+0.11530
  • 500+0.08940
  • 5000+0.06480
  • 25000+0.05830

库存:14968

ES2J
    •  国内价格
    • 50+0.12086
    • 500+0.09656
    • 1500+0.08306
    • 5000+0.07388
    • 25000+0.06686
    • 50000+0.06308

    库存:180671

    ES2J
    •  国内价格
    • 10+0.07550
    • 50+0.06950
    • 200+0.06450
    • 600+0.05950
    • 1500+0.05550
    • 3000+0.05300

    库存:1680