0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
AO3416A

AO3416A

  • 厂商:

    UMW(友台)

  • 封装:

    SOT-23

  • 描述:

    MOSFETs N沟道 20V 6A 51mΩ@1.8V,5A SOT-23

  • 数据手册
  • 价格&库存
AO3416A 数据手册
UMW R UMW AO3416A N-Channel MOSFET ■ Features SOT–23 ● VDS (V) = 20V ● ID = 6 A (VGS = 4.5V) ● RDS(ON) < 25mΩ (VGS = 4.5V) ● RDS(ON) < 33mΩ (VGS = 2.5V) ● RDS(ON) < 51mΩ (VGS = 1.8V) 1. GATE 2. SOURCE D 3. DRAIN G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta=25℃ ID Ta=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient IDM Ta=25℃ PD Ta=70℃ t≤10sec RthJA Steady State Thermal Resistance.Junction-to-Foot RthJF Junction Temperature Storage Temperature Range www.umw-ic.com 1 Unit V 6 5 A 30 1.4 0.9 W 90 125 ℃/W 80 TJ 150 Tstg -55 to 150 ℃ 友台半导体有限公司 UMW R UMW AO3416A ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) On-State Drain Current ID(on) Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs Test Conditions ID=250uA, VGS=0V Min Typ 20 1 VDS=20V, VGS=0V, Ta=70℃ 5 VDS=0V, VGS=±8V VDS=VGS , ID=250μA 0.4 VDS =5 V, VGS = 4.5 V 30 33 VGS=1.8V, ID=5A 51 50 1295 VGS=0V,VDS=0V,f=1MHz VGS=4.5V, VDS=10V, ID=6.5A Turn-Off DelayTime td(off) Diode Forward Voltage VSD VDS=10V, ,VGEN=4.5V RL=1.54Ω,RG=3Ω IF= 6.5A, dI/dt= 100A/μs IS=1.0A,VGS=0V nC 4.2 tr IS KΩ 10 Turn-On Rise Time Qrr pF 1.8 2.6 Maximum Body-Diode Continuous Current S 87 280 Body Diode Reverse Recovery Charg mΩ 1650 160 Qgd tf V VGS=2.5V, ID=5.5A td(on) trr 1.1 A Turn-On DelayTime Body Diode Reverse Recovery Time uA 25 VGS=0V,VDS=10V,f=1MHz uA ±10 VGS=4.5V, ID=6.5A VDS=5V, ID=6.5A Unit V VDS=20V, VGS=0V Gate Drain Charge Turn-Off Fall Time Max 328 ns 3.76 2.24 31 41 6.8 0.62 nC 2 A 1 V *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. www.umw-ic.com 2 友台半导体有限公司 R UMW UMW AO3416A ■ Typical Characterisitics 30 25 2.5V 25 1.8V 3.1V 20 4.5V 15 ID(A) ID (A) 20 15 VGS=1.5V 10 10 25°C 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 Ω) RDS(ON) (mΩ 125°C 5 5 VGS=1.8V 20 VGS=2.5V 15 VGS=4.5V VGS=2.5V ID=5.5A 1.4 VGS=1.8V ID=5A 1.2 VGS=4.5V10 ID=6.5A 1 0.8 10 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 60 ID=6.5A 1.0E+00 50 40 1.0E-01 40 IS (A) RDS(ON) (mΩ Ω) VDS=5V 125°C 30 1.0E-02 125°C 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) www.umw-ic.com 2 3 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 友台半导体有限公司 R UMW UMW AO3416A ■ Typical Characterisitics 5 1800 VDS=10V ID=6.5A 1600 1400 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1200 1000 800 600 400 1 Coss 200 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 VDS (Volts) Figure 8: Ca acitance Characteristics 20 p 10000 100.0 10µs RDS(ON) limited 1ms 1.0 10ms 0.1 100ms TJ(Max)=150°C TA=25°C 0.1 1 VDS (Volts) 10 100 10 10s DC 1 0.0 0.01 TJ(Max)=150°C TA=25°C 1000 100µs Power (W) 10.0 ID (Amps) Crss 0 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) . Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.umw-ic.com 4 友台半导体有限公司 UMW R UMW AO3416A Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° AGLX 22 Marking U Ordering information Order code Package Baseqty Deliverymode UMW AO3416A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司
AO3416A 价格&库存

很抱歉,暂时无法提供与“AO3416A”相匹配的价格&库存,您可以联系我们找货

免费人工找货
AO3416A
  •  国内价格
  • 5+0.31280
  • 20+0.28520
  • 100+0.25760
  • 500+0.23000
  • 1000+0.21712
  • 2000+0.20792

库存:65

AO3416A
  •  国内价格
  • 5+0.13554
  • 20+0.13306
  • 100+0.12808

库存:140

AO3416A
    •  国内价格
    • 20+0.20283
    • 200+0.16794
    • 600+0.14861
    • 3000+0.12680
    • 9000+0.11675
    • 21000+0.11124

    库存:61934