VB7322

VB7322 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.023 at VGS = 10 V 6 0.027 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.2 nC TSOP-6 APPLICATIONS • DC/DC Converters, High Speed Switching D 1 6 D D 2 5 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C ID TA = 25 °C 5.5b, c 4.4b, c 25 TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM TC = 25 °C Continuous Source-Drain Diode Current 1.1b, c 2.5 TC = 25 °C TC = 70 °C Maximum Power Dissipation 1.6 PD TA = 25 °C W 1.3b, c 0.8b, c - 55 to 150 TA = 70 °C Operating Junction and Storage Temperature Range A 2.1 IS TA = 25 °C V 6e 6e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg Soldering Recommendations (Peak Temperature) °C 260 THERMAL RESISTANCE RATINGS Symbol Typical Maximum Maximum Junction-to-Ambientb, d t5s RthJA 75 100 Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Parameter Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. 服务热线：400-655-8788 1 VB7322 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 VDS/TJ VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Max. mV/°C - 4.8 0.5 1.5 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 10 VDS 5 V, VGS = 10 V Unit V 30 ID = 250 µA VGS(th) Temperature Coefficient Typ. 20 µA A VGS 10 V, ID = 5.5 A 0.023 VGS 4.5 V, ID = 5 A 0.027 VDS = 15 V, ID = 5.5 A 24  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 424 VDS = 15 V, VGS = 0 V, f = 1 MHz td(off) pF 42 VDS = 15 V, VGS = 10 V, ID = 5.5 A 8.2 13 4.2 7 1.4 VDS = 15 V, VGS = 4.5 V, ID = 5.5 A f = 1 MHz VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 4.5 V, Rg = 1  2.5 12.6 25.2 6 12 20 30 14 21 tf 10 20 td(on) 3 6 11 20 20 30 7 14 tr td(off) nC 1.4 td(on) tr 100 VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 10 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.1 25 IS = 4.4 A, VGS 0 V IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.82 1.2 V 13 20 ns 6 12 nC 8 5 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VB7322 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 25 VGS = 10 V thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 20 VGS = 3 V 15 10 3 TC = 25 °C 2 1 5 TC = 125 °C 0 0 0 0.5 1 1.5 2 0 1 0.5 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.032 600 0.028 450 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0.024 VGS = 4.5 V VGS = 10 V 0.020 3 Ciss 300 150 Coss Crss 0.016 0 0 5 10 15 20 25 0 6 ID - Drain Current (A) 12 On-Resistance vs. Drain Current and Gate Voltage 10 24 18 30 VDS - Drain-to-Source Voltage (V) Capacitance 1.7 ID = 5.5 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5.5 A VDS = 8 V 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge 8 10 1.5 VGS = 10 V, ID = 5.5 A 1.3 1.1 0.9 VGS = 4.5 V, ID = 5 A 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 VB7322 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.060 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 5.5 A TJ = 150 °C 1 TJ = 25 °C 0.045 TJ = 125 °C 0.030 TJ = 25 °C 0.015 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 2 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 10 1.8 8 1.6 ID = 250 μA 1.4 1.2 1.0 - 50 4 VSD - Source-to-Drain Voltage (V) Power (W) VGS(th) (V) 0.0 6 4 2 TA = 25 °C 0 - 25 0 25 50 75 100 125 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 10 s, 1 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 VB7322 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 9 ID - Drain Current (A) 7 5 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.0 3.0 2.5 0.8 Power (W) Power (W) 2.0 1.5 0.6 0.4 1.0 0.2 0.5 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 VB7322 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 VB7322 www.VBsemi.com TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R INCHES Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 7 Nom 服务热线：400-655-8788 7 VB7322 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) 0.119 (3.023) (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 VB7322 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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