TPBT4448-1006
Switching Diode
www.sot23.com.tw
Application information
Features and benefits
• High speed switching
IC
• Extremely small surface mounting type.
• High Speed.
BL
DFN1006-2L
Absolute Maximum Ratings (Tamb=25°C unless otherwise specified)
Symbol
Value
Unit
VRM
90
V
VR
80
V
IFM
225
mA
IO
100
mA
ISURGE
500
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
Symbol
Max
Unit
VF
1.2
V
IR
0.1
uA
CT
3
pF
Trr
4
nS
DC reverse voltage
Peak forward current
TE
Mean rectifying current
CH
Peak reverse voltage
PU
Parameter
Surge current (1s)
Electrical Characteristics (TA=25°C unless otherwise specified)
Characteristic
Forward voltage
(IF=100mA)
Reverse current
(VR=80V)
Capacitance between terminals
(VR=0.5V,f=1MHz)
Reverse recovery time
(VR=6V,IF=10mA,RL=100Ω)
1
1
TPBT4448-1006
Switching Diode
www.sot23.com.tw
Outline Drawing - DFN1006-2
h
A
DIMENSIONS
MILLIMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
0.45
0.50
0.55
0.018
0.020
0.022
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.45
0.50
0.55
0.018
0.020
0.022
c
0.12
0.15
0.18
0.005
0.006
0.007
D
0.95
1.00
1.05
0.037
0.039
0.041
SYM
h
-
b
E
-
L
c
A
Bottom View
0.65 BSC
E
0.55
0.026 BSC
0.60
0.65
0.022
0.024
0.026
BL
A1
e
IC
e
D
0.20
0.25
0.30
0.008
0.010
0.012
h
0.07
0.12
0.17
0.003
0.005
0.007
PU
L
Y3
Y2
TE
╋
CH
Land Pattern - DFN1006-2
SYM
MILLIMETERS
INCHES
X
0.60
0.024
Y1
0.50
0.020
Y2
0.30
0.012
Y3
0.80
0.032
Z
1.30
0.052
Y1
Z
╋
X
2
DIMENSIONS
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