TPBT4448-1006

TPBT4448-1006 Switching Diode www.sot23.com.tw Application information Features and benefits • High speed switching IC • Extremely small surface mounting type. • High Speed. BL DFN1006-2L Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Symbol Value Unit VRM 90 V VR 80 V IFM 225 mA IO 100 mA ISURGE 500 mA Junction temperature Tj 125 °C Storage temperature Tstg -40 to +125 °C Symbol Max Unit VF 1.2 V IR 0.1 uA CT 3 pF Trr 4 nS DC reverse voltage Peak forward current TE Mean rectifying current CH Peak reverse voltage PU Parameter Surge current (1s) Electrical Characteristics (TA=25°C unless otherwise specified) Characteristic Forward voltage (IF=100mA) Reverse current (VR=80V) Capacitance between terminals (VR=0.5V,f=1MHz) Reverse recovery time (VR=6V,IF=10mA,RL=100Ω) 1 1 TPBT4448-1006 Switching Diode www.sot23.com.tw Outline Drawing - DFN1006-2 h A DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.45 0.50 0.55 0.018 0.020 0.022 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.95 1.00 1.05 0.037 0.039 0.041 SYM h - b E - L c A Bottom View 0.65 BSC E 0.55 0.026 BSC 0.60 0.65 0.022 0.024 0.026 BL A1 e IC e D 0.20 0.25 0.30 0.008 0.010 0.012 h 0.07 0.12 0.17 0.003 0.005 0.007 PU L Y3 Y2 TE ╋ CH Land Pattern - DFN1006-2 SYM MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 Y1 Z ╋ X 2 DIMENSIONS