DOS4614E
Description:
This N+P Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
D1
D1
D2
D2
S1
G1
S2
G2
Features:
N-Channel:V DS=40V,ID= 8A,RDS(ON)
很抱歉,暂时无法提供与“DOS4614E”相匹配的价格&库存,您可以联系我们找货
免费人工找货