SWD4N80D

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-220F TO-251N TO-252 BVDSS : 800V TO-262N ID High ruggedness Low RDS(ON) (Typ 3.2Ω)@VGS=10V Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested Application:Adaptor, LED, Industrial Power : 4A RDS(ON) : 3.2Ω 1 2 1 3 2 1 3 2 1 3 2 2 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 3 Order Codes Item 1 2 3 4 Sales Type SW F 4N80D SW N 4N80D SW D 4N80D SW J 4N80D Marking SW4N80D SW4N80D SW4N80D SW4N80D Package TO-220F TO-251N TO-252 TO-262N Packaging TUBE TUBE REEL TUBE Absolute maximum ratings Value Symbol Parameter Unit TO-220F TO-251N TO-252 TO-262N VDSS Drain to source voltage Continuous drain current ID (@TC=25oC) Continuous drain current (@TC=100oC) (note 1) 800 V 4* A 2.5* A 16 A ± 30 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 128 mJ EAR Repetitive avalanche energy (note 1) 15 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation PD TSTG, TJ TL (@TC=25oC) Derating factor above 25oC 22 96 156.3 W 0.18 0.77 1.25 W/oC Operating junction temperature & storage temperature -55 ~ + 150 oC 300 oC Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Value Parameter TO-220F TO-251N Rthjc Thermal resistance, Junction to case 5.6 Rthja Thermal resistance, Junction to ambient 50 Copyright@ Semipower Technology Co., Ltd. All rights reserved. 1.3 87 Unit TO-252 TO-262N 0.8 oC/W 68.7 oC/W May.2022. Rev. 7.0 1/7 SW4N80D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 800 V V/oC 0.75 VDS=800V, VGS=0V 1 uA VDS=640V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 3.8 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=2A 3.2 Forward transconductance VDS=30V, ID=2A 4 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Qg Rising time Turn off delay time 679 VGS=0V, VDS=25V, f=1MHz 55 pF 9.5 17 VDS=400V, ID=4A, RG=25Ω, VGS=10V (note 4,5) 29 ns 52 Fall time 29 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 19 VDS=640V, VGS=10V, ID=4A (note 4,5) 4 nC 9 VDS=0V, Scan F mode Ω 3.6 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 4 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 16 A Diode forward voltage drop. IS=4A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=4A, VGS=0V, dIF/dt=100A/us 488 ns 2.6 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =41mH, IAS =2.5A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 7.0 2/7 SW4N80D Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 2. Transfer Characteristics Fig. 4. On-state current vs. diode forward voltage Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 7.0 3/7 SW4N80D Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area(TO-220F) Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area (TO-251N/TO-252) Fig. 11. Maximum safe operating area(TO-262N) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 7.0 4/7 SW4N80D Fig. 12. Transient thermal response curve(TO-220F) Fig. 13. Transient thermal response curve(TO-251N/TO-252) Fig. 14. Transient thermal response curve(TO-262N) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 7.0 5/7 SW4N80D Fig. 15. Gate charge test circuit & waveform Fig. 16. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD 10VIN DUT 10% 10% VIN td(on) tr tON td(off) tf tOFF Fig. 17. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 7.0 6/7 SW4N80D Fig. 18. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 7.0 7/7