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NSI8261S1-DSSR

NSI8261S1-DSSR

  • 厂商:

    NOVOSENSE(纳芯微)

  • 封装:

    SSOP16_150MIL

  • 描述:

    数字隔离器 3KVrms 6通道 150Mbps 200kV/us SSOP16_150MIL

  • 数据手册
  • 价格&库存
NSI8261S1-DSSR 数据手册
NSi826x High Reliability Reinforced Six-Channel Digital Isolators Datasheet (EN) 1.5 Product Overview Safety Regulatory Approvals The NSi826x devices are high reliability six-channel digital isolators. The NSi826x device is safety certified by UL1577 support several insulation withstand voltage(3kV,5kV), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi826x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. The NSi826x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi826x device supports to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use.  UL recognition: up to 5000Vrms for 1 minute per UL1577 Key Features  Up to 5000Vrms Insulation voltage  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation Device Information NSi826x-DSWR NSi826x-DSSR SOP16(300mil) SSOP16 10.30mm × 7.50mm 4.90mm × 3.90mm  Date rate: DC to 150Mbps  Power supply voltage: 2.5V to 5.5V  High CMTI: 200kV/us Functional Block Diagrams  Chip level ESD: HBM: ±8kV  High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity  Default output high level or low level option  Low power consumption: 1.5mA/ch (1 Mbps)  Low propagation delay: 600 Comparative Tracking Index DIN EN 60112 (VDE 0303-11) Material Group IEC 60112 um V I Installation Classification per DIN VDE 0110 For Rated 150Vrms Mains Voltage ≤ I to III I to IV For Rated 300Vrms Mains Voltage ≤ I to II I to IV For Rated 600Vrms Mains Voltage ≤ I I to IV For Rated 1000Vrms Mains Voltage ≤ / I to III Insulation Specification per DIN VDE V 0884-11:2017-011) Climatic Category 40/125/21 Pollution Degree Maximum Voltage Working Maximum Voltage Repetitive per DIN VDE 0110, Table 1 Isolation AC voltage 2 VIOWM 400 1500 VRMS 565 2121 VDC VIORM 565 2121 Vpeak Vpd (m) 847 / Vpeak Vpd (m) / 3977 Vpeak DC voltage Isolation Input to Output Test Voltage, Method B1 Vini. b = VIOTM, Vpd(m) = VIORM × 1.5, tini = tm = 1 sec, qpd ≤ 5 pC, 100% production test Vini. b = VIOTM, Vpd(m) = VIORM × 1.875, tini = tm =1 sec, qpd≤ 5 pC, 100% production test Copyright © 2022, NOVOSENSE Page 15 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 Description Test Condition Symbol Value Unit Input to Output Test Voltage, Method A. After Environmental Tests Subgroup 1 Vini. a = VIOTM, Vpd(m) = VIORM × 1.3, V pd (m) 678 / Vpeak V pd (m) / 3394 Vpeak V pd (m) 678 2545 Vpeak tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC Vini. a = VIOTM, Vpd(m) = VIORM × 1.6, tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC Input to Output Test Voltage, Method A. After Input and Output Safety Test Subgroup 2 and Subgroup 3 Vini. a = VIOTM, Vpd(m) = VIORM × 1.2, Maximum Voltage t = 60 sec VIOTM 5000 8000 Vpeak Test method per IEC62368-1, VIOSM 5384 / Vpeak / 6250 Vpeak Transient Isolation Maximum Surge Isolation Voltage tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC 1.2/50us waveform, VTEST = 1.3 × VIOSM Test method per IEC62368-1, 1.2/50us waveform, VTEST = 1.6 × VIOSM Isolation Resistance VIO = 500 V, Tamb = TS RIO VIO = 500 V, 100 °C ≤ Tamb ≤ 125 °C Isolation Capacitance f = 1MHz CIO VTEST = 1.2 × VISO, t = 1 sec, VISO >109 Ω >1011 Ω 1.2 pF Insulation Specification per UL1577 Withstand Isolation Voltage 3000 5000 Vrms 100% production test 1) This coupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Safety-Limiting Values Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi826x-DSWR Description Test Condition Value Unit Safety Supply Power RθJA = 60.3 °C/W, TJ = 150 °C, TA = 25 °C 2073 mW Safety Supply Current RθJA = 60.3 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C 414 mA 150 °C Safety Temperature2) Copyright © 2022, NOVOSENSE Page 16 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 1) Calculate with the junction-to-air thermal resistance, RθJA, of SOP16(300mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (T J) specified for the device. Figure 6.1 NSi826x-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Basic isolation safety-limiting values as outlined in VDE-0884-11 of NSi826x-DSSR Description Test Condition Value Unit Safety Supply Power RθJA =86.5 °C/W, TJ = 150 °C, TA = 25 °C 1445 mW Safety Supply Current RθJA = 86.5 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C 289 mA 150 °C Safety Temperature2) Calculate with the junction-to-air thermal resistance, RθJA, of SSOP16 package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. 1600 700 1400 1200 1000 800 600 Safety Limiting Current per Channel (mA) Safety Limiting Power (mW) 1) 600 5V 500 3.3V 400 2.5V 300 400 200 200 100 0 0 50 100 150 Ambient Temperature (°C) 200 0 0 50 100 150 200 Ambient Temperature (°C) Figure 6.2 NSi826x-DSSR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2022, NOVOSENSE Page 17 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 Regulatory Information The NSi826xW-DSWR are approved or pending approval by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 5000Vrms Isolation voltage File (UL-US-L500602-1161808102-1) VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforce Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation File (50245794880-0002 / 276211) File (CQC20001264939) File (UL-US-L500602-1161808102-1) GB4943.1-2011 The NSi826xS-DSSR are approved or pending approval by the organizations listed in table. CUL UL 1577 Component Recognition Program Single Protection, 3000Vrms Isolation voltage File (UL-US-L500602-1161808102-1) Copyright © 2022, NOVOSENSE VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-01 Certified by CQC11471543-2012 Single Protection, 3000Vrms Isolation voltage Basic Insulation 565Vpeak, VIOSM=5384Vpeak Basic insulation File (UL-US-L500602-1161808102-1) File (5024579-48800001 / 283544) File (CQC19001233128) GB4943.1-2011 Page 18 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 7. Function Description Overview The NSi826x is a Six-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and demodulated at the Receiver side. The NSi826x devices are high reliability six-channel digital isolator. The NSi826x device is safety certified by UL1577 support 5kVrms insulation withstand voltages, while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi826x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. The NSi826x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi826x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. The NSi826x has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 7.1, which helps for diagnosis when power is missing at the transmitter side. The output B follows the same status with the input A after powering up. Table 7.1 Output status vs. power status Input VDD1 status VDD2 status Output Comment H Ready Ready H Normal operation. L Ready Ready L X Unready Ready L(NSi826xW 0) The output follows the same status with the input after input side VDD is powered on. H(NSi826xW 1) X Ready Unready X The output follows the same status with the input after output side VDD2 is powered on. Note: H=Logic high; L=Logic low; X=Logic low or logic high VDD1 is input side power; VDD2 is out side power. Copyright © 2022, NOVOSENSE Page 19 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 OOK Modulation NSi8266 is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal oscillator at the transmitter side, as shown in Figure 7.1 to Figure 7.2, then it is transferred through the capacitive isolation barrier and demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI. Figure 7.1 Single Channel Function Block Diagram Figure 7.2 OOK Modulation Copyright © 2022, NOVOSENSE Page 20 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 8. Application Note Typical Application Circuit Figure 8.1 Typical PWM isolation circuit for IPM PCB Layout The NSi826x requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the package. Figure 8.1 to Figure 8.2 show the recommended PCB layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up immunity. The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. Figure 8.1 Recommended PCB Layout — Top Layer Copyright © 2022, NOVOSENSE Figure 8.2 Recommended PCB Layout — Bottom Layer Page 21 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 High Speed Performance Typical Supply Current Equations The typical supply current of NSi826x can be calculated using below equations. I DD1 and IDD2 are typical supply currents measured in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF NSi8260: IDD1 = 0.19 *a1+1.45*b1+0.82*c1. IDD2 = 1.36+ VDD1*f* CL *c1*10-9 When a1 is the channel number of low input at side 1, b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1. NSi8261: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. NSi8262: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. NSi8263: IDD1 = 0.87 +1.26*b1+0.63*c1+ VDD1*f* CL *c2*10-9 IDD2 = 0.87 +1.26*b2+0.63*c2+ VDD1*f* CL *c1*10-9 When b1 is the channel number of high input at side 1, c1 is the channel number of switch signal input at side 1, b2 is the channel number of high input at side 2, c2 is the channel number of switch signal input at side 2. Copyright © 2022, NOVOSENSE Page 22 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 9. Package Information Figure 9.1 SOP16(300mil)/SOW16 Package Shape and Dimension in millimeters Figure 9.2 SOP16(300mil)/SOW16 Package Board Layout Example Copyright © 2022, NOVOSENSE Page 23 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 Figure 9.3 SSOP16 Package Shape and Dimension in millimeters Figure 9.4 SSOP16 Package Board Layout Example Copyright © 2022, NOVOSENSE Page 24 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 10. Order Information Part Number Isolation Rating (kV) Number of side 1 inputs Number of side 2 inputs Max Data Rate (Mbps ) 150 NSi8260W 5 6 0 0-DSWR NSi8260W 5 6 0 150 1-DSWR NSi8261W 5 5 1 150 0-DSWR NSi8261W 5 5 1 150 1-DSWR NSi8262W 5 4 2 150 0-DSWR NSi8262W 5 4 2 150 1-DSWR NSi8263W 5 3 3 150 0-DSWR NSi8263W 5 3 3 150 1-DSWR NSi8260S 3 6 0 150 0-DSSR NSi8260S 3 6 0 150 1-DSSR NSi8261S 3 5 1 150 0-DSSR NSi8261S 3 5 1 150 1-DSSR NSi8262S 3 4 2 150 0-DSSR NSi8262S 3 4 2 150 1-DSSR NSi8263S 3 3 3 150 0-DSSR NSi8263S 3 3 3 150 1-DSSR NOTE: All packages are RoHS-compliant with peak reflow classifications and peak solder temperatures. Copyright © 2022, NOVOSENSE Default Output State Temperature MSL Package Type Package Drawing SPQ Low -55 to 125℃ 2 SOW16 1000 High -55 to 125℃ 2 SOW16 1000 Low -55 to 125℃ 2 SOW16 1000 High -55 to 125℃ 2 SOW16 1000 Low -55 to 125℃ 2 SOW16 1000 High -55 to 125℃ 2 SOW16 1000 Low -55 to 125℃ 2 SOW16 1000 High -55 to 125℃ 2 SOW16 1000 Low -55 to 125℃ 1 SOP16 (300mil) SOP16 (300mil) SOP16 (300mil) SOP16 (300mil) SOP16 (300mil) SOP16 (300mil) SOP16 (300mil) SOP16 (300mil) SSOP16 SSOP16 2500 High -55 to 125℃ 1 SSOP16 SSOP16 2500 Low -55 to 125℃ 1 SSOP16 SSOP16 2500 High -55 to 125℃ 1 SSOP16 SSOP16 2500 Low -55 to 125℃ 1 SSOP16 SSOP16 2500 High -55 to 125℃ 1 SSOP16 SSOP16 2500 Low -55 to 125℃ 1 SSOP16 SSOP16 2500 High -55 to 125℃ 1 SSOP16 SSOP16 2500 temperatures of 260 °C according to the JEDEC industry standard Page 25 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 Part Number Rule: 11. Documentation Support Part Number Product Folder Datasheet NSi826x tbd tbd Copyright © 2022, NOVOSENSE Technical Documents tbd Isolator selection guide tbd Page 26 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 12. Tape and Reel Information Figure 12.1 Reel Information (for all packages) Copyright © 2022, NOVOSENSE Page 27 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 Figure 12.2 Tape Information of SOP16(300mil) Copyright © 2022, NOVOSENSE Page 28 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 Figure 12.3 Tape Information of SSOP16 Copyright © 2022, NOVOSENSE Page 29 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 13. Revision history Revision 1.0 1.1 1.2 1.3 1.4 1.5 Description Initial version Changed tape and reel information Updated Safety Regulatory Updated Safety-Limiting Values. Update SSOP16 Package Shape and Dimension in millimeters. Changed AEC-Q100 description. Update SOW16\SSOP16 Package Board Layout Example Update SSOP16 CTI and VDE file. Copyright © 2022, NOVOSENSE Date 2020/11/13 2020/12/20 2021/6/28 2022/4/25 2022/6/6 2023/1/12 Page 30 NSi8260/NSi8261/NSi8262/NSi8263 Datasheet (EN) 1.5 IMPORTANT NOTICE The information given in this document shall in no event be regarded as any warranty or authorization of, express or implied, including but not limited to accuracy, completeness, merchantability, fitness for a particular purpose or infringement of any third party’s intellectual property rights. You are solely responsible for your use of Novosense’ products and applications, and for the safety thereof. You shall comply with all laws, regulations and requirements related to Novosense’s products and applications, although information or support related to any application may still be provided by Novosense. The resources are intended only for skilled developers designing with Novosense’ products. Novosense reserves the rights to make corrections, modifications, enhancements, improvements or other changes to the products and services provided. Novosense authorizes you to use these resources exclusively for the development of relevant applications designed to integrate Novosense’s products. Using these resources for any other purpose, or any unauthorized reproduction or display of these resources is strictly prohibited. Novosense shall not be liable for any claims, damages, costs, losses or liabilities arising out of the use of these resources. For further information on applications, products and technologies, please contact Novosense (www.novosns.com ). Suzhou Novosense Microelectronics Co., Ltd Copyright © 2022, NOVOSENSE Page 31
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